Philips 2sc982tm DATASHEETS
2SC982TM
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Darlington)
2SC982TM
Printer Drive, Core Drive and LED Drive Applications
Low Frequency Amplifier Applications
· High DC current gain: h
: h
= 5000 (min) (IC = 10 mA)
FE (1)
= 10000 (min) (IC = 100 mA)
FE (2)
Equivalent Circuit
Maximum Ratings
Characteristics Symbol Rating Unit
Collector-base voltage V
Collector-emitter voltage V
Emitter-base voltage V
Collector current
Base current IB 10 mA
Collector power dissipation PC 400 mW
Junction temperature T
Storage temperature range T
(Ta ==== 25°C)
DC IC 300
Pulsed
(Note)
40 V
CBO
40 V
CEO
10 V
EBO
500
I
CP
125 °C
-55~125 °C
stg
j
mA
Unit: mm
JEDEC TO-92
JEITA SC-43
TOSHIBA 2-5F1B
Weight: 0.21 g (typ.)
Note: Pulse width< 10 ms, duty cycle< 10%
Electrical Characteristics
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current I
Emitter cut-off current I
DC current gain
Collector-emitter saturation voltage V
Base-emitter voltage VBE VCE = 2 V, IC = 100 mA ¾ 1.25 1.6 V
(Ta ==== 25°C)
h
h
CE (sat)
VCB = 40 V, IE = 0 ¾ ¾ 0.1 mA
CBO
VEB = 8 V, IC = 0 ¾ ¾ 0.1 mA
EBO
VCE = 5 V, IC = 10 mA 5000 ¾ ¾
FE (1)
VCE = 2 V, IC = 100 mA 10000 ¾ ¾
FE (2)
IC = 300 mA, IB = 0.3 mA ¾ 0.9 1.3 V
1
2003-03-25
2SC982TM
2
2003-03-25
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