Philips BA220 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
M3D176
BA220
High-speed diode
Product specification
Supersedes data of April 1996
File under Discrete Semiconductors, SC01
1996 Sep 03
Philips Semiconductors Product specification
High-speed diode BA220
FEATURES
• Hermetically sealed leaded glass
SOD27 (DO-35) package
• High switching speed: max. 4 ns
DESCRIPTION
The BA220 is a high-speed switching diode fabricated in planar technology,
and encapsulated in the hermetically sealed leaded glass SOD27 (DO-35)
package.
• General application
• Continuous reverse voltage:
max. 10 V
• Repetitive peak reverse voltage:
handbook, halfpage
k
a
max. 10 V
• Repetitive peak forward current:
MAM246
max. 400 mA.
The diode is type branded.
APPLICATIONS
Fig.1 Simplified outline (SOD27; DO-35) and symbol.
• High-speed switching.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
I
F
I
FRM
I
FSM
RRM
R
repetitive peak reverse voltage − 10 V
continuous reverse voltage − 10 V
continuous forward current see Fig.2; note 1 − 200 mA
repetitive peak forward current − 400 mA
non-repetitive peak forward current square wave; Tj=25°C prior to
surge; see Fig.4
t=1µs − 9A
t = 100 µs − 3A
t=1s − 1A
P
tot
T
stg
T
j
total power dissipation T
storage temperature −65 +200 °C
junction temperature − 200 °C
=25°C; note 1 − 350 mW
amb
Note
1. Device mounted on an FR4 printed circuit-board; lead length 10 mm.
1996 Sep 03 2
Philips Semiconductors Product specification
High-speed diode BA220
ELECTRICAL CHARACTERISTICS
T
=25°C; unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
F
I
R
C
d
t
rr
V
fr
forward voltage see Fig.3
= 0.1 mA 460 520 mV
I
F
= 1 mA 560 620 mV
I
F
= 5 mA 640 700 mV
I
F
= 10 mA 680 750 mV
I
F
= 100 mA 825 950 mV
I
F
reverse current see Fig.5
=10V − 1.5 µA
V
R
=10V; Tj= 150 °C − 50 µA
V
R
diode capacitance f = 1 MHz; VR= 0; see Fig.6 − 2.5 pF
reverse recovery time when switched from IF= 10 mA to
− 4ns
IR= 60 mA; RL= 100 Ω;
measured at IR= 1 mA; see Fig.7
forward recovery voltage when switched from IF= 400 mA;
− 2.0 V
tr= 30 ns; see Fig.8
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
R
th j-tp
th j-a
thermal resistance from junction to tie-point lead length 10 mm 240 K/W
thermal resistance from junction to ambient lead length 10 mm; note 1 500 K/W
Note
1. Device mounted on a printed circuit-board without metallization pad.
1996 Sep 03 3
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