Philips BAS32L Datasheet
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M3D054
BAS32L
High-speed diode
Product specification
Supersedes data of April 1996
1996 Sep 10
Philips Semiconductors Product specification
High-speed diode BAS32L
FEATURES
• Small hermetically sealed glass
SMD package
• High switching speed: max. 4 ns
DESCRIPTION
The BAS32L is a high-speed switching diode fabricated in planar technology,
and encapsulated in the small hermetically sealed glass SOD80C SMD
package.
• Continuous reverse voltage:
max. 75 V
• Repetitive peak reverse voltage:
max. 75 V
handbook, 4 columns
ka
• Repetitive peak forward current:
max. 450 mA.
APPLICATIONS
• High-speed switching
Cathode indicated by black band.
Fig.1 Simplified outline (SOD80C) and symbol.
MAM061
• Fast logic applications.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
I
F
I
FRM
I
FSM
RRM
R
repetitive peak reverse voltage − 75 V
continuous reverse voltage − 75 V
continuous forward current see Fig.2; note 1 − 200 mA
repetitive peak forward current − 450 mA
non-repetitive peak forward current square wave; Tj=25°C prior to
surge; see Fig.4
t=1µs − 4A
t=1ms − 1A
t=1s − 0.5 A
P
tot
T
stg
T
j
total power dissipation T
=25°C; note 1 − 500 mW
amb
storage temperature −65 +200 °C
junction temperature − 200 °C
Note
1. Device mounted on an FR4 printed-circuit board.
1996 Sep 10 2
Philips Semiconductors Product specification
High-speed diode BAS32L
ELECTRICAL CHARACTERISTICS
T
=25°C; unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
F
I
R
V
(BR)R
C
d
t
rr
V
fr
forward voltage see Fig.3
I
= 5 mA 620 750 mV
F
I
= 100 mA − 1000 mV
F
= 100 mA; Tj= 100 °C − 930 mV
I
F
reverse current see Fig.5
V
=20V − 25 nA
R
=75V − 5 µA
V
R
V
=20V; Tj= 150 °C − 50 µA
R
V
=75V; Tj= 150 °C − 100 µA
R
reverse breakdown voltage IR= 100 µA 100 − V
diode capacitance f = 1 MHz; VR= 0; see Fig.6 2 pF
reverse recovery time when switched from IF= 10 mA to
4ns
IR= 10 mA; RL= 100 Ω;
measured at IR= 1 mA; see Fig.7
forward recovery voltage when switched from IF= 50 mA;
− 2.5 V
tr= 20 ns; see Fig.8
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
R
th j-tp
th j-a
thermal resistance from junction to tie-point 300 K/W
thermal resistance from junction to ambient note 1 350 K/W
Note
1. Device mounted on an FR4 printed-circuit board.
1996 Sep 10 3
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