Philips 1PS89SB16, 1PS89SB15, 1PS89SB14 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
M3D425
1PS89SB14; 1PS89SB15;
1PS89SB16
Schottky barrier double diodes
Preliminary specification
1998 Nov 10
Philips Semiconductors Preliminary specification
Schottky barrier double diodes
FEATURES
• Power dissipation comparable to
SOT23
• Low forward voltage
• Guard ring protected
• Ultra small SMD package.
APPLICATIONS
• Ultra high speed switching
• Voltage clamping
• Protection circuits
• Blocking diodes.
DESCRIPTION
Planar Schottky barrier double diodes
encapsulated in an ultra small plastic
SMD SC-89 (SOT490) package.
PINNING
PIN
1a
2k
3k1,a2k1,k
page
1PS89SB14; 1PS89SB15;
1PS89SB..
14 15 16
1
2
12
Top view
a
1
a
2
2
3
MBK837
k
1
k
2
a1,a
2
1PS89SB16
3
12
MLC358
Fig.2 1PS89SB14 diode
configuration (symbol).
3
12
MLC359
Fig.3 1PS89SB15 diode
configuration (symbol).
MARKING
TYPE NUMBER
1PS89SB14 44
1PS89SB15 43
1PS89SB15 45
MARKING
CODE
Fig.1 Simplified outline
(SC-89; SOT490) and
pin configuration.
3
12
MLC360
Fig.4 1PS89SB16 diode
configuration (symbol).
1998 Nov 10 2
Philips Semiconductors Preliminary specification
Schottky barrier double diodes
1PS89SB14; 1PS89SB15;
1PS89SB16
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per diode unless otherwise specified
V
R
I
F
I
FRM
I
FSM
P
tot
T
stg
T
j
T
amb
ELECTRICAL CHARACTERISTICS
T
=25°C unless otherwise specified.
amb
continuous reverse voltage
continuous forward current −
repetitive peak forward current tp≤ 1s;δ≤0.5
non-repetitive peak forward current tp< 10 ms
≤ 25 °C
total power dissipation (per package)
T
amb
storage temperature
junction temperature
operating ambient temperature
−
−
−
−
−65
−
−65
30 V
200 mA
300 mA
600 mA
200 mW
+150 °C
125 °C
+125 °C
SYMBOL PARAMETER CONDITIONS MAX. UNIT
Per diode unless otherwise specified
V
F
I
R
C
d
forward voltage see Fig.5
I
= 0.1 mA
F
= 1mA
I
F
I
=10mA
F
I
=30mA
F
= 100 mA
I
F
reverse current VR= 25 V; note 1; see Fig.6
diode capacitance f = 1 MHz; VR= 1 V; see Fig.7
240 mV
320 mV
400 mV
500 mV
800 mV
2
µA
10 pF
Note
1. Pulse test: t
≤ 300 µs; δ≤0.02.
p
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient note 1 500 K/W
Note
1. Refer to SC-89 (SOT490) standard mounting conditions.
1998 Nov 10 3
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