Philips 74LV125DB, 74LV125D, 74LV125PW, 74LV125N Datasheet

INTEGRATED CIRCUITS

74LV125

Quad buffer/line driver (3-State)

Product specification Supersedes data of 1997 Feb 03 IC24 Data Handbook

 

1998 Apr 28

Philips Semiconductors Product specification

Quad buffer/line driver (3-State)

FEA TURES

•Wide operating voltage: 1.0 to 5.5 V

•Optimized for Low Voltage applications: 1.0 to 3.6 V

•Accepts TTL input levels between V

•Typical V

amb

•Typical V

amb

(output ground bounce) < 0.8 V at VCC = 3.3 V,

OLP

= 25°C.

(output VOH undershoot) > 2 V at VCC = 3.3 V,

OHV

= 25°C.

•Output capability: bus driver

•I

category: MSI

QUICK REFERENCE DATA

GND = 0 V; T

SYMBOL

NOTE:

is used to determine the dynamic power dissipation (PD in µW)

1. C

= CPD × V

= input frequency in MHz; CL = output load capacitance in pF;

= output frequency in MHz; VCC = supply voltage in V;

 (C

= 25°C; tr = tf ≤ 2.5 ns

amb

PHL/tPLH

× fi  (CL × V

× V

× fo) = sum of the outputs.

Propagation delay nA to nY

Input capacitance 3.5 pF Power dissipation capacitance per buffer

= 2.7 V and VCC = 3.6 V

PARAMETER CONDITIONS TYPICAL UNIT

× fo) where:

74L V125

DESCRIPTION

The 74LV125 is a low-voltage Si-gate CMOS device and is pin and function compatible with 74HC/HCT125.

The 74LV125 consists of four non-inverting buffers/line drivers with 3-state outputs. The 3-state outputs (nY) are controlled by the output enable input (nOE high impedance OFF-state.

CL = 15 pF; VCC = 3.3 V

VCC = 3.3 V; VI = GND to V

). A HIGH at nOE causes the outputs to assume a

9 ns

22 pF

ORDERING INFORMATION

PACKAGES TEMPERATURE RANGE OUTSIDE NORTH AMERICA NORTH AMERICA PKG. DWG. #

14-Pin Plastic DIL –40°C to +125°C 74LV125 N 74LV125 N SOT27-1 14-Pin Plastic SO –40°C to +125°C 74LV125 D 74LV125 D SOT108-1 14-Pin Plastic SSOP Type II –40°C to +125°C 74LV125 DB 74LV125 DB SOT337-1 14-Pin Plastic TSSOP Type I –40°C to +125°C 74LV125 PW 74LV125PW DH SOT402-1

PIN DESCRIPTION

NUMBER

1, 4, 10, 13 1OE – 4OE Data enable inputs (active LOW) 2, 5, 9, 12 1A – 4A Data inputs 3, 6, 8, 11 1Y – 4Y Data Outputs 7 GND Ground (0 V) 14 V

SYMBOL NAME AND FUNCTION

Positive supply voltage

FUNCTION TABLE

INPUTS OUTPUT

nOE nA nY

L L L L H H

H X Z

NOTES:

H = HIGH voltage level L = LOW voltage level X = don’t care Z = high impedance OFF-state

1998 Apr 28 853–1901 19290

Philips Semiconductors Product specification

74LV125Quad buffer/line driver (3-State)

PIN CONFIGURATION

1OE

2OE

GND

LOGIC SYMBOL

1OE

2OE

SV00455

4OE

3OE

LOGIC SYMBOL (IEEE/IEC)

EN1

SV00457

3OE

4OE

SV00456

RECOMMENDED OPERA TING CONDITIONS

SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT

amb

tr, t

NOTE:

1. The LV is guaranteed to function down to V

DC supply voltage See Note 1 1.0 3.3 5.5 V

Input voltage 0 – V

Output voltage 0 – V

Operating ambient temperature range in free air

Input rise and fall times

See DC and AC

characteristics

VCC = 1.0V to 2.0V VCC = 2.0V to 2.7V VCC = 2.7V to 3.6V V

= 3.6V to 5.5V

= 1.0V (input levels GND or VCC); DC characteristics are guaranteed from VCC = 1.2V to VCC = 5.5V.

–40 –40

– – – –

CC CC

+85

+125

500 200 100

ns/V

V V

°C

1998 Apr 28

Philips Semiconductors Product specification

voltage all out uts

voltage; BUS driver

voltage all out uts

voltage; BUS driver

74LV125Quad buffer/line driver (3-State)

ABSOLUTE MAXIMUM RATINGS

1, 2

In accordance with the Absolute Maximum Rating System (IEC 134). Voltages are referenced to GND (ground = 0 V).

SYMBOL

GND

stg

TOT

DC supply voltage –0.5 to +7.0 V DC input diode current VI < –0.5 or VI > VCC + 0.5V 20 mA DC output diode current VO < –0.5 or VO > VCC + 0.5V 50 mA DC output source or sink current

– bus driver outputs DC VCC or GND current for types with

– bus driver outputs Storage temperature range –65 to +150 °C

Power dissipation per package – plastic DIL – plastic mini-pack (SO) – plastic shrink mini-pack (SSOP and TSSOP)

PARAMETER CONDITIONS RATING UNIT

–0.5V < VO < VCC + 0.5V

for temperature range: –40 to +125°C above +70°C derate linearly with 12 mW/K above +70°C derate linearly with 8 mW/K above +60°C derate linearly with 5.5 mW/K

750 500 400

NOTES:

1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability .

2. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.

DC ELECTRICAL CHARACTERISTICS

Over recommended operating conditions, voltages are referenced to GND (ground = 0 V)

LIMITS

SYMBOL P ARAMETER TEST CONDITIONS

VCC = 1.2 V 0.9 0.9

HIGH level Input voltage

VCC = 2.0 V 1.4 1.4 VCC = 2.7 to 3.6 V 2.0 2.0 VCC = 4.5 to 5.5 V 0.7<V VCC = 1.2 V 0.3 0.3

LOW level Input voltage

VCC = 2.0 V 0.6 0.6 VCC = 2.7 to 3.6 V 0.8 0.8 VCC = 4.5 to 5.5 0.3<V VCC = 1.2 V; VI = VIH or V VCC = 2.0 V; VI = VIH or V

HIGH level output

;

VCC = 2.7 V; VI = VIH or V

VCC = 3.0 V; VI = VIH or V VCC = 4.5 V; VI = VIH or V

HIGH level output

;

outputs

VCC = 3.0 V; VI = VIH or V VCC = 4.5 V; VI = VIH or V

VCC = 1.2 V; VI = VIH or V VCC = 2.0 V; VI = VIH or V

LOW level output

;

VCC = 2.7 V; VI = VIH or V

VCC = 3.0 V; VI = VIH or V VCC = 4.5 V; VI = VIH or V

LOW level output

;

outputs

VCC = 3.0 V; VI = VIH or V VCC = 4.5 V; VI = VIH or V

–IO = 100µA 1.2

IL;

–IO = 100µA 1.8 2.0 1.8

IL;

–IO = 100µA 2.5 2.7 2.5

IL;

–IO = 100µA 2.8 3.0 2.8

IL;

–IO = 100µA 4.3 4.5 4.3

IL;

–IO = 8mA 2.40 2.82 2.20

IL;

–IO = 16mA 3.60 4.20 3.50

IL;

IO = 100µA 0

IL;

IO = 100µA 0 0.2 0.2

IL;

IO = 100µA 0 0.2 0.2

IL;

IO = 100µA 0 0.2 0.2

IL;

IO = 100µA 0 0.2 0.2

IL;

IO = 8mA 0.20 0.40 0.50

IL;

IO = 16mA 0.35 0.55 0.65

IL;

-40°C to +85°C -40°C to +125°C

MIN TYP

MAX MIN MAX

0.7<V

0.3<V

UNIT

1998 Apr 28

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