Philips 1PS88SB82 Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

ook, halfpage

MBD128

1PS88SB82

Schottky barrier triple diode

Product specification 2001 Feb 16

Philips Semiconductors Product specification

Schottky barrier triple diode 1PS88SB82

FEATURES

• Low forward voltage

• Low diode capacitance

• Three independent diodes in a small SMD plastic

package.

APPLICATIONS

• UHF mixers

• Sampling circuits

• Modulators

• Phase detectors.

DESCRIPTION

Three internal(galvanic) isolated silicon epitaxial Schottky
barrier diodes in a SOT363 (SC-88) small SMD plastic
package. ESD sensitive device, observe handling
precautions.

PINNING

PIN DESCRIPTION

1 anode (a1)
2 anode (a2)
3 anode (a3)
4 cathode (k3)
5 cathode (k2)
6 cathode (k1)

654

handbook, halfpage

123

Top view

Marking code: E1.

MSA370

Fig.1 Simplified outline (SOT363; SC-88)

and symbol.

12

6534

MGU324

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL PARAMETER MIN. MAX. UNIT

Per diode

V

R

I

F

T

stg

T

j

T

amb

continuous reverse voltage − 15 V
continuous forward voltage − 30 mA
storage temperature −65 +150 °C
junction temperature − 125 °C
operating ambient temperature −65 +150 °C

2001 Feb 16 2

Philips Semiconductors Product specification

Schottky barrier triple diode 1PS88SB82

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-a

Note

1. Refer to SOT363 standard mounting conditions.

CHARACTERISTICS

T

=25°C unless otherwise specified.

amb

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

Per diode

V

F

I

R

r

D

C

d

thermal resistance from junction to ambient note 1 416 K/W

forward voltage see note 1 and Fig.2

I

=1mA − 340 mV

F

=30mA − 700 mV

I

F

reverse current VR= 1 V; see Fig.3; note 1 − 0.2 µA
diode forward resistance f = 1 kHz; IF= 5 mA; see Fig.5 12 −Ω
diode capacitance VR= 0 V; f = 1 MHz; see Fig.4 1 − pF

Note

1. Pulse test: pulse width = 300 µs; δ = 0.02.

2001 Feb 16 3