Philips BAS35, BAS31, BAS29 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D088
BAS29; BAS31; BAS35
General purpose controlled
avalanche (double) diodes
Product specification
Supersedes data of 1996 Sep 10
1999 May 21
Philips Semiconductors Product specification
General purpose controlled avalanche
(double) diodes
FEATURES
• Small plastic SMD package
• Switching speed: max. 50 ns
• General application
• Continuous reverse voltage:
max. 90 V
• Repetitive peak reverse voltage:
max. 110 V
• Repetitive peak forward current:
max. 600 mA
• Repetitive peak reverse current:
max. 600 mA.
APPLICATIONS
• General purpose switching in e.g.
surface mounted circuits.
DESCRIPTION
General purpose switching diodes
fabricated in planar technology, and
encapsulated in small rectangular
plastic SMD SOT23 packages.
The BAS29 consists of a single diode.
The BAS31 has two diodes in series.
The BAS35 has two diodes with a
common anode.
MARKING
PINNING
PIN
1 anode anode cathode (k1)
2 not connected cathode cathode (k2)
3 cathode common connection common anode
handbook, halfpage
a. Simplified outline. c. BAS31 diode.
2
n.c.
b. BAS29 diode. d. BAS35 diode.
BAS29; BAS31; BAS35
DESCRIPTION
BAS29 BAS31 BAS35
21
12
3
3
1
3
3
12
MAM233
TYPE NUMBER
MARKING
CODE
BAS29 L20
BAS31 L21
BAS35 L22
Fig.1 Simplified outline (SOT23) and symbols.
1999 May 21 2
Philips Semiconductors Product specification
General purpose controlled avalanche
BAS29; BAS31; BAS35
(double) diodes
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per diode
V
RRM
V
R
I
F
I
FRM
I
FSM
P
tot
I
RRM
E
RRM
T
stg
T
j
repetitive peak reverse voltage − 110 V
continuous reverse voltage − 90 V
continuous forward current single diode loaded; see Fig.2;
− 250 mA
note 1
double diode loaded; see Fig.2;
− 150 mA
note 1
repetitive peak forward current − 600 mA
non-repetitive peak forward current square wave; Tj=25°C prior to
surge; see Fig.4
t=1µs − 10 A
t = 100 µs − 4A
t=1s − 0.75 A
total power dissipation T
=25°C; note 1 − 250 mW
amb
repetitive peak reverse current − 600 mA
repetitive peak reverse energy tp≥ 50 µs; f ≤ 20 Hz; Tj=25°C − 5mJ
storage temperature −65 +150 °C
junction temperature − 150 °C
Note
1. Device mounted on an FR4 printed-circuit board.
1999 May 21 3
Philips Semiconductors Product specification
General purpose controlled avalanche
BAS29; BAS31; BAS35
(double) diodes
ELECTRICAL CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per diode
V
I
R
V
C
t
rr
F
(BR)R
d
forward voltage see Fig.3
=10mA − 750 mV
I
F
I
=50mA − 840 mV
F
= 100 mA − 900 mV
I
F
I
= 200 mA − 1V
F
I
= 400 mA − 1.25 V
F
reverse current see Fig.5
=90V − 100 nA
V
R
V
=90V; Tj= 150 °C − 100 µA
R
reverse avalanche breakdown
IR= 1 mA 120 170 V
voltage
diode capacitance f = 1 MHz; VR= 0; see Fig.6 − 35 pF
reverse recovery time when switched from IF= 30 mA to
− 50 ns
IR= 30 mA; RL= 100 Ω;
measured at IR= 3 mA; see Fig.7
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
R
th j-tp
th j-a
thermal resistance from junction to tie-point 360 K/W
thermal resistance from junction to ambient note 1 500 K/W
Note
1. Device mounted on an FR4 printed-circuit board.
1999 May 21 4
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