Philips BAS321 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D049
BAS321
General purpose diode
Product specification
1999 Feb 09
Philips Semiconductors Product specification
General purpose diode BAS321
FEATURES
• Small plastic SMD package
• Switching speed: max. 50 ns
• General application
PINNING
PIN DESCRIPTION
1 cathode
2 anode
• Continuous reverse voltage: max. 200 V
• Repetitive peak reverse voltage: max. 250 V
• Repetitive peak forward current: max. 625 mA.
handbook, halfpage
12
APPLICATIONS
• General purpose switching in e.g. surface mounted
circuits.
DESCRIPTION
The BAS321 is a general purpose diode fabricated in
Marking code: A7
Fig.1 Simplified outline (SOD323) and symbol.
MAM406
planar technology and encapsulated in a plastic SOD323
package.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
I
F
I
FRM
I
FSM
RRM
R
repetitive peak reverse voltage − 250 V
continuous reverse voltage − 200 V
continuous forward current see Fig. 2; note 1 − 250 mA
repetitive peak forward current tp< 0.5 ms; δ≤0.25 − 625 mA
non-repetitive peak forward current square wave; Tj=25°C prior to
surge; see Fig. 4
t=1µs − 9A
t = 100 µs − 3A
t = 10 ms − 1.7 A
P
tot
T
stg
T
j
total power dissipation T
=25°C; note 1 − 300 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
Note
1. Device mounted on an FR4 printed circuit-board.
1999 Feb 09 2
Philips Semiconductors Product specification
General purpose diode BAS321
ELECTRICAL CHARACTERISTICS
T
=25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MAX. UNIT
V
F
I
R
C
d
t
rr
THERMAL CHARACTERISTICS
forward voltage see Fig. 3
I
= 100 mA 1 V
F
I
= 200 mA 1.25 V
F
reverse current see Fig. 5
V
= 200 V 100 nA
R
V
= 200 V; Tj= 150 °C 100 µA
R
diode capacitance f = 1 MHz; VR= 0; see Fig. 6 2 pF
reverse recovery time when switched from IF= 30 mA to
50 ns
IR= 30 mA; RL= 100 Ω; measured at
IR= 3 mA; see Fig.8
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-s
thermal resistance from junction to soldering
Ts=90°C; note 1 130 K/W
point
R
th j-a
thermal resistance from junction to ambient note 2 366 K/W
Notes
1. Soldering point of cathode tab.
2. Device mounted on an FR4 printed circuit board.
1999 Feb 09 3
Philips Semiconductors Product specification
General purpose diode BAS321
GRAPHICAL DATA
150
T
amb
MBK927
(°C)
300
handbook, halfpage
I
F
(mA)
200
100
0
0 50 100 200
Device mounted on an FR4 printed-circuit board.
Fig.2 Maximum permissible continuous forward
current as a function of ambient temperature.
600
handbook, halfpage
I
F
(mA)
400
200
0
02
(1) Tj= 150°C; typical values.
(2) Tj=25°C; typical values.
(3) Tj=25°C; maximum values.
Fig.3 Forward current as a function of
forward voltage.
1
MBG384
(1) (3)(2)
VF (V)
2
10
handbook, full pagewidth
I
FSM
(A)
10
1
−1
10
1
Based on square wave currents.
Tj=25°C prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
MBG703
10
2
10
3
10
tp (µs)
4
10
1999 Feb 09 4
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