Philips 1PS79SB70 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
M3D319
1PS79SB70
Schottky barrier diode
Product specification
File under Discrete Semiconductors
1998 Jul 16
Philips Semiconductors Product specification
Schottky barrier diode 1PS79SB70
FEATURES
• Low forward voltage
• High breakdown voltage
DESCRIPTION
Planar Schottky barrier diode encapsulated in a SC-79 ultra small plastic SMD
package.
• Guard ring protected
• Ultra small plastic SMD package
• Low capacitance.
APPLICATIONS
handbook, halfpage
ka
Top view
MAM403
• Ultra high-speed switching
• Voltage clamping
Marking code: G.
• Protection circuits
• Blocking diodes.
Fig.1 Simplified outline (SC-79) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
I
F
I
FRM
I
FSM
T
T
T
R
stg
j
amb
continuous reverse voltage
continuous forward current −
repetitive peak forward current tp≤ 1s;δ≤0.5
non-repetitive peak forward current tp< 10 ms
storage temperature
junction temperature
operating ambient temperature
−
−
−
−65
−
−65
70 V
70 mA
70 mA
100 mA
+150 °C
150 °C
+150 °C
1998 Jul 16 2
Philips Semiconductors Product specification
Schottky barrier diode 1PS79SB70
ELECTRICAL CHARACTERISTICS
T
=25°C unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS MAX. UNIT
V
F
I
R
C
d
Note
1. Pulsed test: t
THERMAL CHARACTERISTICS
forward voltage see Fig.2
I
=1mA
F
=10mA
I
F
=15mA
I
F
reverse current VR= 50 V; note 1; see Fig.3
= 70 V; note 1; see Fig.3
V
R
diode capacitance f = 1 MHz; VR= 0; see Fig.5
= 300 µs; δ = 0.02.
p
410 mV
750 mV
1V
100
10
nA
µA
2pF
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient note 1 450 K/W
Note
1. Refer to SC-79 standard mounting conditions.
1998 Jul 16 3
Loading...