Philips BAS55 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D088
BAS55
High-speed diode
Product specification
Supersedes data of April 1996
File under Discrete Semiconductors, SC01
1996 Sep 10
Philips Semiconductors Product specification
High-speed diode BAS55
FEATURES
• Small plastic SMD package
• High switching speed: max. 6 ns
• Continuous reverse voltage:
max. 60 V
DESCRIPTION
The BAS55 is a high-speed switching
diode fabricated in planar technology,
and encapsulated in the small
rectangular plastic SMD SOT23
package.
• Repetitive peak reverse voltage:
max. 60 V
• Repetitive peak forward current:
max. 600 mA.
handbook, halfpage
21
APPLICATIONS
• High-speed switching in surface
mounted circuits.
Marking code: L5p.
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
PINNING
3
PIN DESCRIPTION
1 anode
2 not connected
3 cathode
2
n.c.
3
1
MAM185
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
I
F
I
FRM
I
FSM
RRM
R
repetitive peak reverse voltage − 60 V
continuous reverse voltage − 60 V
continuous forward current see Fig.2; note 1 − 250 mA
repetitive peak forward current − 600 mA
non-repetitive peak forward current square wave; Tj=25°C prior to
surge; see Fig.4
t=1µs − 9A
t = 100 µs − 3A
t = 10 ms − 1.7 A
P
tot
T
stg
T
j
total power dissipation T
storage temperature −65 +150 °C
junction temperature − 150 °C
=25°C; note 1 − 250 mW
amb
Note
1. Device mounted on an FR4 printed-circuit board.
1996 Sep 10 2
Philips Semiconductors Product specification
High-speed diode BAS55
ELECTRICAL CHARACTERISTICS
T
=25°C; unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
F
I
R
C
d
t
rr
V
fr
forward voltage see Fig.3; IF= 200 mA; DC value;
note 1
reverse current see Fig.5
=60V − 100 nA
V
R
=60V; Tj= 150 °C − 100 µA
V
R
diode capacitance f = 1 MHz; VR= 0; see Fig.6 − 2.5 pF
reverse recovery time when switched from IF= 400 mA to
IR= 400 mA; RL= 100 Ω;
measured at IR= 40 mA; see Fig.7
forward recovery voltage when switched to IF= 400 mA;
tr= 30 ns; see Fig.8
when switched to I
= 400 mA;
F
tr= 100 ns; see Fig.8
− 1.0 V
− 6ns
− 2V
− 1.5 V
Note
1. T
=25°C; device has reached the thermal equilibrium when mounted on an FR4 printed-circuit board.
amb
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
R
th j-tp
th j-a
thermal resistance from junction to tie-point 330 K/W
thermal resistance from junction to ambient note 1 500 K/W
Note
1. Device mounted on an FR4 printed-circuit board.
1996 Sep 10 3
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