Philips bc846bpn Datasheet

BC846BPN

65 V, 100 mA NPN/PNP general-purpose transistor

Rev. 01 — 17 July 2009 Product data sheet

1. Product profile

1.1 General description

NPN/PNP general-purpose transistor pair in a very small Surface-Mounted Device (SMD)
plastic package.

Table 1. Product overview

Type number Package NPN/NPN

BC846BPN SOT363 SC-88 BC846BS BC856BS

1.2 Features

n Low collector capacitance
n Low collector-emitter saturation voltage
n Closely matched current gain
n Reduces number of components and board space
n No mutual interference between the transistors
n AEC-Q101 qualified

NXP JEITA

complement

PNP/PNP
complement

1.3 Applications

n General-purpose switching and amplification

1.4 Quick reference data

Table 2. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

Per transistor; for the PNP transistor with negative polarity

V

CEO

I

C

TR1 (NPN)

h

FE

TR2 (PNP)

h

FE

collector-emitter voltage open base - - 65 V
collector current - - 100 mA

DC current gain VCE=5V; IC= 2 mA 200 300 450

DC current gain VCE= −5V;

I

= −2mA

C

200 290 450

NXP Semiconductors

2. Pinning information

Table 3. Pinning

Pin Description Simplified outline Graphic symbol

1 emitter TR1
2 base TR1
3 collector TR2
4 emitter TR2
5 base TR2
6 collector TR1

3. Ordering information

Table 4. Ordering information

Type number Package

BC846BPN SC-88 plastic surface-mounted package; 6 leads SOT363

BC846BPN

65 V, 100 mA NPN/PNP general-purpose transistor

6

5

2

sym019

4

TR2

3

56

4

TR1

132

1

Name Description Version

4. Marking

Table 5. Marking codes

Type number Marking code

BC846BPN PJ*

[1] * = -: made in Hong Kong

* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China

[1]

BC846BPN_1 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 01 — 17 July 2009 2 of 15

NXP Semiconductors

5. Limiting values

Table 6. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

Per transistor; for the PNP transistor with negative polarity

V

CBO

V

CEO

V

EBO

I

C

I

CM

I

BM

P

tot

Per device

P

tot

T

j

T

amb

T

stg

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

BC846BPN

65 V, 100 mA NPN/PNP general-purpose transistor

collector-base voltage open emitter - 80 V
collector-emitter voltage open base - 65 V
emitter-base voltage open collector - 6 V
collector current - 100 mA
peak collector current single pulse;

t

≤ 1ms

p

peak base current single pulse;

t

≤ 1ms

p

total power dissipation T

total power dissipation T

amb

amb

≤ 25 °C

≤ 25 °C

junction temperature - 150 °C
ambient temperature −55 +150 °C
storage temperature −65 +150 °C

- 200 mA

- 200 mA

[1]

- 200 mW

[1]

- 300 mW

500

P

tot

(mW)

400

300

200

100

0

−75 17512525 75−25

FR4 PCB, standard footprint

Fig 1. Per device: Power derating curve SOT363 (SC-88)

006aab618

T

(°C)

amb

BC846BPN_1 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 01 — 17 July 2009 3 of 15

NXP Semiconductors

6. Thermal characteristics

Table 7. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Per transistor

R

th(j-a)

R

th(j-sp)

Per device

R

th(j-a)

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

thermal resistance from
junction to ambient

thermal resistance from
junction to solder point

thermal resistance from
junction to ambient

BC846BPN

65 V, 100 mA NPN/PNP general-purpose transistor

in free air

in free air

[1]

- - 625 K/W

- - 230 K/W

[1]

- - 416 K/W

006aab619

2

10

tp (s)

3

10

Z

th(j-a)

(K/W)

3

10

δ = 1

0.75

0.50

0.20

0.05

0.01
0

0.33

0.10

0.02

−4

10

−3

10

−2

−1

10

1

1010

2

10

10

1

−5

10

FR4 PCB, standard footprint

Fig 2. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;

typical values

BC846BPN_1 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 01 — 17 July 2009 4 of 15

NXP Semiconductors

7. Characteristics

Table 8. Characteristics

T

amb

Symbol Parameter Conditions Min Typ Max Unit

TR1 (NPN)

I

CBO

I

EBO

h

FE

V

CEsat

V

BEsat

V

BE

C

c

C

e

f

T

NF noise figure V

TR2 (PNP)

I

CBO

I

EBO

h

FE

V

CEsat

65 V, 100 mA NPN/PNP general-purpose transistor

=25°C unless otherwise specified.

collector-basecut-off
current

emitter-base cut-off
current

DC current gain VCE=5V

collector-emitter
saturation voltage

base-emitter
saturation voltage

base-emitter voltage VCE=5V

collector capacitance VCB=10V; IE=ie=0A;

emitter capacitance VEB= 0.5 V; IC=ic=0A;

transition frequency VCE=5V; IC=10mA;

collector-basecut-off
current

emitter-base cut-off
current

DC current gain VCE= −5V

collector-emitter
saturation voltage

VCB=50V; IE=0A --15nA

=30V; IE=0A;

V

CB

T

= 150 °C

j

VEB=6V; IC= 0 A - - 100 nA

=10µA - 280 -

I

C

= 2 mA 200 300 450

I

C

IC= 10 mA; IB= 0.5 mA - 55 100 mV

= 100 mA; IB= 5 mA - 200 300 mV

I

C

IC= 10 mA; IB= 0.5 mA - 755 850 mV

= 100 mA; IB= 5 mA - 1000 - mV

I

C

= 2 mA 580 650 700 mV

I

C

= 10 mA - - 770 mV

I

C

f=1MHz

f=1MHz

f = 100 MHz

=5V; IC= 0.2 mA;

CE

R

=2kΩ;

S

f = 10 Hz to 15.7 kHz

=5V; IC= 0.2 mA;

V

CE

R

=2kΩ; f = 1 kHz;

S

B = 200 Hz

VCB= −50 V; IE=0A - - −15 nA

= −30 V; IE=0A;

V

CB

T

= 150 °C

j

VEB= −6 V; IC=0A - - −100 nA

= −10 µA - 270 -

I

C

= −2 mA 200 290 450

I

C

IC= −10 mA;
I

= −0.5 mA

B

= −100 mA; IB= −5mA - −200 −300 mV

I

C

BC846BPN

--5µA

- 1.9 - pF

-11-pF

100 - - MHz

- 1.9 - dB

- 3.1 - dB

--−5 µA

- −55 −100 mV

BC846BPN_1 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 01 — 17 July 2009 5 of 15

NXP Semiconductors

BC846BPN

65 V, 100 mA NPN/PNP general-purpose transistor

Table 8. Characteristics

T

=25°C unless otherwise specified.

amb

…continued

Symbol Parameter Conditions Min Typ Max Unit

V

V

C

BEsat

BE

c

base-emitter
saturation voltage

IC= −10 mA;
I

= −0.5 mA

B

= −100 mA; IB= −5mA - −900 - mV

I

C

base-emitter voltage VCE= −5V

= −2mA −600 −650 −750 mV

I

C

= −10 mA - - −820 mV

I

C

collector capacitance VCB= −10 V;IE=ie=0A;

- −755 −850 mV

- 2.3 - pF

f=1MHz

C

e

f

T

emitter capacitance VEB= −0.5 V;

I

= 0 A; f = 1 MHz

C=ic

transition frequency VCE= −5 V; IC= −10 mA;

-10-pF

100 - - MHz

f = 100 MHz

NF noise figure V

= −5V;IC= −0.2 mA;

CE

R

=2kΩ;

S

- 1.6 - dB

f = 10 Hz to 15.7 kHz

= −5V;IC= −0.2 mA;

V

CE

R

=2kΩ; f = 1 kHz;

S

- 2.9 - dB

B = 200 Hz

600

h

FE

400

200

0

−2

10

(1)

(2)

(3)

−1

10

101

006aaa533

2

10

I

C

(mA)

3

10

VCE=5V
(1) T
(2) T
(3) T

amb
amb
amb

= 100 °C
=25°C
= −55 °C

Fig 3. TR1 (NPN): DC current gain as a function of

collector current; typical values

2.70

2.25

1.80

1.35

0.90

0.45

006aaa532

VCE (V)

I

(A)

0.20

C

0.16

0.12

0.08

0.04

0

IB (mA) = 4.50

4.05

3.60

3.15

0108462

T

=25°C

amb

Fig 4. TR1 (NPN): Collector current as a function of

collector-emitter voltage; typical values

BC846BPN_1 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 01 — 17 July 2009 6 of 15

NXP Semiconductors

BC846BPN

65 V, 100 mA NPN/PNP general-purpose transistor

10

006aaa536

2

I

(mA)

C

3

10

V

(V)

BE

0.8

0.6

0.4

1

10

−1

VCE=5V; T

110

=25°CI

amb

Fig 5. TR1 (NPN): Base-emitter voltage as a function

of collector current; typical values

10

006aaa535

10

006aaa534

2

IC (mA)

3

10

V

BEsat

1.3

(V)

1.1

0.9

0.7

0.5

0.3

0.1

(1) T
(2) T
(3) T

(1)

(2)

(3)

−1

10

C/IB

amb
amb
amb

110

=20

= −55 °C
=25°C
= 100 °C

Fig 6. TR1 (NPN): Base-emitter saturation voltage as

a function of collector current; typical values

3

10

006aaa537

V

CEsat

(V)

1

−1

10

−2

10

−1

10

(1)

(2)
(3)

110

10

2

IC (mA)

10

IC/IB=20
(1) T
(2) T
(3) T

amb
amb
amb

= 100 °C
=25°C
= −55 °C

Fig 7. TR1 (NPN): Collector-emitter saturation

voltage as a function of collector current;

typical values

f

T

(MHz)

2

10

3

10

110

VCE=5V; T

amb

=25°C

10

IC (mA)

2

Fig 8. TR1 (NPN): Transition frequency as a function

of collector current; typical values

BC846BPN_1 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 01 — 17 July 2009 7 of 15

NXP Semiconductors

BC846BPN

65 V, 100 mA NPN/PNP general-purpose transistor

006aab620

VCB (V)

C

(pF)

6

c

4

2

0

0108462

f = 1 MHz; T

=25°C f = 1 MHz; T

amb

Fig 9. TR1 (NPN): Collector capacitance as a

function of collector-base voltage; typical

values

600

h

FE

(1)

400

(2)

200

(3)

006aaa541

15

C

e

(pF)

13

11

9

7

5

0642

amb

=25°C

006aaa539

VEB (V)

Fig 10. TR1 (NPN): Emitter capacitance as a function

of emitter-base voltage; typical values

−0.20
I

C

(A)

−0.16

−0.12

−0.08

−0.04

IB (mA) = −2.5

−2.25

−2.0

−1.75

−1.5

−1.25

−1.0

−0.75

−0.5

006aaa540

−0.25

0

−10

−2

−10

−1

−10−1

−10

2

I

(mA)

C

−10

3

VCE= −5V
(1) T
(2) T
(3) T

Fig 11. TR2 (PNP): DC current gain as a function of

amb
amb
amb

= 100 °C
=25°C
= −55 °C

Fig 12. TR2 (PNP): Collector current as a function of

collector current; typical values

BC846BPN_1 © NXP B.V. 2009. All rights reserved.

0

0 −10−8−4 −6−2

T

=25°C

amb

VCE (V)

collector-emitter voltage; typical values

Product data sheet Rev. 01 — 17 July 2009 8 of 15

NXP Semiconductors

BC846BPN

65 V, 100 mA NPN/PNP general-purpose transistor

−10

006aaa544

2

I

(mA)

C

−10

3

V

(V)

BE

−0.8

−0.6

−0.4

−1

−10

−1

−1 −10

VCE= −5 V; T

=25°CI

amb

Fig 13. TR2 (PNP): Base-emitter voltage as a function

of collector current; typical values

−10

006aaa543

−10

006aaa542

2

IC (mA)

−10

3

V

BEsat

−1.3

(V)

−1.1

−0.9

−0.7

−0.5

−0.3

−0.1

(1) T
(2) T
(3) T

−10

−1

C/IB

amb
amb
amb

(1)

(2)

(3)

−1 −10

=20

= −55 °C
=25°C
= 100 °C

Fig 14. TR2 (PNP): Base-emitter saturation voltage as

a function of collector current; typical values

3

10

006aaa545

V

CEsat

(V)

−1

−10

−10

−1

−2

−10

−1

(1)
(2)
(3)

−1 −10

−10

2

IC (mA)

−10

IC/IB=20
(1) T
(2) T
(3) T

amb
amb
amb

= 100 °C
=25°C
= −55 °C

Fig 15. TR2 (PNP): Collector-emitter saturation

voltage as a function of collector current;

typical values

f

T

(MHz)

2

10

3

10

−1 −10

VCE= −5 V; T

amb

−10

=25°C

IC (mA)

2

Fig 16. TR2 (PNP): Transition frequency as a function

of collector current; typical values

BC846BPN_1 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 01 — 17 July 2009 9 of 15

NXP Semiconductors

BC846BPN

65 V, 100 mA NPN/PNP general-purpose transistor

006aab623

VCB (V)

C

(pF)

10

c

8

6

4

2

0

0 −10−8−4 −6−2

f = 1 MHz; T

=25°C f = 1 MHz; T

amb

Fig 17. TR2 (PNP): Collector capacitance as afunction

of collector-base voltage; typical values

15

C

e

(pF)

13

11

9

7

5

0 −6−4−2

amb

=25°C

006aaa547

VEB (V)

Fig 18. TR2 (PNP): Emitter capacitance as a function

of emitter-base voltage; typical values

BC846BPN_1 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 01 — 17 July 2009 10 of 15

NXP Semiconductors

8. Test information

8.1 Quality information

This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard
suitable for use in automotive applications.

9. Package outline

BC846BPN

65 V, 100 mA NPN/PNP general-purpose transistor

Q101 - Stress test qualification for discrete semiconductors

, and is

Fig 19. Package outline SOT363 (SC-88)

10. Packing information

Table 9. Packing methods

The indicated -xxx are the last three digits of the 12NC ordering code.

Type number Package Description Packing quantity

BC846BPN SOT363 4 mm pitch, 8 mm tape and reel; T1

2.2

1.8

2.2

1.35

2.0

1.15

pin 1
index

132

0.65

1.3

4 mm pitch, 8 mm tape and reel; T2

1.1

0.8

0.45

465

0.15

0.3

0.2

0.25

0.10

06-03-16Dimensions in mm

[1]

3000 10000

[2]

-115 -135

[3]

-125 -165

[1] For further information and the availability of packing methods, seeSection 14.
[2] T1: normal taping
[3] T2: reverse taping

BC846BPN_1 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 01 — 17 July 2009 11 of 15

NXP Semiconductors

11. Soldering

2.35

1.5

0.6

(4×)

0.5

(4×)

BC846BPN

65 V, 100 mA NPN/PNP general-purpose transistor

2.65

solder lands

0.4 (2×)
solder resist

solder paste

0.5

(4×)

0.6

(4×)

0.6

(2×)

1.8

Fig 20. Reflow soldering footprint SOT363 (SC-88)

1.5

4.5

1.5

1.3 1.3

2.45

5.3

Fig 21. Wave soldering footprint SOT363 (SC-88)

0.3

occupied area

Dimensions in mm

sot363_fr

solder lands

2.5
solder resist

occupied area

Dimensions in mm

preferred transport

direction during soldering

sot363_fw

BC846BPN_1 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 01 — 17 July 2009 12 of 15

NXP Semiconductors

65 V, 100 mA NPN/PNP general-purpose transistor

BC846BPN

12. Revision history

Table 10. Revision history

Document ID Release date Data sheet status Change notice Supersedes

BC846BPN_1 20090717 Product data sheet - -

BC846BPN_1 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 01 — 17 July 2009 13 of 15

NXP Semiconductors

13. Legal information

13.1 Data sheet status

BC846BPN

65 V, 100 mA NPN/PNP general-purpose transistor

Document status

Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.

[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may havechanged since this document was published and may differ in case of multiple devices. The latest product status

information is available on the Internet at URL

[1][2]

Product status

13.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included hereinandshall have no liability forthe consequences of
use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet
with the same producttype number(s) and title. A short data sheet is intended
for quick referenceonly and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.

13.3 Disclaimers

General — Information in this document is believed to be accurate and

reliable. However,NXP Semiconductors does not giveany representations or
warranties, expressedor implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.

Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.

Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental

[3]

http://www.nxp.com.

Definition

damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.

Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device.Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.

Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at

http://www.nxp.com/profile/terms, including those pertaining to warranty,

intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.

No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyanceor implication of any license under any copyrights, patents
or other industrial or intellectual property rights.

Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.

Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.

13.4 Trademarks

Notice: All referencedbrands, product names,service names andtrademarks
are the property of their respective owners.

14. Contact information

For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]

BC846BPN_1 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 01 — 17 July 2009 14 of 15

NXP Semiconductors

15. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3

6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5

8 Test information. . . . . . . . . . . . . . . . . . . . . . . . 11

8.1 Quality information . . . . . . . . . . . . . . . . . . . . . 11

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11

10 Packing information. . . . . . . . . . . . . . . . . . . . . 11

11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 13

13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 14

13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14

13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 14

13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14

14 Contact information. . . . . . . . . . . . . . . . . . . . . 14

15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

BC846BPN

65 V, 100 mA NPN/PNP general-purpose transistor

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Date of release: 17 July 2009

Document identifier: BC846BPN_1