DISCRETE SEMICONDUCTORS
DATA SH EET
k, halfpage
MBD128
1PS88SB48
Schottky barrier diodes
Product specification
Supersedes data of 1998 Aug 05
1999 Apr 26
Philips Semiconductors Product specification
Schottky barrier diodes 1PS88SB48
FEATURES
• Ultra fast switching speed
• Low forward voltage
• Small SMD package
• Guard ring protected
• Absorbs very high surge pulse
• Low capacitance.
APPLICATIONS
• High speed switching
• Circuit protection
• Voltage clamping.
DESCRIPTION
The 1PS88SB48 consists of two dual
high-speed switching diodes with
common cathodes, fabricated in
planar technology, and encapsulated
in the small SMD SC-88 plastic
package.
PINNING
PIN DESCRIPTION
1 anode (a1)
2 anode (a2)
3 common cathode (k1)
4 anode (a3)
5 anode (a4)
6 common cathode (k2)
654
handbook, halfpage
123
Top view
Marking code: 8t5.
MSA370
Fig.1 Simplified outline (SC-88) and symbol.
654
123
MGL160
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per diode
V
I
F
I
FRM
I
FSM
T
T
T
R
stg
j
amb
continuous reverse voltage − 40 V
continuous forward current − 120 mA
repetitive peak forward current tp≤ 1s;δ≤0.5 − 120 mA
non-repetitive peak forward current tp<10ms − 200 mA
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
1999 Apr 26 2
Philips Semiconductors Product specification
Schottky barrier diodes 1PS88SB48
ELECTRICAL CHARACTERISTICS
T
=25°C unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS MAX. UNIT
Per diode
V
F
I
R
C
d
Note
1. Pulse test: t
continuous forward voltage see Fig.2
= 1 mA 380 mV
I
F
I
= 10 mA 500 mV
F
=40mA 1 V
I
F
continuous reverse current VR= 30 V; note 1; see Fig.3 1 µA
V
= 40 V; note 1; see Fig.3 10 µA
R
diode capacitance VR= 0; f = 1 MHz; see Fig.5 5 pF
= 300 µs; δ = 0.02.
p
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient note 1 416 K/W
Note
1. Refer to SC-88 standard mounting conditions.
1999 Apr 26 3