Page 1
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D186
BC635; BC637; BC639
NPN medium power transistors
Product specification
Supersedes data of 1999 Apr 23
2001 Oct 10
Page 2
Philips Semiconductors Product specification
NPN medium power transistors BC635; BC637; BC639
FEATURES
• High current (max. 1 A)
• Low voltage (max. 80 V).
PINNING
PIN DESCRIPTION
1 base
2 collector
APPLICATIONS
3 emitter
• Driver stages of audio/video amplifiers.
DESCRIPTION
handbook, halfpage
NPN transistor in a TO-92; SOT54 plastic package.
PNP complements: BC636, BC638 and BC640.
1
2
3
MAM259
2
1
3
Fig.1 Simplified outline (TO-92; SOT54)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter
BC635 − 45 V
BC637 − 60 V
BC639 − 100 V
V
CEO
collector-emitter voltage open base
BC635 − 45 V
BC637 − 60 V
BC639 − 80 V
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
emitter-base voltage open collector − 5V
collector current (DC) − 1A
peak collector current − 1.5 A
peak base current − 200 mA
total power dissipation T
≤ 25 °C − 0.83 W
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
2001 Oct 10 2
Page 3
Philips Semiconductors Product specification
NPN medium power transistors BC635; BC637; BC639
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
=25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BE
f
T
h
FE1
----------h
FE2
thermal resistance from junction to ambient note 1 150 K/W
collector cut-off current IE= 0; VCB=30V − 100 nA
I
= 0; VCB=30V; Tj= 150 °C − 10 µA
E
emitter cut-off current IC= 0; VEB=5V − 100 nA
DC current gain VCE= 2 V; see Fig.2
I
= 5 mA 63 −
C
I
= 150 mA 63 250
C
I
= 500 mA 40 −
C
DC current gain I
= 150 mA; VCE= 2 V; see Fig.2
C
BC639-10 63 160
BC635-16; BC637-16; BC639-16 100 250
collector-emitter saturation voltage IC= 500 mA; IB=50mA − 500 mV
base-emitter voltage IC= 500 mA; VCE=2V − 1V
transition frequency IC= 50 mA; VCE= 5 V; f = 100 MHz 100 − MHz
DC current gain ratio of the
I
= 150 mA; VCE =2V − 1.6
C
complementary pairs
2001 Oct 10 3
Page 4
Philips Semiconductors Product specification
NPN medium power transistors BC635; BC637; BC639
160
handbook, full pagewidth
h
FE
120
80
40
0
−1
10
VCE = 2 V
1
10 10
Fig.2 DC current gain; typical values.
MBH729
2
10
IC (mA)
3
2001 Oct 10 4
Page 5
Philips Semiconductors Product specification
NPN medium power transistors BC635; BC637; BC639
PACKAGE OUTLINE
Plastic single-ended leaded (through hole) package; 3 leads SOT54
c
E
d
A L
1
D
2
3
b
1
0 2.5 5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
A
5.2
mm
5.0
OUTLINE
VERSION
SOT54 TO-92 SC-43
b
0.48
0.40
b
c
D
d
1
0.66
0.45
0.40
4.8
4.4
0.56
IEC JEDEC EIAJ
E
1.7
4.2
1.4
3.6
REFERENCES
2.54
e
e
1
1.27
L
14.5
12.7
L
1
(1)
L
1
2.5
EUROPEAN
PROJECTION
b
e
1
e
ISSUE DATE
97-02-28
2001 Oct 10 5
Page 6
Philips Semiconductors Product specification
NPN medium power transistors BC635; BC637; BC639
DATA SHEET STATUS
PRODUCT
DATA SHEET STATUS
Objective data Development This data sheet contains data from the objective specification for product
Preliminary data Qualification This data sheet contains data from the preliminary specification.
Product data Production This data sheet contains data from the product specification. Philips
(1)
STATUS
(2)
DEFINITIONS
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DEFINITIONS
Short-form specification The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting valuesdefinition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
atthese or at anyotherconditions above those giveninthe
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationor warranty that such applications willbe
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expectedto result inpersonal injury. Philips
Semiconductorscustomersusingor selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
theuseof any of theseproducts,conveysno licence or title
under any patent, copyright, or mask work right to these
products,and makes no representationsorwarranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
2001 Oct 10 6
Page 7
Philips Semiconductors Product specification
NPN medium power transistors BC635; BC637; BC639
NOTES
2001 Oct 10 7
Page 8
Philips Semiconductors – a w orldwide compan y
Contact information
For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825
For sales offices addresses send e-mail to: [email protected].
© Koninklijke Philips Electronics N.V. 2001
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands 613514/04/pp8 Date of release: 2001 Oct 10 Document order number: 9397 750 08738
SCA73
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