Philips BA423AL Datasheet
DISCRETE SEMICONDUCTORS
b
DATA SH EET
ook, halfpage
M3D121
BA423AL
AM band-switching diode
Product specification
Supersedes data of April 1992
1996 Mar 13
Philips Semiconductors Product specification
AM band-switching diode BA423AL
FEATURES
• Continuous reverse voltage:
max. 20 V
DESCRIPTION
Leadless diode in a hermetically-sealed glass SOD80C SMD package with
lead/tin plated metal discs at each end.
• Continuous forward current:
max. 50 mA
• Low diode capacitance:
max. 2.5 pF
handbook, 4 columns
ka
• Low diode forward resistance:
max. 1.2 Ω.
MAM061
APPLICATION
• Band switching in AM radio
Fig.1 Simplified outline (SOD80C) and symbol.
receivers.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER MIN. MAX. UNIT
V
R
I
F
T
stg
T
j
continuous reverse voltage − 20 V
continuous forward current − 50 mA
storage temperature −65 +150 °C
junction temperature − 150 °C
ELECTRICAL CHARACTERISTICS
= 25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MAX. UNIT
V
F
I
R
C
d
r
D
forward voltage IF= 50 mA; see Fig.2 0.9 V
reverse current see Fig.3
V
= 20V 100 nA
R
= 20 V; Tj= 125 °C5µA
V
R
diode capacitance f = 1 MHz; VR= 3 V; see Fig.4 2.5 pF
diode forward resistance IF= 10 mA; f = 1 MHz; see Fig.5 1.2 Ω
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
R
th j-tp
th j-a
thermal resistance from junction to tie-point 300 K/W
thermal resistance from junction to ambient note 1 375 K/W
Note
1. Device mounted on a FR4 printed-circuit board.
1996 Mar 13 2
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