Philips 2sk170 DATASHEETS
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK170
2SK170
Low Noise Audio Amplifier Applications
• Recommended for first stages of EQ and M.C. head amplifiers.
• High |Y
• High breakdown voltage: V
• Low noise: En = 0.95 nV/Hz
(V
• High input impedance: I
Maximum Ratings
Gate-drain voltage V
Gate current IG 10 mA
Drain power dissipation PD 400 mW
Junction temperature T
Storage temperature range T
Electrical Characteristics
|: |Yfs| = 22 mS (typ.) (VDS = 10 V, VGS = 0, I
fs
= −40 V
GDS
1/2
(typ.)
= 10 V, ID = 1 mA, f = 1 kHz)
DS
= −1 nA (max) (VGS = −30 V)
GSS
(Ta ==== 25°C)
Characteristics Symbol Rating Unit
GDS
j
stg
(Ta ==== 25°C)
−40 V
125 °C
−55~125 °C
DSS
= 3 mA)
Unit: mm
JEDEC TC-92
JEITA SC-43
TOSHIBA 2-5F1D
Weight: 0.21 g (typ.)
Characteristics Symbol Test Condition Min Typ. Max Unit
Gate cut-off current I
Gate-drain breakdown voltage V
Drain current
Gate-source cut-off voltage V
Forward transfer admittance Y
Input capacitance C
Reverse transfer capacitance C
Noise figure
Note: I
classification GR: 2.6~6.5 mA, BL: 6.0~12 mA, V: 10~20 mA
DSS
GSS
(BR) GDS
I
DSS
GS (OFF)
fs
iss
rss
NF (1)
NF (2)
VGS = −30 V, VDS = 0 −1.0 nA
VDS = 0, IG = −100 µA −40 V
(Note)
V
VDS = 10 V, VGS = 0, f = 1 MHz 30 pF
VDG = 10 V, ID = 0, f = 1 MHz 6 pF
= 10 V, VGS = 0 2.6 20 mA
V
DS
VDS = 10 V, ID = 0.1 µA −0.2 −1.5 V
= 10 V, VGS = 0, f = 1 kHz 22 mS
DS
= 10 V, ID = 1.0 mA, RG = 1 kΩ,
V
DS
f = 1 kHz
= 10 V, ID = 1.0 mA, RG = 1 kΩ,
V
DS
f = 1 kHz
1.0 10
0.5 2
dB
1
2003-03-25
2SK170
2
2003-03-25
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