Philips 2sj201 DATASHEETS
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
2SJ201
2SJ201
High Power Amplifier Application
l High breakdown voltage : V
l High forward transfer admittance : |Y
= −200 V
DSS
| = 5.0 S (typ.)
fs
l Complementary to 2SK1530
Maximum Ratings
Characteristics Symbol Rating Unit
Drain−source voltage V
Gate−source voltage V
Drain current (Note 1) ID −12 A
Drain power dissipation PD 150 W
Channel temperature Tch 150 °C
Storage temperature range T
(Tc = 25°C)
−200 V
DSS
±20 V
GSS
−55~150 °C
stg
Marking
Unit: mm
JEDEC ―
JEITA ―
TOSHIBA 2-21F1B
Weight: 9.75 g (typ.)
Electrical Characteristics
(Tc = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Drain cut−off current I
Gate leakage current I
Drain−source breakdown voltage V
Gate−source cut−off voltage
(Note 2)
Drain−source saturation voltage V
Forward transfer admittance |Yfs| VDS = −10 V, ID = −5 A ― 5.0 ― S
Input capacitance C
Output capacitance C
Reverse transfer capacitance C
VDS = −200 V, VGS = 0 ― ― −1.0 mA
DSS
VDS = 0, VGS = ±20 V ― ― ±0.5 µA
GSS
(BR) DSSID
V
GS (OFF) VDS
DS (ON)
VDS = −30 V, VGS = 0, f = 1 MHz ― 1500 ―
iss
oss
VDS = −30 V, VGS = 0, f = 1 MHz ― 230 ―
rss
= −10 mA, VGS = 0 −200 ― ― V
= −10 V, ID = −0.1 A −0.8 ― −2.8 V
ID = −8 A, VGS = −10 V ― −2.0 −5.0 V
VDS = −30 V, VGS = 0, f = 1 MHz ― 430 ―
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: V
GS (OFF)
Classification O: −0.8~−1.6, Y: −1.4~−2.8
This transistor is an electrostatic sensitive device.
Please handle with caution.
pF
1
2002-06-05
2SJ201
2
2002-06-05
Loading...