INTEGRATED CIRCUITS
74ABT541
Octal buffer/line driver (3-State)
Product specification
Supersedes data of 1996 Sep 10
IC23 Data Handbook
1998 Jan 16
Philips Semiconductors Product specification
74ABT541Octal buffer/line driver (3-State)
FEA TURES
•Octal bus interface
•Functions similar to the ’ABT241
•ESD protection exceeds 2000 V per MIL STD 883 Method 3015
and 200 V per Machine Model
•Live insertion/extraction permitted
•Provides ideal interface and increases fan-out of MOS
Microprocessors
•Efficient pinout to facilitate PC board layout
•3-State buffer outputs sink 64mA and source 32mA
•Power-up 3-State
•Latch-up protection exceeds 500mA per Jedec JC40.2 Std 17
QUICK REFERENCE DATA
SYMBOL PARAMETER
t
PLH
t
PHL
C
IN
C
OUT
I
CCZ
ORDERING INFORMATION
20-Pin Plastic DIP –40°C to +85°C 74ABT541 N 74ABT541 N SOT146-1
20-Pin plastic SO –40°C to +85°C 74ABT541 D 74ABT541 D SOT163-1
20-Pin Plastic SSOP Type II –40°C to +85°C 74ABT541 DB 74ABT541 DB SOT339-1
20-Pin Plastic TSSOP Type I –40°C to +85°C 74ABT541 PW 74ABT541PW DH SOT360-1
Propagation delay
An to Yn
CL = 50pF; VCC = 5V 2.9 ns
Input capacitance VI = 0V or V
Output capacitance Outputs disabled; VO = 0V or V
Total supply current Outputs disabled; VCC = 5.5V 500 nA
PACKAGES TEMPERATURE RANGE OUTSIDE NORTH AMERICA NORTH AMERICA DWG NUMBER
DESCRIPTION
The 74ABT541 high-performance BiCMOS device combines low
static and dynamic power dissipation with high speed and high
output drive.
The 74ABT541 device is an octal buffer that is ideal for driving bus
lines. The outputs are all capable of sinking 64mA and sourcing
32mA. The device features input and outputs on opposite sides of
the package to facilitate printed circuit board layout.
CONDITIONS
T
= 25°C; GND = 0V
amb
CC
CC
TYPICAL UNIT
4 pF
7 pF
PIN CONFIGURATION
1
OE0
2
A0
3
A1
4
A2
5
A3
6
A4
7
A5
8
A6
9
A7
10 11
GND
1998 Jan 16 853-1458 18864
20
19
18
17
16
15
14
13
12
SA00202
V
OE1
Y0
Y1
Y2
Y3
Y4
Y5
Y6
Y7
CC
LOGIC SYMBOL
2
OE
OE
1
0
19
1
2
A0
3
A1
4
A2
5
A3
6
A4
7
A5
8
A6
9
A7
18
17
16
15
14
13
12
11
SA00203
Y0
Y1
Y2
Y3
Y4
Y5
Y6
Y7
Philips Semiconductors Product specification
74ABT541Octal buffer/line driver (3-State)
LOGIC SYMBOL (IEEE/IEC)
PIN DESCRIPTION
PIN NUMBER SYMBOL NAME AND FUNCTION
&
1
19
2 18
3
416
5
614
713
8
911
EN
17
15
12
SA00204
2, 3, 4, 5,
6, 7, 8, 9
18, 17, 16, 15,
14, 13, 12, 11
1, 19 OE0, OE1 Output enables
10 GND Ground (0V)
20 V
FUNCTION TABLE
INPUTS OUTPUTS
OE0 OE1 An Yn
L
L
X
H
L
L
H
X
A0 – A7 Data inputs
Y0 – Y7 Data outputs
CC
L
H
X
X
Positive supply voltage
L
H
Z
Z
H =High voltage level
L =Low voltage level
X = Don’t care
Z =High impedance ”off” state
ABSOLUTE MAXIMUM RATINGS
SYMBOL
V
CC
I
IK
V
I
I
OK
V
OUT
I
OUT
T
stg
DC supply voltage –0.5 to +7.0 V
DC input diode current VI < 0 –18 mA
DC input voltage
DC output diode current VO < 0 –50 mA
DC output voltage
DC output current output in Low state 128 mA
Storage temperature range –65 to 150 °C
PARAMETER CONDITIONS RATING UNIT
3
3
1, 2
–1.2 to +7.0 V
output in Off or High state –0.5 to +5.5 V
NOTES:
1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the
device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability .
2. The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction
temperatures which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150°C.
3. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
1998 Jan 16
3
Philips Semiconductors Product specification
74ABT541Octal buffer/line driver (3-State)
RECOMMENDED OPERATING CONDITIONS
SYMBOL PARAMETER LIMITS UNIT
Min Max
V
CC
V
V
V
I
OH
I
OL
∆t/∆v Input transition rise or fall rate 0 5 ns/V
T
amb
DC ELECTRICAL CHARACTERISTICS
SYMBOL PARAMETER TEST CONDITIONS T
V
IK
V
OH
V
OL
I
I
OFF
IPU/I
I
OZH
I
OZL
I
CEX
I
O
I
CCH
I
CCL
I
CCZ
∆I
CC
DC supply voltage 4.5 5.5 V
Input voltage 0 V
I
High-level input voltage 2.0 V
IH
Low-level Input voltage 0.8 V
IL
CC
High-level output current –32 mA
Low-level output current 64 mA
Operating free-air temperature range –40 +85 °C
LIMITS
T
amb
= +25°C
amb
to +85°C
Min Typ Max Min Max
Input clamp voltage VCC = 4.5V; IIK = –18mA –0.9 –1.2 –1.2 V
VCC = 4.5V; IOH = –3mA; VI = VIL or V
High-level output voltage VCC = 5.0V; IOH = –3mA; VI = VIL or V
VCC = 4.5V; IOH = –32mA; VI = VIL or V
Low-level output voltage VCC = 4.5V; IOL = 64mA; VI = VIL or V
Input leakage current VCC = 5.5V; VI = GND or 5.5V ±0.01 ±1.0 ±1.0 µA
I
IH
IH
IH
IH
2.5 2.9 2.5 V
3.0 3.4 3.0 V
2.0 2.4 2.0 V
0.42 0.55 0.55 V
Power-off leakage current VCC = 0.0V; VI or VO ≤ 4.5V ±5.0 ±100 ±100 µA
Power-up/down 3-state
PD
output current
3
3-State output High current VCC = 5.5V; VO = 2.7V; VI = VIL or V
3-State output Low current VCC = 5.5V; VO = 0.5V; VI = VIL or V
Output High leakage current VCC = 5.5V; VO = 5.5V; VI = GND or V
Output current
1
Quiescent supply current VCC = 5.5V; Outputs Low, VI = GND or V
Additional supply current per
input pin
2
VCC = 2.0V; VO = 0.5V; VI = GND or VCC;
VOE = Don’t care
IH
IH
CC
±5.0 ±50 ±50 µA
5.0 50 50 µA
–5.0 –50 –50 µA
5.0 50 50 µA
VCC = 5.5V; VO = 2.5V –40 –100 –180 –40 –180 mA
VCC = 5.5V; Outputs High, VI = GND or V
VCC = 5.5V; Outputs 3-State;
VI = GND or V
CC
Outputs enabled, one input at 3.4V , other
inputs at VCC or GND; VCC = 5.5V
Outputs 3-State, one data input at 3.4V ,
other inputs at VCC or GND; VCC = 5.5V
Outputs 3-State, one enable input at 3.4V ,
other inputs at VCC or GND; VCC = 5.5V
CC
CC
0.5 250 250 µA
24 30 30 mA
0.5 250 250 µA
0.5 1.5 1.5 mA
0.5 50 50 µA
0.5 1.5 1.5 mA
= –40°C
V
UNIT
NOTES:
1. Not more than one output should be tested at a time, and the duration of the test should not exceed one second.
2. This is the increase in supply current for each input at 3.4V.
3. This parameter is valid for any VCC between 0V and 2.1V with a transition time of up to 10msec. For VCC = 2.1V to VCC = 5V 10%, a
transition time of up to 100µsec is permitted.
1998 Jan 16
4