DISCRETE SEMICONDUCTORS
DATA SHEET
M3D425
1PS89SS04; 1PS89SS05; 1PS89SS06
High-speed double diodes
Preliminary specification |
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1999 Jun 08 |
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Supersedes data of 1999 Mar 01 |
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Philips Semiconductors |
Preliminary specification |
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High-speed double diodes
1PS89SS04; 1PS89SS05; 1PS89SS06
FEATURES
∙Power dissipation comparable to SOT23
∙Ultra small plastic SMD package
∙High switching speed: max. 4 ns
∙Continuous reverse voltage: max. 80 V
∙Repetitive peak reverse voltage: max. 85 V
∙Repetitive peak forward current: max. 500 mA.
APPLICATIONS
∙High speed switching in e.g. surface mounted circuits.
DESCRIPTION
Two high-speed switching diodes in planar technology, with different configurations, in an ultra small SC-89 (SOT490) plastic SMD package.
LIMITING VALUES
PINNING
PIN |
1PS89SS.. |
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04 |
05 |
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06 |
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1 |
a1 |
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a1 |
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k1 |
2 |
k2 |
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a2 |
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k2 |
3 |
k1, a2 |
k1, k2 |
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a1, a2 |
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page |
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Top view |
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MBK837 |
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Fig.1 |
Simplified outline |
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(SC-89; SOT490) and |
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pin configuration. |
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MARKING |
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TYPE NUMBER |
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MARKING |
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CODE |
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1PS89SS04 |
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S4 |
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1PS89SS05 |
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S5 |
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1PS89SS06 |
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S6 |
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3
1 
2
MGL550
Fig.2 1PS89SS04 diode configuration (symbol).
3
1 
2
MGL551
Fig.3 1PS89SS05 diode configuration (symbol).
3
1 
2
MGL552
Fig.4 1PS89SS06 diode configuration (symbol).
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
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Per diode unless otherwise specified |
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VRRM |
repetitive peak reverse voltage |
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85 |
V |
VR |
continuous reverse voltage |
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80 |
V |
IF |
continuous forward current |
Tamb = 25 °C; note 1; see Fig.5 |
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single diode loaded |
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200 |
mA |
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both diodes loaded |
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125 |
mA |
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IFRM |
repetitive peak forward current |
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− |
500 |
mA |
IFSM |
non-repetitive peak forward current |
square wave; Tj = 25 °C prior to |
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surge; see Fig.7 |
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t = 1 μs |
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4 |
A |
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t = 1 s |
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0.5 |
A |
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1999 Jun 08 |
2 |
Philips Semiconductors Preliminary specification
High-speed double diodes |
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1PS89SS04; 1PS89SS05; |
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1PS89SS06 |
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SYMBOL |
PARAMETER |
CONDITIONS |
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MIN. |
MAX. |
UNIT |
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Ptot |
total power dissipation (per package) |
Tamb ≤ 25 °C; note 1 |
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250 |
mW |
Tstg |
storage temperature |
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−65 |
+150 |
°C |
Tj |
junction temperature |
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− |
+150 |
°C |
Note
1. Refer to SC-89 (SOT490) standard mounting conditions.
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL |
PARAMETER |
CONDITIONS |
TYP. |
MAX. |
UNIT |
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Per diode |
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VF |
forward voltage |
see Fig.6 |
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IF = 1 mA |
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610 |
− |
mV |
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IF = 10 mA |
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740 |
− |
mV |
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IF = 50 mA |
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1 |
V |
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IF = 100 mA |
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1.2 |
V |
IR |
reverse current |
see Fig.8 |
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VR = 25 V |
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30 |
nA |
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VR = 80 V |
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0.5 |
μA |
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VR = 25 V; Tj = 150 °C |
− |
30 |
μA |
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VR = 80 V; Tj = 150 °C |
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100 |
μA |
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Cd |
diode capacitance |
f = 1 MHz; VR = 0; see Fig.9 |
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1PS89SS04 |
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− |
1.5 |
pF |
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1PS89SS05 |
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− |
1.5 |
pF |
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1PS89SS06 |
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2 |
pF |
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trr |
reverse recovery time |
switched from IF = 10 mA to IR = 10 mA; |
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4 |
ns |
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RL = 100 Ω; measured at IR = 1 mA; |
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see Fig.10 |
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Vfr |
forward recovery voltage |
switched to IF = 10 mA; tr = 20 ns; |
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1.75 |
V |
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see Fig.11 |
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THERMAL CHARACTERISTICS |
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SYMBOL |
PARAMETER |
CONDITIONS |
VALUE |
UNIT |
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Rth j-s |
thermal resistance from junction to soldering point |
both diodes loaded |
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1PS89SS04 |
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55 |
K/W |
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1PS89SS05 |
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70 |
K/W |
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1PS89SS06 |
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70 |
K/W |
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Rth j-a |
thermal resistance from junction to ambient |
note 1 |
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500 |
K/W |
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Note
1. Refer to SC-89 (SOT490) standard mounting conditions.
1999 Jun 08 |
3 |
Philips Semiconductors |
Preliminary specification |
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High-speed double diodes
1PS89SS04; 1PS89SS05; 1PS89SS06
GRAPHICAL DATA
MGL553
300
IF (mA)
(1)
200
(2)
100
0
0 |
50 |
100 |
150 |
200 |
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Tamb (°C) |
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(1)One diode loaded.
(2)Both diodes loaded.
Fig.5 Maximum permissible continuous forward current as a function of the ambient temperature.
MBG382
300 handbook, halfpage
IF (mA)
(1) |
(2) |
(3) |
200
100
0
0 |
1 |
VF |
(V) |
2 |
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(1)Tj = 150 °C; typical values.
(2)Tj = 25 °C; typical values.
(3)Tj = 25 °C; maximum values.
Fig.6 Forward current as a function of forward voltage.
MBG704
102 handbook, full pagewidth
IFSM
(A)
10
1
10−1
1 |
10 |
102 |
103 |
tp (μs) |
104 |
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Based on square wave currents.
Tj = 25 °C prior to surge.
Fig.7 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
1999 Jun 08 |
4 |
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