Philips BAS40-04W, BAS40W, BAS40-05W, BAS40-06W Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
k, halfpage
M3D102
BAS40W series
Schottky barrier (double) diodes
Product specification
Supersedes data of 1997 Oct 28
1999 Apr 26
Philips Semiconductors Product specification
Schottky barrier (double) diodes BAS40W series
FEATURES
• Low forward voltage
• Guard ring protected
• Very small SMD package
• Low diode capacitance.
APPLICATIONS
• Ultra high-speed switching
• Voltage clamping
• Protection circuits
• Blocking diodes.
DESCRIPTION
Planar Schottky barrier diodes
encapsulated in a SOT323 very small
plastic SMD package. Single diodes
and double diodes with different
pinning are available.
MARKING
PINNING
BAS40
PIN
W -04W -05W -06W
1a
2 n.c. k
a1a1k
1
a
2
2
3k1k1,a2k1,k2a1,a
handbook, 2 columns
Top view
3
12
MBC870
Fig.1 Simplified outline
(SOT323) and pin
configuration.
1
k
2
3
12
2
MLC358
Fig.3 BAS40-04W diode
configuration (symbol).
3
12
MLC359
Fig.4 BAS40-05W diode
configuration (symbol).
TYPE NUMBER
MARKING
BAS40W 63
BAS40-04W 64
BAS40-05W 65
BAS40-06W 66
CODE
3
12
n.c.
MLC357
Fig.2 BAS40W single diode
configuration (symbol).
3
12
MLC360
Fig.5 BAS40-06W diode
configuration (symbol).
1999 Apr 26 2
Philips Semiconductors Product specification
Schottky barrier (double) diodes BAS40W series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per diode
V
R
I
F
I
FRM
I
FSM
T
stg
T
j
T
amb
ELECTRICAL CHARACTERISTICS
=25°C unless otherwise specified.
T
amb
continuous reverse voltage − 40 V
continuous forward current − 120 mA
repetitive peak forward current tp≤ 1s; δ≤0.5 − 120 mA
non-repetitive peak forward current tp< 10 ms − 200 mA
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
SYMBOL PARAMETER CONDITIONS MAX. UNIT
Per diode
V
F
I
R
τ charge carrier life time I
C
d
continuous forward voltage see Fig.6
I
= 1 mA 380 mV
F
I
= 10 mA 500 mV
F
I
=40mA 1 V
F
continuous reverse current VR= 30 V; note 1; see Fig.7 1 µA
V
= 40 V; note 1; see Fig.7 10 µA
R
= 5 mA; Krakauer method 100 ps
F
diode capacitance VR= 0; f = 1 MHz; see Fig.9 5 pF
Note
1. Pulse test: t
= 300 µs; δ = 0.02.
p
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient note 1 625 K/W
Note
1. Refer to SOT323 standard mounting conditions.
1999 Apr 26 3
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