Philips BB154 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
fpage
M3D049
BB154
UHF variable
capacitance diode
Preliminary specification
1999 May 12
Philips Semiconductors Preliminary specification
UHF variable capacitance diode BB154
FEATURES
• Excellent linearity
PINNING
PIN DESCRIPTION
• Excellent matching to 2% DMA
• Very small plastic SMD package
• C28: 2.0 pF; ratio: 9.7
• Very low series resistance.
columns
APPLICATIONS
• Electronic tuning in UHF television tuners
• Voltage controlled oscillators (VCO).
Marking code: PM.
DESCRIPTION
The BB154 is a variable capacitance diode, fabricated in
Cathode indicated by a marking bar.
Fig.1 Simplified outline (SOD323) and symbol.
planar technology, and encapsulated in the SOD323 very
small SMD package.
The excellent matching performance is achieved by gliding
matching and a direct matching assembly procedure.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
1 cathode
2 anode
ka
1 2
MAM130
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
R
V
RM
I
F
T
stg
T
j
continuous reverse voltage
peak reverse voltage in series with a 10 kΩ resistor
continuous forward current −
storage temperature
operating junction temperature
−
−
−55
−55
30 V
35 V
20 mA
+150 °C
+150 °C
ELECTRICAL CHARACTERISTICS
T
=25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
R
r
s
C
d
C
d1V()
-------------------C
d28V()
C
∆
d
---------C
d
reverse current VR= 30 V; see Fig.3 −−
=30V; Tj=85°C; see Fig.3 −−
V
R
10
200
diode series resistance f = 470 MHz; VR is the value at which Cd=9pF − 0.60 0.75 Ω
diode capacitance VR= 1 V; f = 1 MHz; see Figs 2 and 4 18.5 − 21.25
V
= 28 V; f = 1 MHz; see Figs 2 and 4 1.9 − 2.2 pF
R
capacitance ratio f = 1 MHz 9. 9.7 11
capacitance matching VR= 1 to 28 V; in a sequence of 15 diodes
−−2
(gliding)
nA
nA
pF
1999 May 12 2
Philips Semiconductors Preliminary specification
UHF variable capacitance diode BB154
GRAPHICAL DATA
30
handbook, full pagewidth
C
d
(pF)
20
10
0
−1
10
1 10
10
VR (V)
Fig.2 Diode capacitance as a function of reverse voltage; typical values.
MGS355
2
3
10
handbook, halfpage
I
R
(nA)
2
10
10
50
o
T ( C)
j
Fig.3 Reverse current as a function of junction
temperature; maximum values.
MLC816
−3
10
handbook, halfpage
TC
−1
(K
)
−4
10
−5
10
−1
1000
10
11010
reverse bias (V)
MGS356
2
Fig.4 Temperature coefficient of diode
capacitance as a function of
reverse voltage; typical values.
1999 May 12 3
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