Philips 2sj74 DATASHEETS
TOSHIBA Field Effect Transistor Silicon P Channel Junction Type
2SJ74
2SJ74
Low Noise Audio Amplifier Applications
· Recommended for first stages of EQ amplifiers and M.C. head
amplifiers.
· High |Y
(VDS = −10 V, VGS = 0, I
· Low noise: En = 0.95 nV/Hz
(V
· High input impedance: I
· Complimentary to 2SK170
Maximum Ratings
Gate-drain voltage V
Gate current IG -10 mA
Drain power dissipation PD 400 mW
Junction temperature T
Storage temperature range T
Electrical Characteristics
|: |Yfs| = 22 mS (typ.)
fs
= −3 mA)
DSS
1/2
(typ.)
= −10 V, ID = −1 mA, f = 1 kHz)
DS
= 1.0 nA (max) (VGS = 25 V)
GSS
(Ta ==== 25°C)
Characteristics Symbol Rating Unit
GDS
j
stg
(Ta ==== 25°C)
25 V
125 °C
-55~125 °C
Unit: mm
JEDEC TO-92
JEITA SC-43
TOSHIBA 2-5F1D
Weight: 0.21 g (typ.)
Characteristics Symbol Test Condition Min Typ. Max Unit
Gate cut-off current I
Gate-drain breakdown voltage V
Drain current
Gate-source cut-off voltage V
Forward transfer admittance ïYfsï VDS = -10 V, VGS = 0, f = 1 kHz 8 22 ¾ mS
Input capacitance C
Reverse transfer capacitance C
Noise figure
Note: I
classification GR: -2.6~-6.5 mA, BL: -6.0~-12 mA, V: -10~-20 mA
DSS
GSS
(BR) GDSVDS
I
DSS
GS (OFF)
iss
rss
NF (1)
NG (2)
VGS = 25 V, VDS = 0 ¾ ¾ 1.0 nA
= 0, IG = 100 mA 25 ¾ ¾ V
(Note)
VDS = -10 V, VGS = 0, f = 1 MHz ¾ 105 ¾ pF
VDG = -10 V, ID = 0, f = 1 MHz ¾ 32 ¾ pF
= -10 V, VGS = 0 -2.6 ¾ -20 mA
V
DS
VDS = -10 V, ID = -0.1 mA 0.15 ¾ 2.0 V
= -10 V, ID = -1 mA, RG = 1 kW,
V
DS
f = 10 Hz
= -10 V, ID = -1 mA, RG = 1 kW,
V
DS
f = 1 kHz
¾ 1.0 10
¾ 0.5 2
dB
1
2003-03-25
2SJ74
2
2003-03-25
Loading...