Philips BB152 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
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M3D049
BB152
VHF variable capacitance diode
Product specification
1998 Sep 09
Philips Semiconductors Product specification
VHF variable capacitance diode BB152
FEATURES
• High linearity
• Excellent matching to 2% DMA
• Very small plastic SMD package
• C28: 2.7 pF; ratio: 22
• Low series resistance.
APPLICATIONS
• Electronic tuning in VHF television
tuners, band A up to 160 MHz
• Voltage controlled oscillators
DESCRIPTION
The BB152 is a planar technology
variable capacitance diode, in a
SOD323 package. The excellent
matching performance is achieved by
gliding matching and a direct
matching assembly procedure.
PINNING
PIN DESCRIPTION
1 cathode
2 anode
handbook, 2 columns
12
MAM392
Marking code: PB.
Cathode side indicated by a bar.
Fig.1 Simplified outline
(SOD323) and symbol.
(VCO).
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
R
V
RM
I
F
T
stg
T
j
continuous reverse voltage
peak reverse voltage in series with a 10 kΩ resistor
continuous forward current −
storage temperature
operating junction temperature
−
−
−55
−55
32 V
35 V
20 mA
+150 °C
+125 °C
ELECTRICAL CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
R
r
s
reverse current VR= 30 V; see Fig.3 −−
V
= 30 V; Tj=85°C; see Fig.3 −−
R
diode series resistance f = 100 MHz;
− 1 1.2 Ω
10
200
nA
nA
VR is the value at which Cd=30pF
C
d
C
d1V()
-----------------C
d2V()
C
d1V()
-------------------C
d28V()
C
d25V()
-------------------C
d28V()
C
∆
d
---------C
d
diode capacitance VR= 1 V; f = 1 MHz; see Figs 2 and 4
= 28 V; f = 1 MHz; see Figs 2 and 4 2.48 − 2.89 pF
V
R
52
−
62 pF
capacitance ratio f = 1 MHz − 1.31 −
capacitance ratio f = 1 MHz 20.6 −−
capacitance ratio f = 1 MHz − 1.05 −
capacitance matching V
= 1 to 28 V; in a sequence of 15
R
−−2%
diodes (gliding)
1998 Sep 09 2
Philips Semiconductors Product specification
VHF variable capacitance diode BB152
GRAPHICAL DATA
80
handbook, full pagewidth
C
d
(pF)
70
60
50
40
30
20
10
0
−1
f =1 MHz; Tj=25°C.
10110
VR (V)
Fig.2 Diode capacitance as a function of reverse voltage; typical values.
MBK439
2
10
3
10
handbook, halfpage
I
R
(nA)
2
10
10
50
o
T ( C)
j
Fig.3 Reverse current as a function of junction
temperature; maximum values.
MLC816
V (V)
R
MLC815
2
3
10
handbook, halfpage
TC
d
(K−1)
4
10
5
10
1
1000
10
Tj= 0 to 85°C.
11010
Fig.4 Temperature coefficient of diode
capacitance as a function of
reverse voltage; typical values.
1998 Sep 09 3
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