Philips BA318, BA317, BA316 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
M3D176
BA316; BA317; BA318
High-speed diodes
Product specification
Supersedes data of April 1996
1996 Sep 03
Philips Semiconductors Product specification
High-speed diodes BA316; BA317; BA318
FEATURES
• Hermetically sealed leaded glass
SOD27 (DO-35) package
• High switching speed: max. 4 ns
DESCRIPTION
The BA316, BA317, BA318 are high-speed switching diodes fabricated in
planar technology, and encapsulated in hermetically sealed leaded glass
SOD27 (DO-35) packages.
• General application
• Continuous reverse voltage: 10 V,
30 V, 50 V
• Repetitive peak reverse voltage:
max. 15 V, 40 V, 60 V
• Repetitive peak forward current:
handbook, halfpage
k
a
MAM246
max. 225 mA.
The diodes are type branded.
APPLICATIONS
Fig.1 Simplified outline (SOD27; DO-35) and symbol.
• High-speed switching.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
RRM
repetitive peak reverse voltage −
BA316 − 15 V
BA317 − 40 V
BA318 − 60 V
V
R
continuous reverse voltage
BA316 − 10 V
BA317 − 30 V
BA318 − 50 V
I
F
I
FRM
I
FSM
continuous forward current see Fig.2; note 1 − 100 mA
repetitive peak forward current − 225 mA
non-repetitive peak forward current square wave; Tj=25°C prior to
surge; see Fig.4
t=1µs − 4A
t=1ms − 1A
t=1s − 0.5 A
P
tot
T
stg
T
j
total power dissipation T
=25°C; note 1 − 350 mW
amb
storage temperature −65 +200 °C
junction temperature − 200 °C
Note
1. Device mounted on an FR4 printed circuit-board; lead length 10 mm.
1996 Sep 03 2
Philips Semiconductors Product specification
High-speed diodes BA316; BA317; BA318
ELECTRICAL CHARACTERISTICS
T
=25°C; unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
F
I
R
C
d
t
rr
V
fr
forward voltage see Fig.3
I
=1mA − 700 mV
F
I
=10mA − 850 mV
F
= 100 mA − 1100 mV
I
F
reverse current see Fig.5
BA316 V
BA317 V
BA318 V
=10V − 200 nA
R
=10V; Tj= 150 °C − 100 µA
V
R
=10V − 50 nA
R
V
=30V − 200 nA
R
=30V; Tj= 150 °C − 100 µA
V
R
=30V − 50 nA
R
V
=50V − 200 nA
R
V
=50V; Tj= 150 °C − 100 µA
R
diode capacitance f = 1 MHz; VR= 0; see Fig.6 − 2pF
reverse recovery time when switched from IF= 10 mA to
− 4ns
IR= 60 mA; RL= 100 Ω;
measured at IR= 1 mA; see Fig.7
forward recovery voltage when switched from IF= 50 mA;
− 2.5 V
tr= 20 ns; see Fig.8
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
R
th j-tp
th j-a
thermal resistance from junction to tie-point lead length 10 mm 240 K/W
thermal resistance from junction to ambient lead length 10 mm; note 1 500 K/W
Note
1. Device mounted on a printed circuit-board without metallization pad.
1996 Sep 03 3
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