Philips 1PSxSB17 Technical data
1PSxSB17
4 V, 30 mA low Cd Schottky barrier diode
Rev. 06 — 4 April 2005 Product data sheet
1. Product profile
1.1 General description
Planar low capacitance Schottky barrier diode encapsulated in a very small SMD plastic
package.
Table 1: Product overview
Type number Package Configuration
1PS66SB17 SOT666 - triple isolated diode
1PS76SB17 SOD323 SC-76 single diode
1PS79SB17 SOD523 SC-79 single diode
1.2 Features
Philips JEITA
■ Very low diode capacitance
■ Very low forward voltage
■ Very small SMD plastic packages
1.3 Applications
■ Digital applications:
◆ Ultra high-speed switching
◆ Clamping circuits.
■ RF applications:
◆ Diode ring mixer
◆ RF detector
◆ RF voltage doubler
1.4 Quick reference data
Table 2: Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
I
F
V
R
C
d
continuous forward current - - 30 mA
continuous reverse voltage - - 4 V
diode capacitance - 0.8 1 pF
Philips Semiconductors
2. Pinning information
Table 3: Pinning
Pin Description Simplified outline Symbol
SOD323 (SC-76); SOD523 (SC-79)
1 cathode
2 anode
SOT666
1 anode (diode 1)
2 anode (diode 2)
3 anode (diode 3)
4 cathode (diode 3)
5 cathode (diode 2)
6 cathode (diode 1)
1PSxSB17
4 V, 30 mA low Cd Schottky barrier diode
[1]
12
12
001aab540
456
123
sym001
61524
3
sym046
[1] The marking bar indicates the cathode.
3. Ordering information
Table 4: Ordering information
Type number Package
1PS66SB17 - plastic surface mounted package; 6 leads SOT666
1PS76SB17 SC-76 plastic surface mounted package; 2 leads SOD323
1PS79SB17 SC-79 plastic surface mounted package; 2 leads SOD523
4. Marking
Table 5: Marking codes
Type number Marking code
1PS66SB17 N2
1PS76SB17 S7
1PS79SB17 T2
5. Limiting values
Name Description Version
Table 6: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
R
I
F
9397 750 14587 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 06 — 4 April 2005 2 of 8
continuous reverse voltage - 4 V
continuous forward current - 30 mA
Philips Semiconductors
1PSxSB17
4 V, 30 mA low Cd Schottky barrier diode
Table 6: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
T
j
T
amb
T
stg
junction temperature - 150 °C
ambient temperature −65 +150 °C
storage temperature −65 +150 °C
6. Thermal characteristics
Table 7: Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
[1] For Schottky barrier diodes, thermal run-away has to be considered as in some applications the reverse
[2] Refer to SOD323 (SC-76) standard mounting conditions.
[3] Refer to SOD523 (SC-79) standard mounting conditions.
[4] Refer to SOT666 standard mounting conditions.
thermal resistance from junction to
ambient;
SOD323
SOD523
SOT666
power losses PR are a significant part of the total power losses. Nomograms for determining the reverse
power losses PR and I
…continued
rating will be available on request.
F(AV)
in free air
[1]
[2]
- - 450 K/W
[3]
- - 450 K/W
[4]
- - 700 K/W
7. Characteristics
Table 8: Characteristics
T
amb
Symbol Parameter Conditions Min Typ Max Unit
V
F
I
R
C
d
[1] Pulse test: tp≤ 300 µs; δ≤0.02.
=25°C unless otherwise specified.
forward voltage see Figure 1;
[1]
IF= 0.1 mA - 300 350 mV
= 1 mA - 360 450 mV
I
F
= 10 mA - 470 600 mV
I
F
reverse current VR = 3 V; see Figure 2 - - 250 nA
diode
capacitance
see Figure 3;
= 0 V; f = 1 MHz - 0.8 1 pF
V
R
= 0.5 V; f = 1 MHz - 0.65 - pF
V
R
9397 750 14587 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 06 — 4 April 2005 3 of 8
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