Philips 2sk372 DATASHEETS
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK372
2SK372
For Audio Amplifier, Analog-Switch, Constant Current
and Impedance Converter Applications
· High breakdown voltage: V
· High input impedance: I
· Low R
DS (ON)
: R
DS (ON)
· Small package
Maximum Ratings
Characteristics Symbol Rating Unit
Gate-drain voltage V
Gate current IG 10 mA
Drain power dissipation PD 200 mW
Junction temperature T
Storage temperature range T
(Ta ==== 25°C)
Electrical Characteristics
= −40 V
GDS
= −1.0 nA (max) (VGS = −30 V)
GSS
= 20 Ω (typ.) (I
= 15 mA)
DSS
-40 V
GDS
j
stg
(Ta ==== 25°C)
-55~125 °C
125 °C
Unit: mm
JEDEC ―
JEITA ―
TOSHIBA 2-4E1C
Weight: 0.13 g (typ.)
Characteristics Symbol Test Condition Min Typ. Max Unit
Gate cut-off current I
Gate-drain breakdown voltage V
Drain current
Gate-source cut-off voltage V
Forward transfer admittance ïYfsï VDS = 10 V, VGS = 0, f = 1 kHz (Note 2) 25 60 ¾ mS
Input capacitance C
Reverse transfer capacitance C
Drain-source ON resistance R
Note 1: I
classification GR: 5.0~10.0 mA, BL: 8.0~16.0 mA, Y: 14.0~30.0 mA
DSS
Note 2: Concition of the typical value I
GSS
(BR) GDSVDS
I
DSS
(Note 1)
GS (OFF)
iss
rss
DS (ON)
DSS
VGS = -30 V, VDS = 0 ¾ ¾ -1.0 nA
= 0, IG = -100 mA -40 ¾ ¾ V
VDS = 10 V, VGS = 0, f = 1 MHz ¾ 75 ¾ pF
VDG = 10 V, ID = 0, f = 1 MHz ¾ 15 ¾ pF
= 10 V, VGS = 0 5.0 ¾ 30 mA
V
DS
VDS = 10 V, ID = 0.1 mA -0.3 ¾ -1.2 V
VDS = 10 mV, VGS = 0 (Note 2) ¾ 20 ¾ W
= 15 mA
1
2003-03-26
2SK372
2
2003-03-26
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