Philips BAS316 Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

book, halfpage

M3D049

BAS316

High-speed diode

Product specification
Supersedes data of 1998 Jan 08

1998 Mar 26

Philips Semiconductors Product specification

High-speed diode BAS316

FEATURES

• Very small plastic SMD package

• High switching speed: max. 4 ns

DESCRIPTION

The BAS316 is a high-speed switching diode fabricated in planar technology,
and encapsulated in the SOD323 SMD plastic package.

• Continuous reverse voltage:
max. 75 V

• Repetitive peak reverse voltage:
max. 85 V

handbook, halfpage

ka

• Repetitive peak forward current:
max. 500 mA.

APPLICATIONS

• High-speed switching in e.g.

Marking code: A6.
Cathode side indicated by a bar.

MAM157

surface mounted circuits.

Fig.1 Simplified outline (SOD323) and symbol.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V
V
I

F

I

FRM

I

FSM

RRM
R

repetitive peak reverse voltage − 85 V
continuous reverse voltage − 75 V
continuous forward current Ts=90°C; note 1; see Fig.2 − 250 mA
repetitive peak forward current − 500 mA
non-repetitive peak forward current square wave; Tj=25°C prior to

surge; see Fig.4

t=1µs − 4A
t=1ms − 1A
t=1s − 0.5 A

P

tot

T

stg

T

j

total power dissipation Ts=90°C; note 1 − 400 mW
storage temperature −65 +150 °C
junction temperature − 150 °C

Note

1. T

is the temperature at the soldering point of the cathode tab.

s

1998 Mar 26 2

Philips Semiconductors Product specification

High-speed diode BAS316

ELECTRICAL CHARACTERISTICS

T

=25°C unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MAX. UNIT

V

F

I

R

C

d

t

rr

V

fr

forward voltage see Fig.3

I

= 1 mA 715 mV

F

I

= 10 mA 855 mV

F

=50mA 1 V

I

F

I

= 150 mA 1.25 V

F

reverse current see Fig.5

= 25 V 30 nA

V

R

V

=75V 1 µA

R

V

= 25 V; Tj= 150 °C30µA

R

= 75 V; Tj= 150 °C; 50 µA

V

R

diode capacitance f = 1 MHz; VR= 0; see Fig.6 1.5 pF
reverse recovery time when switched from IF= 10 mA to IR= 10 mA;

4ns

RL= 100 Ω; measured at IR= 1 mA; see Fig.7

forward recovery voltage when switched from IF= 10 mA; tr= 20 ns; see Fig.8 1.75 V

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-s

thermal resistance from junction to soldering point note 1 150 K/W

Note

1. Soldering point of the cathode tab.

1998 Mar 26 3

Philips Semiconductors Product specification

High-speed diode BAS316

GRAPHICAL DATA

500

handbook, halfpage

I

F

(mA)

400

300

200

100

0

0 100 15050 200

Fig.2 Maximum permissible continuous

MGM762

Ts (oC)

forward current as a function of
soldering point temperature.

300

handbook, halfpage

I

F

(mA)

200

100

0

02

(1) Tj= 150°C; typical values.
(2) Tj=25°C; typical values.
(3) Tj=25°C; maximum values.

Fig.3 Forward current as a function of

forward voltage.

(1) (3)(2)

1

MBG382

VF (V)

2

10

handbook, full pagewidth

I

FSM

(A)

10

1

−1

10

1

Based on square wave currents.
Tj=25°C prior to surge.

Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.

MBG704

10

2

10

3

10

tp (µs)

4

10

1998 Mar 26 4