Philips BAS40-04, BAS40-06, BAS40, BAS40-07 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ge
M3D088
M3D071
BAS40 series
Schottky barrier (double) diodes
Product specification
Supersedes data of 1997 Oct 24
1999 Apr 28
Philips Semiconductors Product specification
Schottky barrier (double) diodes BAS40 series
FEATURES
• Low forward voltage
• Guard ring protected
• Small plastic SMD package
• Low diode capacitance.
APPLICATIONS
• Ultra high-speed switching
• Voltage clamping
• Protection circuits
• Blocking diodes.
DESCRIPTION
Planar Schottky barrier diodes with an
integrated guard ring for stress
protection. Single diodes and double
diodes with different pinning are
available. The diodes BAS40,
BAS40-04, BAS40-05 and BAS40-06
are encapsulated in a SOT23 small
plastic SMD package. The BAS40-07
is encapsulated in a SOT143B small
plastic SMD package
MARKING
TYPE NUMBER
MARKING
(1)
CODE
BAS40 43∗
BAS40-04 44∗
BAS40-05 45∗
BAS40-06 46∗
BAS40-07 47p
PINNING SOT23 (see Fig.1a)
PIN
BAS40
(see Fig.1b)
1a
1
2 n.c. k
3k
handbook, 2 columns
Top view
1
3
MGC482
a. Simplified outline SOT23.
handbook, 2 columns
3
1
n.c.
MGC483
Fig.1 Simplified outline (SOT23) and symbols.
BAS40-04
(see Fig.1c)
21
2
DESCRIPTION
a
1
2
k
,a
1
2
handbook, 2 columns
handbook, 2 columns
handbook, 2 columns
BAS40-05
(see Fig.1d)
a
1
a
2
k1,k
2
12
BAS40-06
(see Fig.1e)
k
1
k
2
a1,a
3
MGC485
2
c. BAS40-04
3
12
MGC484
d. BAS40-05.
3
12
MGC486
e. BAS40-06.b. BAS40 single diode.
Note
1. ∗ = p: Made in Hong Kong.
∗ = t: Made in Malaysia.
handbook, halfpage
PINNING SOT143B (see Fig.2)
PIN DESCRIPTION
BAS40-07
1k
2k
3a
4a
1
2
2
1
Fig.2 Simplified outline (SOT143B) BAS40-07 and symbol.
1999 Apr 28 2
43
Top view
21
4
1
MAM194
3
2
Philips Semiconductors Product specification
Schottky barrier (double) diodes BAS40 series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per diode
V
R
I
F
I
FRM
I
FSM
T
stg
T
j
T
amb
ELECTRICAL CHARACTERISTICS
T
=25°C unless otherwise specified.
amb
continuous reverse voltage
continuous forward current −
repetitive peak forward current tp≤ 1s;δ≤0.5
non-repetitive peak forward current tp< 10 ms
storage temperature
junction temperature
operating ambient temperature
−
−
−
−65
−
−65
40 V
120 mA
120 mA
200 mA
+150 °C
150 °C
+150 °C
SYMBOL PARAMETER CONDITIONS MAX. UNIT
Per diode
V
F
I
R
C
d
forward voltage see Fig.3
I
=1mA
F
=10mA
I
F
I
=40mA
F
reverse current VR= 30 V; note 1; see Fig.4
= 40 V; note 1; see Fig.4
V
R
diode capacitance f = 1 MHz; VR= 0 ; see Fig.6
380 mV
500 mV
1V
1
10
µA
µA
5pF
Note
1. Pulse test: t
= 300 µs; δ = 0.02.
p
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient note 1 500 K/W
Note
1. Refer to SOT23 or SOT143B standard mounting conditions.
1999 Apr 28 3
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