Philips BA221 Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

M3D176

BA221

High-speed diode

Product specification
Supersedes data of April 1996

1996 Sep 03

Philips Semiconductors Product specification

High-speed diode BA221

FEATURES

• Hermetically sealed leaded glass
SOD27 (DO-35) package

• High switching speed: max. 4 ns

DESCRIPTION

The BA221 is a high-speed switching diode fabricated in planar technology,
and encapsulated in the hermetically sealed leaded glass SOD27 (DO-35)
package.

• General application

• Continuous reverse voltage:

max. 30 V

• Repetitive peak reverse voltage:
max. 30 V

• Repetitive peak forward current:

handbook, halfpage

k

a

MAM246

max. 400 mA.

The diode is type branded.

APPLICATIONS

Fig.1 Simplified outline (SOD27; DO-35) and symbol.

• High-speed switching.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V
V
I

F

I

FRM

I

FSM

RRM
R

repetitive peak reverse voltage − 30 V
continuous reverse voltage − 30 V
continuous forward current see Fig.2; note 1 − 200 mA
repetitive peak forward current − 400 mA
non-repetitive peak forward current square wave; Tj=25°C prior to

surge; see Fig.4

t=1µs − 9A
t = 100 µs − 3A
t=1s − 1A

P

tot

T

stg

T

j

total power dissipation T

=25°C; note 1 − 350 mW

amb

storage temperature −65 +200 °C
junction temperature − 200 °C

Note

1. Device mounted on an FR4 printed circuit-board; lead length 10 mm.

1996 Sep 03 2

Philips Semiconductors Product specification

High-speed diode BA221

ELECTRICAL CHARACTERISTICS

T

=25°C; unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

F

I

R

C

d

t

rr

V

fr

forward voltage see Fig.3

I

=1mA − 625 mV

F

I

= 100 mA − 950 mV

F

= 200 mA − 1050 mV

I

F

reverse current see Fig.5

V

=10V − 25 nA

R

=30V − 200 nA

V

R

V

=10V; Tj= 150 °C − 50 µA

R

V

=30V; Tj= 150 °C − 100 µA

R

diode capacitance f = 1 MHz; VR= 0; see Fig.6 − 2.5 pF
reverse recovery time when switched from IF= 10 mA to

− 4ns
IR= 60 mA; RL= 100 Ω;
measured at IR= 1 mA; see Fig.7

forward recovery voltage when switched from IF= 400 mA;

− 2.0 V
tr= 30 ns; see Fig.8

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R
R

th j-tp
th j-a

thermal resistance from junction to tie-point lead length 10 mm 240 K/W
thermal resistance from junction to ambient lead length 10 mm; note 1 500 K/W

Note

1. Device mounted on a printed circuit-board without metallization pad.

1996 Sep 03 3