Philips BA683, BA682 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
, halfpage
M3D121
BA682; BA683
Band-switching diodes
Product specification
Supersedes data of April 1992
1996 Mar 13
Philips Semiconductors Product specification
Band-switching diodes BA682; BA683
FEATURES
• Continuous reverse voltage:
max. 35 V
DESCRIPTION
Planar high performance band-switching diodes in a glass SOD80
SMD package.
• Continuous forward current:
max. 100 mA
• Low diode capacitance:
max. 1.5 pF
handbook, 4 columns
ka
• Low diode forward resistance:
max. 0.7 to 1.2 Ω.
MAM061
APPLICATION
• Band-switching in VHF television
Fig.1 Simplified outline (SOD80) and symbol.
tuners.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER MIN. MAX. UNIT
V
R
I
F
T
stg
T
j
continuous reverse voltage − 35 V
continuous forward current − 100 mA
storage temperature −65 +150 °C
junction temperature − 150 °C
ELECTRICAL CHARACTERISTICS
= 25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MAX. UNIT
V
F
I
R
C
d
C
d
forward voltage IF= 100 mA; see Fig.2 1.0 V
reverse current see Fig.3
V
= 20V 50 nA
R
= 20 V; Tj=75°C1µA
V
R
diode capacitance f = 1 MHz; VR= 1 V; see Fig.4 1.5 pF
diode capacitance f = 1 MHz; VR= 3 V; see Fig.4
BA682 1.25 pF
BA683 1.20 pF
r
D
diode forward resistance IF= 3 mA; f = 200 MHz; see Fig.5
BA682 0.7 Ω
BA683 1.2 Ω
r
D
diode forward resistance IF= 10 mA; f = 200 MHz; see Fig.5
BA682 0.5 Ω
BA683 0.9 Ω
1996 Mar 13 2
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