Philips 2sk170 DATASHEETS

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type

2SK170

2SK170

Low Noise Audio Amplifier Applications

• Recommended for first stages of EQ and M.C. head amplifiers.

• High |Y

• High breakdown voltage: V

• Low noise: En = 0.95 nV/Hz

(V

• High input impedance: I

Maximum Ratings

Gate-drain voltage V

Gate current IG 10 mA

Drain power dissipation PD 400 mW

Junction temperature T

Storage temperature range T

Electrical Characteristics

|: |Yfs| = 22 mS (typ.) (VDS = 10 V, VGS = 0, I

fs

= −40 V

GDS

1/2

(typ.)

= 10 V, ID = 1 mA, f = 1 kHz)

DS

= −1 nA (max) (VGS = −30 V)

GSS

(Ta ==== 25°C)

Characteristics Symbol Rating Unit

GDS

j

stg

(Ta ==== 25°C)

−40 V

125 °C

−55~125 °C

DSS

= 3 mA)

Unit: mm

JEDEC TC-92

JEITA SC-43

TOSHIBA 2-5F1D

Weight: 0.21 g (typ.)

Characteristics Symbol Test Condition Min Typ. Max Unit

Gate cut-off current I

Gate-drain breakdown voltage V

Drain current

Gate-source cut-off voltage V

Forward transfer admittance Y

Input capacitance C

Reverse transfer capacitance C

Noise figure

Note: I

classification GR: 2.6~6.5 mA, BL: 6.0~12 mA, V: 10~20 mA

DSS

GSS

(BR) GDS

I

DSS

GS (OFF)

fs

iss

rss

NF (1)

NF (2)

VGS = −30 V, VDS = 0   −1.0 nA

VDS = 0, IG = −100 µA −40   V

(Note)

 V

VDS = 10 V, VGS = 0, f = 1 MHz  30  pF

VDG = 10 V, ID = 0, f = 1 MHz  6  pF

= 10 V, VGS = 0 2.6  20 mA

V

DS

VDS = 10 V, ID = 0.1 µA −0.2  −1.5 V

= 10 V, VGS = 0, f = 1 kHz  22  mS

DS

= 10 V, ID = 1.0 mA, RG = 1 kΩ,

V

DS

f = 1 kHz

= 10 V, ID = 1.0 mA, RG = 1 kΩ,

V

DS

f = 1 kHz

 1.0 10

 0.5 2

dB

1

2003-03-25

2SK170

2

2003-03-25