Philips 2sb817, 2sd1047 DATASHEETS

Ordering number:680F

PNP Epitaxial Planar Silicon Transistors

NPN Triple Diffused Planar Silicon Transistors

2SB817/2SD1047

140V/12A AF 60W Output Applications

Features

· Capable of being mounted easily because of one­point fixing type plastic molded package (Inter­changeable with TO-3).

· Wide ASO because of on-chip ballast resistance.

· Good depenedence of fT on current and excellent
high frequency responce.

The descriptions in parentheses are for the 2SB817 only :
other descriptions than those in parentheses are common
to the 2SB817 and 2SD1047.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

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egatloVesaB-ot-rotcelloCV

egatloVrettimE-ot-rotcelloCV

egatloVesaB-ot-rettimEV

tnerruCrotcelloCI

)esluP(tnerruCrotcelloCI

noitapissiDrotcelloCP

erutarepmeTnoitcnuJjT 051

erutarepmeTegarotSgtsT 051+ot04–

OBC
OEC
OBE

C

PC

Tc=25˚C

C

Package Dimensions

unit:mm

2022A

[2SB817/2SD1047]

1 : Base
2 : Collector
3 : Emitter

SANYO : TO-3PB

061)–(V

041)–(V

6)–(V

21)–(A

51)–(A
001W

˚C
˚C

Electrical Characteristics at Ta = 25˚C

retemaraPlobmySsnoitidnoC

tnerruCffotuCrotcelloCI

tnerruCffotuCrettimEI

niaGtnerruCCDh

tcudorPhtdiwdnaB-niaGf

ecnaticapaCtuptuOC

* : The 2SB817/2SD1047 are classified by 1A hFE as follows :

hEF2VECI,V5)–(=

021D06002E001

OBC
OBE

1VECI,V5)–(=

EF

T

bo

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

V

BC

V

BE

V

EC

V

BC

I,V08)–(=

0=1.0)–(Am

E

I,V4)–(=

0=1.0)–(Am

C

A1)–(=

C

A6)–(=

C

I,V5)–(=

A1)–(=51zHM

C

zHM1=f,V01)–(=

nimpytxam

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

91098HA (KT)/90595MO (KOTO)/4017KI/6284KI, MT 8-3416/7039 No.680–1/4

sgnitaR

*06*002

02

)003(Fp

012Fp

tinU

2SB817/2SD1047

retemaraPlobmySsnoitidnoC

egatloVrettimE-ot-esaBV

egatloVnoitarutaSrettimE-ot-rotcelloCV

egatloVnwodkaerBesaB-ot-rotcelloCV

egatloVnwodkaerBrettimE-ot-rotcelloCV

egatloVnwodkaerBesaB-ot-rettimEV

emiTNO-nruTt

emiTllaFt

emiTegarotSt

V

EB

I

)tas(EC

C

I

OBC)RB(

C

I

OEC)RB(

C

I

C

I

OBE)RB(

E

no

f

gts

I,V5)–(=

EC

I,A5)–(=

A1)–(=5.1V

C

A5.0)–(=

B

I,Am5)–(=

0=061)–(V

E

R,Am5)–(=

=∞ 041)–(V

EB

R,Am05)–(=

=∞ 041)–(V

EB

I,Am5)–(=

0=6)–(V

C

tiucriCtseTdeificepseeS

tiucriCtseTdeificepseeS

tiucriCtseTdeificepseeS

Switching Time T est Circuit

sgnitaR

nimpytxam

6.05.2V
)1.1(V

)52.0(sµ

62.0sµ
)35.0(sµ

86.0sµ
)16.1(sµ

88.6sµ

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No.680–2/4