Philips BA315 Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

M3D176

BA315

Low-voltage stabistor

Product specification
Supersedes data of April 1992
File under Discrete Semiconductors, SC01

1996 Mar 21

Philips Semiconductors Product specification

Low-voltage stabistor BA315

FEATURES

• Low-voltage stabilization

• Forward voltage range:

DESCRIPTION

Low-voltage stabilization diode in a hermetically-sealed SOD27 (DO-35) glass
package.

480 mV to 1050 mV

• Total power dissipation:
max. 350 mW.

APPLICATIONS

• Low-voltage stabilization e.g.

handbook, halfpage

k

a

MAM246

– Bias stabilizer in class-B output

stages

Diodes are type branded.

– Clipping
– Clamping

Fig.1 Simplified outline (SOD27; DO-35) and symbol.

– Meter protection.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

R

I

F

P

tot

T

stg

T

j

continuous reverse voltage − 5V
continuous forward current − 100 mA
total power dissipation T

=25°C − 350 mW

amb

storage temperature −65 +200 °C
junction temperature − 200 °C

1996 Mar 21 2