Philips 1PS89SB74 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
M3D425
1PS89SB74
Schottky barrier double diode
Product specification 2001 Apr 20
Philips Semiconductors Product specification
Schottky barrier double diode 1PS89SB74
FEATURES
PINNING
• Low forward voltage
• High breakdown voltage
• Guard ring protected
• Ultra small plastic SMD package
• Low capacitance.
APPLICATIONS
page
• Ultra high-speed switching
• Voltage clamping
• Protection circuits
• Blocking diodes.
Marking code: S7.
DESCRIPTION
Fig.1 Simplified outline (SOT490; SC-89) and
Planar Schottky barrier diode encapsulated in a SOT490
(SC-89) ultra small plastic SMD package.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
PIN DESCRIPTION
1 anode (a
2 cathode (k
3 common (k
3
12
Top view
MBK837
)
1
)
2
)
1,a2
3
12
symbol.
MLC358
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per diode unless otherwise specified
V
I
F
I
FRM
I
FSM
P
T
T
T
R
tot
stg
j
amb
continuous reverse voltage − 70 V
continuous forward current − 70 mA
repetitive peak forward current tp≤ 1s;δ≤0.5 − 70 mA
non-repetitive peak forward current tp<10ms − 100 mA
total power dissipation (per package) T
≤ 25 °C − 200 mW
amb
storage temperature −65 +150 °C
junction temperature − +150 °C
operating ambient temperature −65 +150 °C
2001 Apr 20 2
Philips Semiconductors Product specification
Schottky barrier double diode 1PS89SB74
ELECTRICAL CHARACTERISTICS
T
=25°C unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS MAX. UNIT
Per diode
V
F
I
R
C
d
Note
1. Pulse test: t
continuous forward voltage see Fig.2;
I
= 1 mA 410 mV
F
I
= 10 mA 750 mV
F
I
=15mA 1 V
F
continuous reverse current VR= 50 V; see Fig.3; note 1 100 nA
V
= 70 V; see Fig.3; note 1 10 µA
R
diode capacitance VR= 0; f = 1 MHz; see Fig.4 2 pF
≤ 300 µs; δ≤0.02.
p
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient note 1 500 K/W
Note
1. Refer to SOT490 (SC-89) standard mounting conditions.
2001 Apr 20 3
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