Philips BAS28 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D070
BAS28
High-speed double diode
Product specification
Supersedes data of April 1996
1996 Sep 10
Philips Semiconductors Product specification
High-speed double diode BAS28
FEATURES
• Small plastic SMD package
• High switching speed: max. 4 ns
• Continuous reverse voltage:
max. 75 V
• Repetitive peak reverse voltage:
max. 85 V
• Repetitive peak forward current:
max. 500 mA .
APPLICATIONS
• High-speed switching in e.g.
surface mounted circuits.
DESCRIPTION
The BAS28 consists of two
high-speed switching diodes,
fabricated in planar technology, and
encapsulated in the small plastic
SMD SOT143 package. The diodes
are not connected.
handbook, halfpage
Top view
Marking code: JTp.
43
21
Fig.1 Simplified outline (SOT143) and symbol.
PINNING
PIN DESCRIPTION
1 cathode (k1)
2 cathode (k2)
3 anode (a2)
4 anode (a1)
4
3
1
2
MAM059
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
I
F
I
FRM
I
FSM
RRM
R
repetitive peak reverse voltage − 85 V
continuous reverse voltage − 75 V
continuous forward current see Fig.2; note 1 − 215 mA
repetitive peak forward current − 500 mA
non-repetitive peak forward current square wave; Tj=25°C prior to
surge; see Fig.4
t=1µs − 4A
t=1ms − 1A
t=1s − 0.5 A
P
tot
T
stg
T
j
total power dissipation T
=25°C; note 1 − 250 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
Note
1. Device mounted on an FR4 printed-circuit board.
1996 Sep 10 2
Philips Semiconductors Product specification
High-speed double diode BAS28
ELECTRICAL CHARACTERISTICS
T
=25°C; unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
F
I
R
C
d
t
rr
V
fr
forward voltage see Fig.3
I
=1mA − 715 mV
F
I
=10mA − 855 mV
F
=50mA − 1V
I
F
I
= 150 mA − 1.25 V
F
reverse current see Fig.5
=25V − 30 nA
V
R
V
=75V − 1 µA
R
V
=25V; Tj= 150 °C − 30 µA
R
=75V; Tj= 150 °C − 50 µA
V
R
diode capacitance f = 1 MHz; VR= 0; see Fig.6 − 1.5 pF
reverse recovery time when switched from IF= 10 mA to
− 4ns
IR= 10 mA; RL= 100 Ω;
measured at IR= 1 mA; see Fig.7
forward recovery voltage when switched from IF= 10 mA;
− 1.75 V
tr= 20 ns; see Fig.8
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
R
th j-tp
th j-a
thermal resistance from junction to tie-point 360 K/W
thermal resistance from junction to ambient note 1 500 K/W
Note
1. Device mounted on an FR4 printed-circuit board.
1996 Sep 10 3
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