Philips BA483, BA482 Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

, halfpage

M3D050

BA482; BA483; BA484

Band-switching diodes

Product specification
Supersedes data of January 1982

1996 Apr 17

Philips Semiconductors Product specification

Band-switching diodes BA482; BA483; BA484

FEATURES

• Continuous reverse voltage:
max. 35 V

DESCRIPTION

Planar high performance band-switching diode in a hermetically sealed glass
SOD68 (DO-34) package.

• Continuous forward current:
max. 100 mA

• Low diode capacitance:
max. 1.0 to 1.6 pF

• Low diode forward resistance:
max. 0.7 to 1.2 Ω.

APPLICATION

handbook, halfpage

The diodes are type branded.

k

Fig.1 Simplified outline (SOD68; DO-34) and symbol.

a

MAM156

• VHF television tuners.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER MIN. MAX. UNIT

V

R

I

F

T

stg

T

j

continuous reverse voltage − 35 V
continuous forward current − 100 mA
storage temperature −65 +150 °C
junction temperature − 150 °C

ELECTRICAL CHARACTERISTICS

= 25°C unless otherwise specified.

T

j

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

V
I

C

F

R

d

forward voltage IF= 100 mA; see Fig.2 − 1.2 V
reverse current see Fig.3

= 20V − 100 nA

V

R

V

= 20 V; T

R

=75°C − 1 µA

amb

diode capacitance f = 1 to 100 MHz; VR= 3 V; see Fig.4

BA482 0.8 1.2 pF
BA483 0.7 1.0 pF
BA484 1.0 1.6 pF

r

D

diode forward resistance IF= 3 mA; f = 200 MHz; see Fig.5

BA482 0.6 0.7 Ω
BA483 0.8 1.2 Ω
BA484 0.8 1.2 Ω

1996 Apr 17 2