Philips 2sj201 DATASHEETS

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type

2SJ201

2SJ201

High Power Amplifier Application

l High breakdown voltage : V
l High forward transfer admittance : |Y

= −200 V

DSS

| = 5.0 S (typ.)

fs

l Complementary to 2SK1530

Maximum Ratings

Characteristics Symbol Rating Unit

Drain−source voltage V

Gate−source voltage V

Drain current (Note 1) ID −12 A

Drain power dissipation PD 150 W

Channel temperature Tch 150 °C

Storage temperature range T

(Tc = 25°C)

−200 V

DSS

±20 V

GSS

−55~150 °C

stg

Marking

Unit: mm

JEDEC ―

JEITA ―

TOSHIBA 2-21F1B

Weight: 9.75 g (typ.)

Electrical Characteristics

(Tc = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Drain cut−off current I

Gate leakage current I

Drain−source breakdown voltage V

Gate−source cut−off voltage
(Note 2)

Drain−source saturation voltage V

Forward transfer admittance |Yfs| VDS = −10 V, ID = −5 A ― 5.0 ― S

Input capacitance C

Output capacitance C

Reverse transfer capacitance C

VDS = −200 V, VGS = 0 ― ― −1.0 mA

DSS

VDS = 0, VGS = ±20 V ― ― ±0.5 µA

GSS

(BR) DSSID

V

GS (OFF) VDS

DS (ON)

VDS = −30 V, VGS = 0, f = 1 MHz ― 1500 ―

iss

oss

VDS = −30 V, VGS = 0, f = 1 MHz ― 230 ―

rss

= −10 mA, VGS = 0 −200 ― ― V

= −10 V, ID = −0.1 A −0.8 ― −2.8 V

ID = −8 A, VGS = −10 V ― −2.0 −5.0 V

VDS = −30 V, VGS = 0, f = 1 MHz ― 430 ―

Note 1: Please use devices on condition that the channel temperature is below 150°C.

Note 2: V

GS (OFF)

Classification O: −0.8~−1.6, Y: −1.4~−2.8

This transistor is an electrostatic sensitive device.
Please handle with caution.

pF

1

2002-06-05

2SJ201

2

2002-06-05