Philips BB153 Datasheet
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M3D049
BB153
VHF variable capacitance diode
Product specification
1997 Dec 17
Philips Semiconductors Product specification
VHF variable capacitance diode BB153
FEATURES
• Excellent linearity
• Excellent matching to 2% DMA
• Very small plastic SMD package
• C28: 2.6 pF; ratio 15
• Very low series resistance.
DESCRIPTION
The BB153 is a planar technology
variable capacitance diode, in a
SOD323 very small plastic SMD
package. The excellent matching
performance is achieved by gliding
matching and a direct matching
handbook, 2 columns
12
MAM392
assembly procedure.
APPLICATIONS
• Electronic tuning in VHF television
tuners, band B up to 460 MHz
• Voltage controlled oscillators
(VCO).
PINNING
PIN DESCRIPTION
1 cathode
2 anode
Marking code: PC.
Cathode side indicated by a bar.
Fig.1 Simplified outline
(SOD323) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
R
V
Rp
I
F
T
stg
T
j
continuous reverse voltage
peak reverse voltage in series with a 10 kΩ resistor
continuous forward current −
storage temperature
operating junction temperature
−
−
−55
−55
32 V
35 V
20 mA
+150 °C
+125 °C
ELECTRICAL CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
R
r
s
C
d
C
d1V()
-----------------C
d2V()
C
d1V()
-------------------C
d28V()
C
d25V()
-------------------C
d28V()
∆
C
d
---------C
d
reverse current VR= 30 V; see Fig.3 −−
V
= 30 V; Tj=85°C; see Fig.3 −−
R
10
200
diode series resistance f = 100 MHz; VR is the value at which Cd=30pF − 0.65 0.8 Ω
diode capacitance VR= 1 V; f = 1 MHz; see Figs 2 and 4
V
= 28 V; f = 1 MHz; see Figs 2 and 4 2.361 − 2.754 pF
R
34.65
−
42.35 pF
capacitance ratio f = 1 MHz − 1.3 −
capacitance ratio f = 1 MHz 13.5 −−
capacitance ratio f = 1 MHz − 1.08 −
capacitance matching V
= 1 to 28 V; in a sequence of 15 diodes
R
−−2%
(gliding)
nA
nA
1997 Dec 17 2
Philips Semiconductors Product specification
VHF variable capacitance diode BB153
GRAPHICAL DATA
50
handbook, full pagewidth
C
d
(pF)
40
30
20
10
0
−1
10
f =1 MHz; Tj=25°C.
110
V
(V)
R
Fig.2 Diode capacitance as a function of reverse voltage; typical values.
MBK191
2
10
o
T ( C)
j
MLC816
3
10
handbook, halfpage
I
R
(nA)
2
10
10
50
Fig.3 Reverse current as a function of junction
temperature; maximum values.
V (V)
R
MLC815
2
3
10
handbook, halfpage
TC
d
(K−1)
4
10
5
10
1000
Tj= 0 to 85°C.
1
10
11010
Fig.4 Temperature coefficient of diode
capacitance as a function of
reverse voltage; typical values.
1997 Dec 17 3
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