DISCRETE SEMICONDUCTORS
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M3D102
BAS40W series
Schottky barrier (double) diodes
Product specification
Supersedes data of 1997 Oct 28
1999 Apr 26
Philips Semiconductors Product specification
Schottky barrier (double) diodes BAS40W series
FEATURES
• Low forward voltage
• Guard ring protected
• Very small SMD package
• Low diode capacitance.
APPLICATIONS
• Ultra high-speed switching
• Voltage clamping
• Protection circuits
• Blocking diodes.
DESCRIPTION
Planar Schottky barrier diodes
encapsulated in a SOT323 very small
plastic SMD package. Single diodes
and double diodes with different
pinning are available.
MARKING
PINNING
BAS40
PIN
W -04W -05W -06W
1a
2 n.c. k
a1a1k
1
a
2
2
3k1k1,a2k1,k2a1,a
handbook, 2 columns
Top view
3
12
MBC870
Fig.1 Simplified outline
(SOT323) and pin
configuration.
1
k
2
3
12
2
MLC358
Fig.3 BAS40-04W diode
configuration (symbol).
3
12
MLC359
Fig.4 BAS40-05W diode
configuration (symbol).
TYPE NUMBER
MARKING
BAS40W 63
BAS40-04W 64
BAS40-05W 65
BAS40-06W 66
CODE
3
12
n.c.
MLC357
Fig.2 BAS40W single diode
configuration (symbol).
3
12
MLC360
Fig.5 BAS40-06W diode
configuration (symbol).
1999 Apr 26 2
Philips Semiconductors Product specification
Schottky barrier (double) diodes BAS40W series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per diode
V
R
I
F
I
FRM
I
FSM
T
stg
T
j
T
amb
ELECTRICAL CHARACTERISTICS
=25°C unless otherwise specified.
T
amb
continuous reverse voltage − 40 V
continuous forward current − 120 mA
repetitive peak forward current tp≤ 1s; δ≤0.5 − 120 mA
non-repetitive peak forward current tp< 10 ms − 200 mA
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
SYMBOL PARAMETER CONDITIONS MAX. UNIT
Per diode
V
F
I
R
τ charge carrier life time I
C
d
continuous forward voltage see Fig.6
I
= 1 mA 380 mV
F
I
= 10 mA 500 mV
F
I
=40mA 1 V
F
continuous reverse current VR= 30 V; note 1; see Fig.7 1 µA
V
= 40 V; note 1; see Fig.7 10 µA
R
= 5 mA; Krakauer method 100 ps
F
diode capacitance VR= 0; f = 1 MHz; see Fig.9 5 pF
Note
1. Pulse test: t
= 300 µs; δ = 0.02.
p
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient note 1 625 K/W
Note
1. Refer to SOT323 standard mounting conditions.
1999 Apr 26 3