Philips BAS45AL Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D121
BAS45AL
Low-leakage diode
Product specification
Supersedes data of 1999 May 04
1999 May 28
Philips Semiconductors Product specification
Low-leakage diode BAS45AL
FEATURES
• Continuous reverse voltage:
max. 125 V
DESCRIPTION
Epitaxial medium-speed switching diode with a low leakage current in a small
SOD80C glass SMD package.
• Repetitive peak forward current:
max. 625 mA
• Low reverse current: max. 1 nA
handbook, 4 columns
ka
• Switching time: typ. 1.5 µs.
APPLICATION
• Low leakage current applications.
Fig.1 Simplified outline (SOD80C) and symbol.
MAM061
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
I
F
I
FRM
I
FSM
RRM
R
repetitive peak reverse voltage − 125 V
continuous reverse voltage − 125 V
continuous forward current note 1; see Fig.2 − 250 mA
repetitive peak forward current − 625 mA
non-repetitive peak forward current square wave; Tj=25°C prior to
surge; see Fig.4
t
=1µs − 4A
p
t
=1ms − 1A
p
t
=1s − 0.5 A
p
P
tot
T
stg
T
j
total power dissipation T
=25°C; note 1 − 400 mW
amb
storage temperature −65 +175 °C
junction temperature − 175 °C
Note
1. Device mounted on a FR4 printed-circuit board.
1999 May 28 2
Philips Semiconductors Product specification
Low-leakage diode BAS45AL
ELECTRICAL CHARACTERISTICS
T
= 25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
F
I
R
C
d
t
rr
forward voltage see Fig.3
I
=1mA − 780 mV
F
I
=10mA − 860 mV
F
= 100 mA − 1000 mV
I
F
reverse current see Fig.5
V
= 125 V; E
R
= 30 V; Tj= 125 °C; E
V
R
V
= 125 V; Tj= 125 °C; E
R
V
= 125 V; Tj= 150 °C; E
R
= 100 lx − 1nA
max
= 100 lx − 300 nA
max
= 100 lx − 500 nA
max
= 100 lx − 2 µA
max
diode capacitance f = 1 MHz; VR= 0; see Fig.6 − 4pF
reverse recovery time when switched from IF= 10 mA to
1.5 −µs
IR= 10 mA; RL= 100 Ω;
measured at IR= 1 mA; see Fig.7
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
R
th j-tp
th j-a
thermal resistance from junction to tie-point 300 K/W
thermal resistance from junction to ambient note 1 375 K/W
Note
1. Device mounted on a FR4 printed-circuit board.
1999 May 28 3
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