Philips bc549_bc550 Datasheet

DATA SH EET

ook, halfpage

DISCRETE SEMICONDUCTORS

M3D186

BC549; BC550

NPN general purpose transistors

Product data sheet
Supersedes data of 1999 Apr 22

2004 Oct 11

NXP Semiconductors Product data sheet

NPN general purpose transistors BC549; BC550

FEATURES

• Low current (max. 100 mA)

• Low voltage (max. 45 V).

PINNING

PIN DESCRIPTION

1 emitter
2 base

APPLICATIONS

3 collector

• Low noise stages in audio frequency equipment.

DESCRIPTION

NPN transistor in a TO-92; SOT54 plastic package.
PNP

complements: BC559 and BC560.

handbook, halfpage

1

2

3

2

MAM182

Fig.1 Simplified outline (TO-92; SOT54)

and symbol.

ORDERING INFORMATION

PACKAGE

TYPE NUMBER

NAME DESCRIPTION VERSION

BC549C SC-43A plastic single-ended leaded (through hole) package; 3 leads SOT54
BC550C

3

1

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

collector-base voltage open emitter

BC549 − 30 V
BC550 − 50 V

V

CEO

collector-emitter voltage open base

BC549 − 30 V

BC550 − 45 V
V
I
I
I
P
T
T
T

EBO
C
CM
BM

tot

stg

j

amb

emitter-base voltage open collector − 5 V
collector current (DC) − 100 mA
peak collector current − 200 mA
peak base current − 200 mA
total power dissipation T

≤ 25 °C; note 1 − 500 mW

amb

storage temperature −65 +150 °C
junction temperature − 150 °C
ambient temperature −65 +150 °C

Note

1. Transistor mounted on an FR4 printed-circuit board.

2004 Oct 11 2

NXP Semiconductors Product data sheet

NPN general purpose transistors BC549; BC550

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th(j-a)

Note

1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

T

= 25 °C unless otherwise specified.

amb

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

CBO

I

EBO

h

FE

V

CEsat

V

BEsat

V

BE

C

c

C

e

f

T

F noise figure VCE = 5 V; IC = 200 μA;

thermal resistance from junction to ambient note 1 250 K/W

collector-base cut-off current VCB = 30 V; IE = 0 A − − 15 nA

VCB = 30 V; IE = 0 A; Tj = 150 °C − − 5 μA
emitter-base cut-off current VEB = 5 V; IC = 0 A − − 100 nA
DC current gain VCE = 5 V; see Fig.2

IC = 10 μA − 270 −
IC = 2 mA 420 520 800

collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA − 90 250 mV

IC = 100 mA; IB = 5 mA − 200 600 mV
base-emitter saturation voltage IC = 10 mA; IB = 0.5 mA; note 1 − 700 − mV

IC = 100 mA; IB = 5 mA; note 1 − 900 − mV
base-emitter voltage VCE = 5 V; IC = 2 mA; note 2 580 660 700 mV

VCE = 5 V; IC = 10 mA; note 2 − − 770 mV
collector capacitance VCB = 10 V; IE = ie = 0 A;

− 1.5 − pF

f = 1 MHz
emitter capacitance VEB = 0.5 V; IC = ic = 0 A;

= 1 MHz

f
transition frequency VCE = 5 V; IC = 10 mA;

f

= 100 MHz

− 11 − pF

100 − − MHz

− − 4 dB

R

= 2 kΩ; f = 10 Hz to 15.7 kHz

S

VCE = 5 V; IC = 200 μA;

R

= 2 kΩ; f = 1 kHz; B = 200 Hz

S

− − 4 dB

Notes

1. V

decreases by about 1.7 mV/K with increasing temperature.

BEsat

2. VBE decreases by about 2 mV/K with increasing temperature.

2004 Oct 11 3

NXP Semiconductors Product data sheet

NPN general purpose transistors BC549; BC550

600

handbook, full pagewidth

h

FE

400

200

0

−2

10

BC549C; BC550C.

MBH725

VCE = 5 V

−1

10

1

10 10

2

10

IC (mA)

3

Fig.2 DC current gain; typical values.

2004 Oct 11 4

NXP Semiconductors Product data sheet

4

NPN general purpose transistors BC549; BC550

PACKAGE OUTLINE

Plastic single-ended leaded (through hole) package; 3 leads SOT5

c

E

d

A L

1

D

2

3

b

1

0 2.5 5 mm

scale

DIMENSIONS (mm are the original dimensions)

UNIT

A

5.2

mm

5.0

Note

1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.

OUTLINE
VERSION

SOT54 TO-92 SC-43A

b

0.48

0.40

b

c

D

d

1

0.66

0.45

0.38

4.8

4.4

0.55

IEC JEDEC JEITA

E

1.7

4.2

1.4

3.6

REFERENCES

2.54

e

e

1

1.27

L

14.5

12.7

L

1

(1)

L

1

max.

2.5

EUROPEAN

PROJECTION

b

e

1

e

ISSUE DATE

04-06-28
04-11-16

2004 Oct 11 5

NXP Semiconductors Product data sheet

NPN general purpose transistors BC549; BC550

DATA SHEET STATUS

DOCUMENT

STATUS

(1)

PRODUCT
STATUS

(2)

DEFINITION

Objective data sheet Development This document contains data from the objective specification for product

development.
Preliminary data sheet Qualification This document contains data from the preliminary spe c i fication.
Product data sheet Production This document contains the product specification.

Notes

1. Please consult the most recently issued document before initiating or completing a design.

2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.

DISCLAIMERS
General ⎯ Information in this document is believed to be

accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.

Right to make changes ⎯ NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.

Suitability for use ⎯ NXP Semiconductors products are
not designed, authorized or warranted to be suitable for
use in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
property or environmental damage. NXP Semicondu ctors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
the customer’s own risk.

Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or

operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.

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products are sold subject to the general terms and
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http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
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regulations. Export might require a prior authorization from
national authorities.

Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is

not complete, exhaustive or legally binding.
warranty that such applications will be suitable for the
specified use without further testing or modification.

Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and

2004 Oct 11 6

NXP Semiconductors

Customer notification

This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for p ackage outline
drawings which were updated to the latest version.

Contact information

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© NXP B.V. 2009
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The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
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Printed in The Netherlands R75/04/pp7 Date of release: 2004 Oct 11 Document order number: 9397 750 13569