Philips BA891 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
M3D319
BA891
Band-switching diode
Product specification
Supersedes data of 1998 Aug 18
1998 Aug 31
Philips Semiconductors Product specification
Band-switching diode BA891
FEATURES
• Ultra small plastic SMD package
• Low diode capacitance:
max. 1.05 pF
• Low diode forward resistance:
DESCRIPTION
The BA891 is a planar, high
performance band-switching diode in
the ultra small SOD523 SMD plastic
package.
PINNING
PIN DESCRIPTION
1 cathode
2 anode
max. 0.7 Ω
• Small inductance.
handbook, halfpage
12
APPLICATIONS
• Low loss band-switching in VHF
Top view
MAM405
television tuners
• Surface mount band-switching
circuits.
Marking code: 7.
The marking band indicates the cathode.
Fig.1 Simplified outline (SOD523) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
R
I
F
P
tot
T
stg
T
j
continuous reverse voltage − 35 V
continuous forward current − 100 mA
total power dissipation Ts=90°C − 715 mW
storage temperature −65 +150 °C
junction temperature −65 +150 °C
ELECTRICAL CHARACTERISTICS
= 25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
F
I
R
C
d
r
D
L
S
forward voltage IF=10mA − 1V
reverse current VR=30V − 20 nA
diode capacitance f = 1 MHz; note 1; see Fig.2
V
= 1 V 0.8 1.05 pF
R
V
= 3 V 0.65 0.9 pF
R
diode forward resistance f = 100 MHz; note 1; see Fig.3
I
= 3 mA 0.45 0.7 Ω
F
I
= 10 mA 0.36 0.5 Ω
F
series inductance 0.6 − nH
Note
1. Guaranteed on AQL basis; inspection level S4, AQL 1.0.
1998 Aug 31 2
Philips Semiconductors Product specification
Band-switching diode BA891
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
R
th j-s
GRAPHICAL DATA
thermal resistance from junction to soldering point 85 K/W
handbook, halfpage
1
C
d
(pF)
0.8
0.6
0.4
0.2
0
0102030
f =1 MHz; Tj=25°C.
MGL479
VR (V)
Fig.2 Diode capacitance as a function of reverse
voltage; typical values.
10
handbook, halfpage
r
D
(Ω)
1
−1
10
−1
10
f = 100 MHz; Tj=25°C.
110
MGL478
I
(mA)
F
Fig.3 Diode forward resistance as a function of
forward current; typical values.
1998 Aug 31 3
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