Philips BAS45A Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

ook, halfpage

M3D050

BAS45A

Low-leakage diode

Product specification
Supersedes data of June 1994

1996 Mar 13

Philips Semiconductors Product specification

Low-leakage diode BAS45A

FEATURES

• Continuous reverse voltage:
max. 125 V

DESCRIPTION

Epitaxial medium-speed switching diode with a low leakage current in a
hermetically-sealed glass SOD68 (DO-34) package.

• Repetitive peak forward current:
max. 625 mA

• Low reverse current: max. 1 nA

• Switching time: typ. 1.5 µs.

handbook, halfpage

k

a

MAM156

APPLICATION

• Low leakage current applications.

Fig.1 Simplified outline (SOD68; DO-34) and symbol.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V
V
I

F

I

FRM

I

FSM

RRM
R

repetitive peak reverse voltage − 125 V
continuous reverse voltage − 125 V
continuous forward current see Fig.2; note 1 − 250 mA
repetitive peak forward current − 625 mA
non-repetitive peak forward current square wave; Tj=25°C prior to

surge; see Fig.4

t

=1µs − 4A

p

=1ms − 1A

t

p

t

=1s − 0.5 A

p

P

tot

T

stg

T

j

total power dissipation T

=25°C − 300 mW

amb

storage temperature −65 +175 °C
junction temperature − 175 °C

Note

1. Device mounted on a printed-circuit board without metallization pad.

1996 Mar 13 2