Philips 74LV126PW, 74LV126DB, 74LV126D Datasheet
INTEGRATED CIRCUITS
74LV126
Quad buffer/line driver (3-State)
Product specification
Supersedes data of 1997 Feb 03
IC24 Data Handbook
1998 Apr 28
Philips Semiconductors Product specification
74L V126Quad buffer/line driver (3-State)
FEA TURES
• Wide operating voltage: 1.0 to 5.5 V
• Optimized for low voltage applications: 1.0 to 3.6 V
• Accepts TTL input levels between V
• Typical V
T
amb
• Typical V
T
amb
(output ground bounce) < 0.8 V at V
OLP
= 25°C
(output VOH undershoot) > 2 V at V
OHV
= 25°C
= 2.7 V and V
CC
CC
CC
CC
= 3.3 V,
= 3.3 V,
• Output capability: bus driver
• I
category: MSI
CC
QUICK REFERENCE DATA
GND = 0 V; T
= 25°C; tr = t
amb
SYMBOL
t
PHL/tPLH
C
I
C
PD
NOTE:
is used to determine the dynamic power dissipation (PD in µW)
1. C
PD
P
= CPD × V
D
f
= input frequency in MHz; CL = output load capacitance in pF;
i
= output frequency in MHz; VCC = supply voltage in V;
f
o
× V
(C
L
2
× fi (CL × V
CC
2
× fo) = sum of the outputs.
CC
≤ 2.5 ns
f
PARAMETER CONDITIONS TYPICAL UNIT
Propagation delay
nA to nY
Input capacitance 3.5 pF
Power dissipation capacitance per buffer
2
× fo) where:
CC
= 3.6 V
DESCRIPTION
The 74LV126 is a low-voltage Si-gate CMOS device that is pin and
function compatible with 74HC/HCT126.
The 74LV126 consists of four non-inverting buffers/line drivers with
3-state outputs. The 3-state outputs (nY) are controlled by the output
enable input (nOE). A LOW at nOE causes the outputs to assume a
high impedance OFF-state.
CL = 15 pF;
VCC = 3.3 V
VCC = 3.3 V;
VI = GND to V
CC
1
9 ns
23 pF
ORDERING INFORMATION
PACKAGES TEMPERATURE RANGE OUTSIDE NORTH AMERICA NORTH AMERICA PKG. DWG. #
14-Pin Plastic DIL –40°C to +125°C 74LV126 N 74LV126 N SOT27-1
14-Pin Plastic SO –40°C to +125°C 74LV126 D 74LV126 D SOT108-1
14-Pin Plastic SSOP Type II –40°C to +125°C 74LV126 DB 74LV126 DB SOT337-1
14-Pin Plastic TSSOP Type I –40°C to +125°C 74LV126 PW 74LV126PW DH SOT402-1
PIN DESCRIPTION
PIN
NUMBER
1, 4, 10, 13 1OE – 4OE Output enable inputs (active HIGH)
2, 5, 9, 12 1A – 4A Data inputs
3, 6, 8, 11 1Y – 4Y Data outputs
7 GND Ground (0 V)
14 V
SYMBOL FUNCTION
CC
Positive supply voltage
FUNCTION TABLE
INPUTS OUTPUTS
nOE nA nY
H L L
H H H
L X Z
NOTES:
H = HIGH voltage level
L = LOW voltage level
X = don’t care
Z = high impedance OFF-state
1998 Apr 28 853–1902 19290
2
Philips Semiconductors Product specification
Quad buffer/line driver (3-State)
PIN CONFIGURATION
1
1OE
2
1A
3
1Y
4
2OE
5
2A
6
2Y
GND
7
LOGIC SYMBOL (IEEE/IEC)
2
1
EN1
5
4
9
10
12
13
1
(a) (b)
3
6
8
11
14
V
CC
4OE
13
4A
12
11
4Y
3OE
10
9
3A
8
3Y
SV00483
2
1
EN
5
4
EN
9
10
EN
12
13
EN
11
SV00485
74LV126
LOGIC SYMBOL
3
1A
1OE
2A
2OE
3A
3OE
4A
4OE
1Y
2Y
3Y
4Y
SV00484
6
8
11
nYnA
SV00486
2
1
5
4
9
10
12
13
LOGIC DIAGRAM (ONE GATE)
3
nOE
6
8
RECOMMENDED OPERA TING CONDITIONS
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT
V
V
V
T
amb
tr, t
NOTE:
1. The LV is guaranteed to function down to V
1998 Apr 28
DC supply voltage See Note 1 1.0 3.3 5.5 V
CC
Input voltage 0 – V
I
Output voltage 0 – V
O
Operating ambient temperature range in free air
Input rise and fall times
f
CC
See DC and AC
characteristics
VCC = 1.0V to 2.0V
VCC = 2.0V to 2.7V
VCC = 2.7V to 3.6V
VCC = 3.6V to 5.5V
= 1.0V (input levels GND or VCC); DC characteristics are guaranteed from VCC = 1.2V to VCC = 5.5V.
–40
–40
–
–
–
–
–
–
–
–
3
CC
CC
+85
+125
500
200
100
50
ns/V
V
V
°C
Philips Semiconductors Product specification
V
V
V
V
voltage all out uts
V
voltage; BUS driver
V
voltage all out uts
Quad buffer/line driver (3-State)
ABSOLUTE MAXIMUM RATINGS
1, 2
74LV126
In accordance with the Absolute Maximum Rating System (IEC 134).
Voltages are referenced to GND (ground = 0 V).
SYMBOL
V
CC
"I
IK
"I
OK
"I
O
"I
GND
"I
CC
T
stg
P
TOT
DC supply voltage –0.5 to +7.0 V
DC input diode current VI < –0.5 or VI > VCC + 0.5V 20 mA
DC output diode current VO < –0.5 or VO > VCC + 0.5V 50 mA
DC output source or sink current
– bus driver outputs
DC VCC or GND current for types with
,
– bus driver outputs 70
Storage temperature range –65 to +150 °C
Power dissipation per package
– plastic DIL
– plastic mini-pack (SO)
– plastic shrink mini-pack (SSOP and TSSOP)
PARAMETER CONDITIONS RATING UNIT
–0.5V < VO < VCC + 0.5V
35
mA
mA
for temperature range: –40 to +125°C
above +70°C derate linearly with 12 mW/K
above +70°C derate linearly with 8 mW/K
above +60°C derate linearly with 5.5 mW/K
750
500
400
mW
NOTES:
1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the
device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability .
2. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
DC ELECTRICAL CHARACTERISTICS
Over recommended operating conditions, voltages are referenced to GND (ground = 0 V)
SYMBOL P ARAMETER TEST CONDITIONS
MIN TYP
VCC = 1.2 V 0.9 0.9
HIGH level Input
IH
voltage
LOW level Input
IL
voltage
OH
HIGH level output
;
V
HIGH level output
OH
V
OL
;
outputs
LOW level output
;
VCC = 2.0 V 1.4 1.4
VCC = 2.7 to 3.6 V 2.0 2.0
VCC = 4.5 to 5.5 V 0.7<V
CC
VCC = 1.2 V 0.3 0.3
VCC = 2.0 V 0.6 0.6
VCC = 2.7 to 3.6 V 0.8 0.8
VCC = 4.5 to 5.5 0.3<V
VCC = 1.2 V; VI = VIH or V
VCC = 2.0 V; VI = VIH or V
VCC = 2.7 V; VI = VIH or V
p
VCC = 3.0 V; VI = VIH or V
VCC = 4.5 V; VI = VIH or V
VCC = 3.0 V; VI = VIH or V
VCC = 4.5 V; VI = VIH or V
VCC = 1.2 V; VI = VIH or V
VCC = 2.0 V; VI = VIH or V
VCC = 2.7 V; VI = VIH or V
p
VCC = 3.0 V; VI = VIH or V
VCC = 4.5 V; VI = VIH or V
–IO = 100µA 1.2
IL;
–IO = 100µA 1.8 2.0 1.8
IL;
–IO = 100µA 2.5 2.7 2.5
IL;
–IO = 100µA 2.8 3.0 2.8
IL;
–IO = 100µA 4.3 4.5 4.3
IL;
–IO = 8mA 2.40 2.82 2.20
IL;
–IO = 16mA 3.60 4.20 3.50
IL;
IO = 100µA 0
IL;
IO = 100µA 0 0.2 0.2
IL;
IO = 100µA 0 0.2 0.2
IL;
IO = 100µA 0 0.2 0.2
IL;
IO = 100µA 0 0.2 0.2
IL;
LIMITS
-40°C to +85°C -40°C to +125°C
1
MAX MIN MAX
0.7<V
CC
CC
0.3<V
UNIT
CC
V
V
1998 Apr 28
4
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