Philips 74abt541 DATASHEETS

INTEGRATED CIRCUITS
74ABT541
Octal buffer/line driver (3-State)
Product specification Supersedes data of 1996 Sep 10
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1998 Jan 16
Philips Semiconductors Product specification
74ABT541Octal buffer/line driver (3-State)

FEA TURES

Octal bus interface
Functions similar to the ’ABT241
ESD protection exceeds 2000 V per MIL STD 883 Method 3015
and 200 V per Machine Model
Live insertion/extraction permitted
Provides ideal interface and increases fan-out of MOS
Microprocessors
Efficient pinout to facilitate PC board layout
3-State buffer outputs sink 64mA and source 32mA
Power-up 3-State
Latch-up protection exceeds 500mA per Jedec JC40.2 Std 17

QUICK REFERENCE DATA

SYMBOL PARAMETER
t
PLH
t
PHL
C
IN
C
OUT
I
CCZ

ORDERING INFORMATION

20-Pin Plastic DIP –40°C to +85°C 74ABT541 N 74ABT541 N SOT146-1 20-Pin plastic SO –40°C to +85°C 74ABT541 D 74ABT541 D SOT163-1 20-Pin Plastic SSOP Type II –40°C to +85°C 74ABT541 DB 74ABT541 DB SOT339-1 20-Pin Plastic TSSOP Type I –40°C to +85°C 74ABT541 PW 74ABT541PW DH SOT360-1
Propagation delay An to Yn
CL = 50pF; VCC = 5V 2.9 ns
Input capacitance VI = 0V or V Output capacitance Outputs disabled; VO = 0V or V Total supply current Outputs disabled; VCC = 5.5V 500 nA
PACKAGES TEMPERATURE RANGE OUTSIDE NORTH AMERICA NORTH AMERICA DWG NUMBER

DESCRIPTION

The 74ABT541 high-performance BiCMOS device combines low static and dynamic power dissipation with high speed and high output drive.
The 74ABT541 device is an octal buffer that is ideal for driving bus lines. The outputs are all capable of sinking 64mA and sourcing 32mA. The device features input and outputs on opposite sides of the package to facilitate printed circuit board layout.
CONDITIONS
T
= 25°C; GND = 0V
amb
CC
CC
TYPICAL UNIT
4 pF 7 pF

PIN CONFIGURATION

1
OE0
2
A0
3
A1
4
A2
5
A3
6
A4
7
A5
8
A6
9
A7
10 11
GND
1998 Jan 16 853-1458 18864
20 19 18 17 16 15 14 13 12
SA00202
V OE1 Y0 Y1 Y2 Y3 Y4 Y5 Y6 Y7
CC

LOGIC SYMBOL

2
OE OE
1
0
19
1
2
A0
3
A1
4
A2
5
A3
6
A4
7
A5
8
A6
9
A7
18
17
16
15
14
13
12
11
SA00203
Y0
Y1
Y2
Y3
Y4
Y5
Y6
Y7
Philips Semiconductors Product specification
74ABT541Octal buffer/line driver (3-State)

LOGIC SYMBOL (IEEE/IEC)

PIN DESCRIPTION

PIN NUMBER SYMBOL NAME AND FUNCTION
&
1
19
2 18 3
416 5 614
713 8
911
EN
17
15
12
SA00204
2, 3, 4, 5,
6, 7, 8, 9
18, 17, 16, 15,
14, 13, 12, 11
1, 19 OE0, OE1 Output enables
10 GND Ground (0V) 20 V

FUNCTION TABLE

INPUTS OUTPUTS
OE0 OE1 An Yn
L
L X H
L
L H X
A0 – A7 Data inputs
Y0 – Y7 Data outputs
CC
L H X X
Positive supply voltage
L H Z Z
H =High voltage level L =Low voltage level X = Don’t care Z =High impedance ”off” state

ABSOLUTE MAXIMUM RATINGS

SYMBOL
V
CC
I
IK
V
I
I
OK
V
OUT
I
OUT
T
stg
DC supply voltage –0.5 to +7.0 V DC input diode current VI < 0 –18 mA DC input voltage DC output diode current VO < 0 –50 mA DC output voltage DC output current output in Low state 128 mA Storage temperature range –65 to 150 °C
PARAMETER CONDITIONS RATING UNIT
3
3
1, 2
–1.2 to +7.0 V
output in Off or High state –0.5 to +5.5 V
NOTES:
1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability .
2. The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction temperatures which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150°C.
3. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
1998 Jan 16
3
Philips Semiconductors Product specification
74ABT541Octal buffer/line driver (3-State)

RECOMMENDED OPERATING CONDITIONS

SYMBOL PARAMETER LIMITS UNIT
Min Max
V
CC
V V V I
OH
I
OL
t/v Input transition rise or fall rate 0 5 ns/V
T
amb

DC ELECTRICAL CHARACTERISTICS

SYMBOL PARAMETER TEST CONDITIONS T
V
IK
V
OH
V
OL
I
I
OFF
IPU/I
I
OZH
I
OZL
I
CEX
I
O
I
CCH
I
CCL
I
CCZ
I
CC
DC supply voltage 4.5 5.5 V Input voltage 0 V
I
High-level input voltage 2.0 V
IH
Low-level Input voltage 0.8 V
IL
CC
High-level output current –32 mA Low-level output current 64 mA
Operating free-air temperature range –40 +85 °C
LIMITS
T
amb
= +25°C
amb
to +85°C
Min Typ Max Min Max
Input clamp voltage VCC = 4.5V; IIK = –18mA –0.9 –1.2 –1.2 V
VCC = 4.5V; IOH = –3mA; VI = VIL or V
High-level output voltage VCC = 5.0V; IOH = –3mA; VI = VIL or V
VCC = 4.5V; IOH = –32mA; VI = VIL or V Low-level output voltage VCC = 4.5V; IOL = 64mA; VI = VIL or V Input leakage current VCC = 5.5V; VI = GND or 5.5V ±0.01 ±1.0 ±1.0 µA
I
IH IH
IH
IH
2.5 2.9 2.5 V
3.0 3.4 3.0 V
2.0 2.4 2.0 V
0.42 0.55 0.55 V
Power-off leakage current VCC = 0.0V; VI or VO 4.5V ±5.0 ±100 ±100 µA Power-up/down 3-state
PD
output current
3
3-State output High current VCC = 5.5V; VO = 2.7V; VI = VIL or V 3-State output Low current VCC = 5.5V; VO = 0.5V; VI = VIL or V Output High leakage current VCC = 5.5V; VO = 5.5V; VI = GND or V Output current
1
Quiescent supply current VCC = 5.5V; Outputs Low, VI = GND or V
Additional supply current per input pin
2
VCC = 2.0V; VO = 0.5V; VI = GND or VCC;
VOE = Don’t care
IH IH
CC
±5.0 ±50 ±50 µA
5.0 50 50 µA
–5.0 –50 –50 µA
5.0 50 50 µA VCC = 5.5V; VO = 2.5V –40 –100 –180 –40 –180 mA VCC = 5.5V; Outputs High, VI = GND or V
VCC = 5.5V; Outputs 3-State; VI = GND or V
CC
Outputs enabled, one input at 3.4V , other inputs at VCC or GND; VCC = 5.5V
Outputs 3-State, one data input at 3.4V , other inputs at VCC or GND; VCC = 5.5V
Outputs 3-State, one enable input at 3.4V , other inputs at VCC or GND; VCC = 5.5V
CC
CC
0.5 250 250 µA
24 30 30 mA
0.5 250 250 µA
0.5 1.5 1.5 mA
0.5 50 50 µA
0.5 1.5 1.5 mA
= –40°C
V
UNIT
NOTES:
1. Not more than one output should be tested at a time, and the duration of the test should not exceed one second.
2. This is the increase in supply current for each input at 3.4V.
3. This parameter is valid for any VCC between 0V and 2.1V with a transition time of up to 10msec. For VCC = 2.1V to VCC = 5V  10%, a transition time of up to 100µsec is permitted.
1998 Jan 16
4
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