Philips BA221 Datasheet

DISCRETE SEMICONDUCTORS
DATA SH EET
M3D176
BA221
High-speed diode
Product specification Supersedes data of April 1996
1996 Sep 03
Philips Semiconductors Product specification
High-speed diode BA221

FEATURES

Hermetically sealed leaded glass SOD27 (DO-35) package
High switching speed: max. 4 ns

DESCRIPTION

The BA221 is a high-speed switching diode fabricated in planar technology, and encapsulated in the hermetically sealed leaded glass SOD27 (DO-35) package.
General application
Continuous reverse voltage:
max. 30 V
Repetitive peak reverse voltage: max. 30 V
Repetitive peak forward current:
handbook, halfpage
k
a
MAM246
max. 400 mA.
The diode is type branded.

APPLICATIONS

Fig.1 Simplified outline (SOD27; DO-35) and symbol.
High-speed switching.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V V I
F
I
FRM
I
FSM
RRM R
repetitive peak reverse voltage 30 V continuous reverse voltage 30 V continuous forward current see Fig.2; note 1 200 mA repetitive peak forward current 400 mA non-repetitive peak forward current square wave; Tj=25°C prior to
surge; see Fig.4
t=1µs 9A t = 100 µs 3A t=1s 1A
P
tot
T
stg
T
j
total power dissipation T
=25°C; note 1 350 mW
amb
storage temperature 65 +200 °C junction temperature 200 °C
Note
1. Device mounted on an FR4 printed circuit-board; lead length 10 mm.
Philips Semiconductors Product specification
High-speed diode BA221

ELECTRICAL CHARACTERISTICS

T
=25°C; unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
F
I
R
C
d
t
rr
V
fr
forward voltage see Fig.3
I
=1mA 625 mV
F
I
= 100 mA 950 mV
F
= 200 mA 1050 mV
I
F
reverse current see Fig.5
V
=10V 25 nA
R
=30V 200 nA
V
R
V
=10V; Tj= 150 °C 50 µA
R
V
=30V; Tj= 150 °C 100 µA
R
diode capacitance f = 1 MHz; VR= 0; see Fig.6 2.5 pF reverse recovery time when switched from IF= 10 mA to
4ns IR= 60 mA; RL= 100 ; measured at IR= 1 mA; see Fig.7
forward recovery voltage when switched from IF= 400 mA;
2.0 V tr= 30 ns; see Fig.8

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT
R R
th j-tp th j-a
thermal resistance from junction to tie-point lead length 10 mm 240 K/W thermal resistance from junction to ambient lead length 10 mm; note 1 500 K/W
Note
1. Device mounted on a printed circuit-board without metallization pad.
Loading...
+ 4 hidden pages