Page 1
DATA SH EET
ook, halfpage
DISCRETE SEMICONDUCTORS
M3D186
BC556; BC557
PNP general purpose transistors
Product data sheet
Supersedes data of 1999 Apr 15
2004 Oct 11
Page 2
NXP Semiconductors Product data sheet
PNP general purpose transistors BC556; BC557
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 65 V).
PINNING
PIN DESCRIPTION
1 emitter
2 base
APPLICATIONS
3 collector
• General purpose switching and amplification.
DESCRIPTION
PNP transistor in a TO-92; SOT54 plastic package.
complements: BC546 and BC547.
NPN
handbook, halfpage
1
2
3
2
MAM281
Fig.1 Simplified outline (TO-92; SOT54)
and symbol.
ORDERING INFORMATION
PACKAGE
T YPE NUMBER
NAME DESCRIPTION VERSION
BC556 SC-43A plastic single-ended leaded (throug h hole) package; 3 leads SOT54
BC557
3
1
LIMITING VALUES
In accordance with the Absolu te Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter
BC556 − −80 V
BC557 − −50 V
V
CEO
collector-emitter voltage open base
BC556 − −65 V
BC557 − −45 V
V
I
I
I
P
T
T
T
EBO
C
CM
BM
tot
stg
j
amb
emitter-base voltage open collector − −5 V
collector current (DC) − −100 mA
peak collector current − −200 mA
peak base current − −200 mA
total power dissipation T
≤ 25 °C − 500 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
ambient temperature −65 +150 °C
2004 Oct 11 2
Page 3
NXP Semiconductors Product data sheet
PNP general purpose transistors BC556; BC557
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th(j-a)
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
= 25 °C unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
V
BE
C
c
C
e
f
T
F noise figure VCE = −5 V; IC = −200 μA; RS = 2 kΩ;
thermal resistance from junction to ambient note 1 250 K/W
collector-base cut-off curren t VCB = −30 V; IE = 0 A − −1 −15 nA
VCB = −30 V; IE = 0 A; Tj = 150 °C − − −4 μA
emitter-base cut-off current VEB = −5 V; IC = 0 V − − −100 nA
DC current gain IC = −2 mA; VCE = −5 V;
Figs 2, 3 and 4
BC556 125 − 475
see
BC557 125 − 800
BC556A 125 − 250
BC556B; BC557B 220 − 475
BC557C 420 − 800
collector-emitter saturation
voltage
IC = −10 mA; IB = −0.5 mA − −60 −300 mV
IC = −100 mA; IB = −5 mA − −180 −650 mV
base-emitter saturation vo ltage IC = −10 mA; IB = −0.5 mA; note 1 − −750 − mV
IC = −100 mA; IB = −5 mA; note 1 − −930 − mV
base-emitter voltage VCE = −5 V; IC = −2 mA; note 2 −600 −650 −750 mV
VCE = −5 V; IC = −10 mA; note 2 − − −820 mV
collector capacitance VCB = −10 V; IE = ie = 0 A; f = 1 MHz − 3 − pF
emitter capacitance VEB = −0.5 V; IC = ic = 0 A; f = 1 MHz − 10 − pF
transition frequency VCE = −5 V; IC = −10 mA; f = 100 MHz 100 − − MHz
− 2 10 dB
= 1 kHz; B = 200 Hz
f
Notes
1. V
decreases by about −1.7 mV/K with increasing temperature.
BEsat
2. VBE decreases by about −2 mV/K with increasing temperature.
2004 Oct 11 3
Page 4
NXP Semiconductors Product data sheet
PNP general purpose transistors BC556; BC557
300
handbook, full pagewidth
h
FE
200
100
0
−1
−10
BC556A.
−1
−10 −10
Fig.2 DC current gain; typical values.
VCE = −5 V
−10
MBH726
2
IC (mA)
3
400
handbook, full pagewidth
h
FE
300
200
100
0
−2
−10
BC556B; BC557B.
−10
MBH727
VCE = −5 V
−1
−1
−10 −10
−10
2
IC (mA)
3
Fig.3 DC current gain; typical values.
2004 Oct 11 4
Page 5
NXP Semiconductors Product data sheet
PNP general purpose transistors BC556; BC557
600
handbook, full pagewidth
h
FE
500
400
300
200
100
0
−2
−10
BC557C.
−10
MBH728
VCE = −5 V
−1
−1
−10 −10
−10
2
IC (mA)
3
Fig.4 DC current gain; typical values.
2004 Oct 11 5
Page 6
NXP Semiconductors Product data sheet
4
PNP general purpose transistors BC556; BC557
PACKAGE OUTLINE
Plastic single-ended leaded (through hole) package; 3 leads SOT5
c
E
d
A L
1
D
2
3
b
1
0 2.5 5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
5.2
mm
5.0
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
OUTLINE
VERSION
SOT54 TO-92 SC-43A
b
0.48
0.40
b
c
D
d
1
0.66
0.45
0.38
4.8
4.4
0.55
IEC JEDEC JEITA
E
1.7
4.2
1.4
3.6
REFERENCES
2.54
e
e
1
1.27
L
14.5
12.7
L
1
(1)
L
1
max.
2.5
EUROPEAN
PROJECTION
b
e
1
e
ISSUE DATE
04-06-28
04-11-16
2004 Oct 11 6
Page 7
NXP Semiconductors Product data sheet
PNP general purpose transistors BC556; BC557
DATA SHEET STATUS
DOCUMENT
STATUS
Objective data sheet Development This document contains data from the objective specification for product
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this do cument was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
http://www.nxp.com.
URL
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General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
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reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
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(1)
PRODUCT
STATUS
(2)
DEFINITION
development.
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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products are sold subject to the general terms and
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http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
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may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveya nce or
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Export control ⎯ This document as well as the item(s)
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Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modificati on .
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC
2004 Oct 11 7
60134) may cause permanent damage to
Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Page 8
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Contact information
For additional information please visit: http://www.nxp.com
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© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this documen t d oes not form part of any quotation or contract, is believe d to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industri al or intellectual property rights.
Printed in The Netherlands R75/04/pp8 Date of release: 2004 Oct 11 Document order number: 9397 750 13571
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