Philips 74HCT4016N, 74HCT4016D, 74HC4016U, 74HC4016PW, 74HC4016N Datasheet

DATA SH EET

Product specification
File under Integrated Circuits, IC06

December 1990

INTEGRATED CIRCUITS

74HC/HCT4016

Quad bilateral switches

For a complete data sheet, please also download:

•The IC06 74HC/HCT/HCU/HCMOS Logic Family Specifications

•The IC06 74HC/HCT/HCU/HCMOS Logic Package Information

•The IC06 74HC/HCT/HCU/HCMOS Logic Package Outlines

December 1990 2

Philips Semiconductors Product specification

Quad bilateral switches 74HC/HCT4016

FEATURES

• Low “ON” resistance:
160 Ω (typ.) at VCC= 4.5 V
120 Ω (typ.) at VCC= 6.0 V
80 Ω (typ.) at VCC= 9.0 V

• Individual switch controls

• Typical “break before make” built in

• Output capability: non-standard

• ICC category: SSI

GENERAL DESCRIPTION

The 74HC/HCT4016 are high-speed Si-gate CMOS
devices and are pin compatible with the “4016” of the

“4000B” series. They are specified in compliance with
JEDEC standard no. 7A.

The 74HC/HCT4016 have four independent analog
switches (transmission gates).
Each switch has two input/output terminals (Y

n,Zn

) and an
active HIGH enable input (En). When Enis connected to
VCC, a low bidirectional path between Ynand Znis
established (ON condition). When Enis connected to
ground (GND), the switch is disabled and a high
impedance between Ynand Znis established (OFF
condition).

Current through a switch will not cause additional
VCCcurrent provided the voltage at the terminals of the
switch is maintained within the supply voltage range;
VCC>> (VY,VZ) >> GND. Inputs Ynand Znare electrically
equivalent terminals.

QUICK REFERENCE DATA

GND = 0 V; T

amb

= 25 °C; tr= tf= 6 ns

Notes

1. C

PD

is used to determine the dynamic power dissipation (PDin µW):

PD= CPD× V

CC

2

× fi+∑{(CL+CS)×V

CC

2

× fo} where:
fi= input frequency in MHz
fo= output frequency in MHz
∑ {(CL+ CS) × V

CC

2

× fo} = sum of outputs

CL= output load capacitance in pF
CS= max. switch capacitance in pF

VCC= supply voltage in V

2. For HC the condition is VI= GND to V

CC

For HCT the condition is VI= GND to VCC− 1.5 V

ORDERING INFORMATION

See

“74HC/HCT/HCU/HCMOS Logic Package Information”

.

SYMBOL PARAMETER CONDITIONS

TYPICAL

UNIT

HC HCT

t

PZH

/ t

PZL

turn “ON” time Ento V

OS

CL= 15 pF; RL=1 kΩ;
VCC= 5 V

16 17 ns

t

PHZ

/ t

PLZ

turn “OFF” time Ento V

OS

14 20 ns

C

I

input capacitance 3.5 3.5 pF

C

PD

power dissipation capacitance per switch notes 1 and 2 12 12 pF

C

S

max. switch capacitance 5 5 pF

December 1990 3

Philips Semiconductors Product specification

Quad bilateral switches 74HC/HCT4016

PIN DESCRIPTION

PIN NO. SYMBOL NAME AND FUNCTION

1, 4, 8, 11 Y

0

to Y

3

independent inputs/outputs
7 GND ground (0 V)
2, 3, 9, 10 Z

0

to Z

3

independent inputs/outputs
13, 5, 6, 12 E

0

to E

3

enable inputs (active HIGH)
14 V

CC

positive supply voltage

Fig.1 Pin configuration. Fig.2 Logic symbol. Fig.3 IEC logic symbol.

(a) (b)

December 1990 4

Philips Semiconductors Product specification

Quad bilateral switches 74HC/HCT4016

FUNCTION TABLE

Notes

1. H = HIGH voltage level
L = LOW voltage level

INPUT

E

n

CHANNEL

IMPEDANCE

L
H

high

low

Fig.4 Functional diagram.

APPLICATIONS

• Signal gating

• Modulation

• Demodulation

• Chopper

Fig.5 Schematic diagram (one switch).

December 1990 5

Philips Semiconductors Product specification

Quad bilateral switches 74HC/HCT4016

RATINGS

Limiting values in accordance with the Absolute Maximum System (IEC 134)
Voltages are referenced to GND (ground = 0 V)

RECOMMENDED OPERATING CONDITIONS

SYMBOL PARAMETER MIN. MAX. UNIT CONDITIONS

V

CC

DC supply voltage −0.5 +11.0 V

±I

IK

DC digital input diode current 20 mA for VI<−0.5 V or VI> VCC+ 0.5 V

±I

SK

DC switch diode current 20 mA for VS<−0.5 V or VS> VCC+ 0.5 V

±I

S

DC switch current 25 mA for −0.5 V < VS< VCC+ 0.5 V

±I

CC

; ±I

GND

DC VCCor GND current 50 mA

T

stg

storage temperature range −65 +150 °C

P

tot

power dissipation per package for temperature range: −40 to +125 °C

74HC/HCT
plastic DIL 750 mW above +70 °C: derate linearly with 12 mW/K
plastic mini-pack (SO) 500 mW above +70 °C: derate linearly with 8 mW/K

P

S

power dissipation per switch 100 mW

SYMBOL PARAMETER

74HC 74HCT

UNIT CONDITIONS

min. typ. max. min. typ. max.

V

CC

DC supply voltage 2.0 5.0 10.0 4.5 5.0 5.5 V

V

I

DC input voltage range GND V

CC

GND V

CC

V

V

S

DC switch voltage range GND V

CC

GND V

CC

V

T

amb

operating ambient temperature range −40 +85 −40 +85 °C

see DC and AC
CHARACTERIS­TICS

T

amb

operating ambient temperature range −40 +125 −40 +125 °C

1000 V

CC

= 2.0 V

t

r,tf

input rise and fall times 6.0 500

400
250

6.0 500 ns VCC= 4.5 V
VCC= 6.0 V
VCC= 10.0 V