Philips BA592 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
, halfpage
M3D049
BA592
Band-switching diode
Preliminary specification
File under Discrete Semiconductors, SC01
1998 May 07
Philips Semiconductors Preliminary specification
Band-switching diode BA592
FEATURES
• Small plastic SMD package
• Low diode capacitance
• Low diode forward resistance
PINNING SOD323
PIN DESCRIPTION
1 cathode
2 anode
• Small inductance.
APPLICATIONS
dbook, halfpage
12
• Low loss band-switching in VHF television tuners
• Surface mount band-switching circuits.
DESCRIPTION
Planar, high performance band-switch diode in a small
Top view
Marking code: A2.
MAM387
SMD plastic package (SOD323).
Fig.1 Simplified outline.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS. MIN. MAX. UNIT
V
R
I
F
P
tot
T
stg
T
j
continuous reverse voltage − 35 V
continuous forward current − 100 mA
total power dissipation TS=90°C − 500 mW
storage temperature −65 +150 °C
junction temperature −65 +150 °C
1998 May 07 2
Philips Semiconductors Preliminary specification
Band-switching diode BA592
ELECTRICAL CHARACTERISTICS
T
= 25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
I
R
C
d
r
D
1/g
p
L
S
Note
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
forward voltage IF=10mA −−1V
reverse current VR=20V −−20 nA
diode capacitance VR= 1 V; f = 1 MHz; note 1 − 0.92 1.4 pF
= 3 V; f = 1 MHz; note 1 0.6 0.85 1.1 pF
V
R
diode forward resistance IF= 3 mA; f = 100 MHz; note 1 − 0.45 0.7 Ω
I
= 10 mA; f = 100 MHz; note 1 − 0.36 0.5 Ω
F
reverse resistance VR= 1 V; f = 100 MHz; note 1 − 100 − kΩ
series inductance − 2 − nH
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-s
thermal resistance from junction to soldering point 120 K/W
GRAPHICAL DATA
10
r
D
(Ω)
1
0.1
0.1 1 10 100
I
F
(mA)
2
C
d
(pF)
1.6
1.2
0.8
0.4
0
0 102030
V
(V)
R
f =100 MHz; Tj=25°C.
Fig.2 Forward resistance as a function of
forward current; typical values.
1998 May 07 3
f = 1 MHz; Tj=25°C.
Fig.3 Diode capacitance as a function of reverse
voltage; typical values.
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