Philips 74ABT620PW, 74ABT620N, 74ABT620DB, 74ABT620D Datasheet

INTEGRATED CIRCUITS

74ABT620

Octal transceiver with dual enable,
inverting (3-State)

Product specification 1993 Jun 21
IC23 Data Handbook

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Philips Semiconductors Product specification

Octal transceiver with dual enable, inverting
(3-State)

FEA TURES

•Octal bidirectional bus interface

•3-State buffers

•Power-up 3-State

•Live insertion/extraction permitted

•Output capability: +64mA/–32mA

•Latch-up protection exceeds 500mA per Jedec Std 17

•ESD protection exceeds 2000 V per MIL STD 883 Method 3015

and 200 V per Machine Model

QUICK REFERENCE DATA

SYMBOL PARAMETER

t

PLH

t

PHL

C

C
I

CCZ

IN

I/O

Propagation delay
An to Bn or Bn to An

Input capacitance
OEAB, OEBA

CL = 50pF; VCC = 5V 3.1 ns

VI = 0V or V

I/O capacitance Outputs disabled; V
Total supply current Outputs disabled; VCC = 5.5V 50 µA

DESCRIPTION

The 74ABT620 high-performance BiCMOS device combines low
static and dynamic power dissipation with high speed and high
output drive.

The 74ABT620 device is an octal transceiver featuring inverting
3-State bus compatible outputs in both send and receive directions.
The 74ABT620 is designed for asynchronous two-way
communication between data buses. The control function
implementation allows for maximum flexibility in timing. This device
allows data transmission from the A bus to the B bus or from the B
bus to the A bus, depending upon the logic levels at the Enable
inputs (OEBA
the device so that the buses are effectively isolated.

CONDITIONS
= 25°C; GND = 0V

T

amb

CC

O

74ABT620

and OEAB). The Enable inputs can be used to disable

TYPICAL UNIT

4 pF

= 0V or V

CC

7 pF

ORDERING INFORMATION

PACKAGES TEMPERATURE RANGE OUTSIDE NORTH AMERICA NORTH AMERICA DWG NUMBER

20-Pin Plastic DIP –40°C to +85°C 74ABT620 N 74ABT620 N SOT146-1
20-Pin plastic SO –40°C to +85°C 74ABT620 D 74ABT620 D SOT163-1
20-Pin Plastic SSOP Type II –40°C to +85°C 74ABT620 DB 74ABT620 DB SOT339-1
20-Pin Plastic TSSOP Type I –40°C to +85°C 74ABT620 PW 74ABT620PW DH SOT360-1

PIN CONFIGURATION

1

OEAB

2

A0

3

A1

4

A2

5

A3

6

A4

7

A5

8

A6

9

A7

10 11

GND

20

V

CC

19

OEBA

18

B0

17

B1

16

B2

15

B3

14

B4

13

B5

12

B6
B7

PIN DESCRIPTION

PIN NUMBER SYMBOL NAME AND FUNCTION

1 OEAB

2, 3, 4, 5,

6, 7, 8, 9

18, 17, 16, 15,

14, 13, 12, 11

A0 – A7 Data inputs/outputs (A side)

B0 – B7 Data inputs/outputs (B side)

19 OEBA

10 GND Ground (0V)
20 V

Output enable input, A side to B side
(active-High)

Output enable input, B side to A side
(active-Low)

Positive supply voltage

CC

SA00189

1993 Jun 21 853–161 1 10081

2

Philips Semiconductors Product specification

Octal transceiver with dual enable, inverting
(3-State)

LOGIC SYMBOL

OEAB

1

2

A0

3

A1

4

A2

5

A3

6

A4

7

A5

8

A6

9

A7

19

OEBA

18

B0

17

B1

16

B2

15

B3

14

B4

13

B5

12

B6

11

B7

SA00190

LOGIC SYMBOL (IEEE/IEC)

1

19

2

3

4

5

6

7

8

9

EN1

EN1

1

74ABT620

18

2

17

16

15

14

13

12

11

SA00191

FUNCTION TABLE

INPUTS INPUTS/OUTPUTS

OEBA OEAB An Bn

L L Bn Inputs
H H Inputs An
H L ZZ

Bn Inputs

L H

H =High voltage level
L =Low voltage level
Z =High impedance ”off” state

ABSOLUTE MAXIMUM RA TINGS

SYMBOL

V

V

I

CC

I

IK

V

I

OK

OUT

OUT

T

stg

DC supply voltage –0.5 to +7.0 V
DC input diode current VI < 0 –18 mA
DC input voltage

I

DC output diode current VO < 0 –50 mA
DC output voltage
DC output current output in Low state 128 mA
Storage temperature range –65 to 150 °C

NOTES:

1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the
device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability .

2. The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction
temperatures which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150°C.

3. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.

PARAMETER CONDITIONS RATING UNIT

3

3

or

Inputs A

1, 2

n

–1.2 to +7.0 V

output in Off or High state –0.5 to +5.5 V

1993 Jun 21

3

Philips Semiconductors Product specification

Octal transceiver with dual enable, inverting
(3-State)

RECOMMENDED OPERATING CONDITIONS

SYMBOL PARAMETER LIMITS UNIT

Min Max

V

CC

V
V
V
I

OH

I

OL

∆t/∆v Input transition rise or fall rate 0 5 ns/V

T

amb

DC ELECTRICAL CHARACTERISTICS

SYMBOL PARAMETER TEST CONDITIONS T

V

IK

V

OH

V

OL

I

I

OFF

I

PU/IPD

IIH + I

IIL + I

I

CEX

I

O

I

CCH

I

CCL

I

CCZ

∆I

CC

NOTES:

1. Not more than one output should be tested at a time, and the duration of the test should not exceed one second.

2. This is the increase in supply current for each input at 3.4V.

3. This parameter is valid for any V
transition time of up to 100µsec is permitted.

DC supply voltage 4.5 5.5 V
Input voltage 0 V

I

High-level input voltage 2.0 V

IH

Low-level Input voltage 0.8 V

IL

High-level output current –32 mA
Low-level output current 64 mA

Operating free-air temperature range –40 +85 °C

LIMITS

= +25°C

amb

Min Typ Max Min Max

Input clamp voltage VCC = 4.5V; IIK = –18mA –0.9 –1.2 –1.2 V

VCC = 4.5V; IOH = –3mA; VI = VIL or V

High-level output voltage VCC = 5.0V; IOH = –3mA; VI = VIL or V

VCC = 4.5V; IOH = –32mA; VI = VIL or V
Low-level output voltage VCC = 4.5V; IOL = 64mA; VI = VIL or V
Input leakage Control pins VCC = 5.5V; VI = GND or 5.5V ±0.01 ±1.0 ±1.0 µA

I

IH

IH

IH

IH

2.5 2.9 2.5 V

3.0 3.4 3.0 V

2.0 2.4 2.0 V

0.42 0.55 0.55 V

current Data pins VCC = 5.5V; VI = GND or 5.5V ±5 ±100 ±100 µA
Power-off leakage current VCC = 0.0V; VO or VI ≤ 4.5V ±5.0 ±100 ±100 µA
Power-up/down 3-State

output current
3-State output High current VCC = 5.5V; VO = 2.7V; VI = VIL or V

OZH

3-State output Low current VCC = 5.5V; VO = 0.5V; VI = VIL or V

OZL

3

Output High leakage current VCC = 5.5V; VO = 5.5V; VI = GND or V
Output current

1

Quiescent supply current VCC = 5.5V; Outputs Low, VI = GND or V

Additional supply current per
input pin

2

CC

VCC = 2.1V; VO = 0.5V; VI = GND or VCC;

and VOE = Don’t care

V

OE

IH

IH

CC

±5.0 ±50 ±50 µA

5.0 50 50 µA

–5.0 –50 –50 µA

5.0 50 50 µA
VCC = 5.5V; VO = 2.5V –50 –100 –180 –50 –180 mA
VCC = 5.5V; Outputs High, VI = GND or V

VCC = 5.5V; Outputs 3-State;

= GND or V

V

I

CC

VCC = 5.5V; one input at 3.4V,
other inputs at V

or GND

CC

CC

CC

50 250 250 µA
24 30 30 mA

50 250 250 µA

0.05 1.5 1.5 mA

between 0V and 2.1V , with a transition time of up to 10msec. From VCC = 2.1V to VCC = 5V ± 10% a

74ABT620

CC

T

= –40°C

amb

to +85°C

V

UNIT

1993 Jun 21

4