Philips 1PSxSB17 Technical data

1PSxSB17
4 V, 30 mA low Cd Schottky barrier diode
Rev. 06 — 4 April 2005 Product data sheet
1. Product profile

1.1 General description

Planar low capacitance Schottky barrier diode encapsulated in a very small SMD plastic package.
Table 1: Product overview
Type number Package Configuration
1PS66SB17 SOT666 - triple isolated diode 1PS76SB17 SOD323 SC-76 single diode 1PS79SB17 SOD523 SC-79 single diode

1.2 Features

Philips JEITA
Very low diode capacitance
Very low forward voltage
Very small SMD plastic packages
Digital applications:
Ultra high-speed switching
Clamping circuits.
RF applications:
Diode ring mixer
RF detector
RF voltage doubler

1.4 Quick reference data

Table 2: Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
I
F
V
R
C
d
continuous forward current - - 30 mA continuous reverse voltage - - 4 V diode capacitance - 0.8 1 pF
Philips Semiconductors

2. Pinning information

Table 3: Pinning
Pin Description Simplified outline Symbol
SOD323 (SC-76); SOD523 (SC-79)
1 cathode 2 anode
SOT666
1 anode (diode 1) 2 anode (diode 2) 3 anode (diode 3) 4 cathode (diode 3) 5 cathode (diode 2) 6 cathode (diode 1)
1PSxSB17
4 V, 30 mA low Cd Schottky barrier diode
[1]
12
12
001aab540
456
123
sym001
61524
3
sym046
[1] The marking bar indicates the cathode.

3. Ordering information

Table 4: Ordering information
Type number Package
1PS66SB17 - plastic surface mounted package; 6 leads SOT666 1PS76SB17 SC-76 plastic surface mounted package; 2 leads SOD323 1PS79SB17 SC-79 plastic surface mounted package; 2 leads SOD523

4. Marking

Table 5: Marking codes
Type number Marking code
1PS66SB17 N2 1PS76SB17 S7 1PS79SB17 T2

5. Limiting values

Name Description Version
Table 6: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
R
I
F
9397 750 14587 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 06 — 4 April 2005 2 of 8
continuous reverse voltage - 4 V continuous forward current - 30 mA
Philips Semiconductors
1PSxSB17
4 V, 30 mA low Cd Schottky barrier diode
Table 6: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
T
j
T
amb
T
stg
junction temperature - 150 °C ambient temperature 65 +150 °C storage temperature 65 +150 °C

6. Thermal characteristics

Table 7: Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
[1] For Schottky barrier diodes, thermal run-away has to be considered as in some applications the reverse
[2] Refer to SOD323 (SC-76) standard mounting conditions. [3] Refer to SOD523 (SC-79) standard mounting conditions. [4] Refer to SOT666 standard mounting conditions.
thermal resistance from junction to ambient;
SOD323 SOD523 SOT666
power losses PR are a significant part of the total power losses. Nomograms for determining the reverse power losses PR and I
…continued
rating will be available on request.
F(AV)
in free air
[1]
[2]
- - 450 K/W
[3]
- - 450 K/W
[4]
- - 700 K/W

7. Characteristics

Table 8: Characteristics
T
amb
Symbol Parameter Conditions Min Typ Max Unit
V
F
I
R
C
d
[1] Pulse test: tp≤ 300 µs; δ≤0.02.
=25°C unless otherwise specified.
forward voltage see Figure 1;
[1]
IF= 0.1 mA - 300 350 mV
= 1 mA - 360 450 mV
I
F
= 10 mA - 470 600 mV
I
F
reverse current VR = 3 V; see Figure 2 - - 250 nA diode
capacitance
see Figure 3;
= 0 V; f = 1 MHz - 0.8 1 pF
V
R
= 0.5 V; f = 1 MHz - 0.65 - pF
V
R
9397 750 14587 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 06 — 4 April 2005 3 of 8
Philips Semiconductors
1PSxSB17
4 V, 30 mA low Cd Schottky barrier diode
2
10
I
F
(mA)
10
1
1
10
2
10
0 0.80.60.2 0.4
(1) T (2) T (3) T (4) T
amb amb amb amb
= 150 °C =85°C =25°C = 40 °C
(3) (4)(2)(1)
006aaa077
VF (V)
Fig 1. Forward current as a function of forward
voltage; typical values.
5
10
I
R
(nA)
4
10
3
10
2
10
10
1
1
10
2
10
3
10
04312
(1) T (2) T (3) T (4) T
amb amb amb amb
= 150 °C =85°C =25°C = 40 °C
(1)
(2)
(3)
(4)
006aaa078
VR (V)
Fig 2. Reverse current as a function of reverse
voltage; typical values.
V
mlc797
(V)
R
T
=25°C; f = 1 MHz
amb
0.8
C
d
(pF)
0.7
0.6
0.5
0.4 01234
Fig 3. Diode capacitance as a function of reverse voltage; typical values.
9397 750 14587 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 06 — 4 April 2005 4 of 8
Philips Semiconductors

8. Package outline

1PSxSB17
4 V, 30 mA low Cd Schottky barrier diode
1.35
1.15
1
2
0.40
0.25
0.45
0.15
1.65
1.55
1.25
1.15
0.85
0.75
0.34
0.26
0.65
0.58
1
2.7
1.8
2.3
1.6
2
0.17
0.11 02-12-13Dimensions in mm
Fig 4. Package outline SOD523 (SC-79) Fig 5. Package outline SOD323 (SC-76)
1.7
1.5
1.3
1.1 pin 1 index
1.7
1.5
456
0.3
0.1
0.6
0.5
1.1
0.8
0.25
0.10 03-12-17Dimensions in mm
123
0.18
0.08
04-11-08
Dimensions in mm
0.5
0.27
1
0.17
Fig 6. Package outline SOT666

9. Packing information

Table 9: Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.
Type number Package Description Packing quantity
1PS66SB17 SOT666 4 mm pitch, 8 mm tape and reel - -115 ­1PS76SB17 SOD323 4 mm pitch, 8 mm tape and reel -115 -135 1PS79SB17 SOD523 4 mm pitch, 8 mm tape and reel -115 -135
[1] For further information and the availability of packing methods, seeSection14.
[1]
3000 4000 10000
9397 750 14587 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 06 — 4 April 2005 5 of 8
Philips Semiconductors
4 V, 30 mA low Cd Schottky barrier diode
1PSxSB17

10. Revision history

Table 10: Revision history
Document ID Release date Data sheet status Change notice Doc. number Supersedes
1PSXSB17_6 20050404 Product data sheet - 9397 750 14587 1PS76SB17_1
PS79SB17_5 Modifications: 1PS76SB17_1PS79SB17_5 20041028 Product data sheet - 9397 750 13733 1PS76SB17_4 1PS76SB17_4 20040126 Product data sheet - 9397 750 12618 1PS76SB17_3 1PS76SB17_3 20020809 Product data sheet - 9397 750 10174 1PS76SB17_2 1PS76SB17_2 19990525 Preliminary data sheet - 9397 750 05893 1PS76SB17_1 1PS76SB17_1 19961014 Preliminary data sheet - 9397 750 01342 -
Type number 1PS66SB17 added
9397 750 14587 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 06 — 4 April 2005 6 of 8
Philips Semiconductors

11. Data sheet status

1PSxSB17
4 V, 30 mA low Cd Schottky barrier diode
Level Data sheet status
I Objective data Development This data sheet contains data from the objective specification for product development. Philips
II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published
III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the
[1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
[1]
Product status
12. Definitions
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook.
Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification.
[2] [3]
Definition
Semiconductors reserves the right to change the specification in any manner without notice.
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product.
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN).

13. Disclaimers

Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.
Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.

14. Contact information

For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com
9397 750 14587 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 06 — 4 April 2005 7 of 8
Philips Semiconductors

15. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 5
9 Packing information. . . . . . . . . . . . . . . . . . . . . . 5
10 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 6
11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . . 7
12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
13 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
14 Contact information . . . . . . . . . . . . . . . . . . . . . 7
1PSxSB17
4 V, 30 mA low Cd Schottky barrier diode
© Koninklijke Philips Electronics N.V. 2005
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Published in The Netherlands
Date of release: 4 April 2005
Document number: 9397 750 14587
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