Philips 2sj107 DATASHEETS
TOSHIBA Field Effect Transistor Silicon P Channel Junction Type
2SJ107
2SJ107
For Audio Amplifier, Analog Switch, Constant Current
and Impedance Converter Applications
· High input impedance: I
· Low R
DS (ON)
: R
DS (ON)
· Small package
· Complementary to 2SK366
Maximum Ratings
Characteristics Symbol Rating Unit
Gate-drain voltage V
Gate current IG -10 mA
Drain power dissipation PD 200 mW
Junction temperature T
Storage temperature range T
Electrical Characteristics
= 1.0 nA (max) (VGS = 25 V)
GSS
= 40 Ω (typ.)
(Ta ==== 25°C)
25 V
GDS
j
stg
(Ta ==== 25°C)
125 °C
-55~125 °C
Unit: mm
JEDEC ―
JEITA ―
TOSHIBA 2-4E1C
Weight: 0.13 g (typ.)
Characteristics Symbol Test Condition Min Typ. Max Unit
Gate cut-off current I
Gate-drain breakdown voltage V
Drain current
Gate-source cut-off voltage V
Forward transfer admittance ïYfsï
Input capacitance C
Reverse transfer capacitance C
Drain-source ON resistance R
Note 1: I
classification GR: -2.6~-6.5 mA, BL: -6~-12 mA, V: -10~-20 mA
DSS
Note 2: Condition of the typical value I
GSS
(BR) GDSVDS
I
DSS
(Note 1)
GS (OFF)
iss
rss
DS (ON)
DSS
VGS = 25 V, VDS = 0 ¾ ¾ 1.0 nA
= 0, IG = 100 mA 25 ¾ ¾ V
VDS = -10 V, VGS = 0, f = 1 MHz ¾ 105 ¾ pF
VGD = 10 V, ID = 0, f = 1 MHz ¾ 32 ¾ pF
= -10 V, VGS = 0 -2.6 ¾ -20 mA
V
DS
VDS = -10 V, ID = -0.1 mA 0.2 ¾ 2.0 V
V
= -10 V, VGS = 0, f = 1 kHz
DS
(Note 2)
VDS = -10 mV, VGS = 0 (Note 2) ¾ 40 ¾ W
12 30 ¾ mS
= -5 mA
1
2003-03-25
2SJ107
2
2003-03-25
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