Philips 1PS79SB62 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
M3D319
1PS79SB62
Schottky barrier diode
Product specification 2001 Jan 18
Philips Semiconductors Product specification
Schottky barrier diode 1PS79SB62
FEATURES
• Ultra high switching speed
• Very low capacitance
• High breakdown voltage
PINNING
PIN DESCRIPTION
1 cathode
2 anode
• Guard ring protected
• Ultra small plastic SMD package.
APPLICATIONS
andbook, halfpage
1
ka
2
• Ultra high-speed switching
• High frequency applications.
Marking code: S9.
Top view
MAM403
DESCRIPTION
Epitaxial Schottky barrier diode encapsulated in a
SOD523 (SC-79) ultra small plastic SMD package.
Fig.1 Simplified outline (SOD523; SC-79) and
symbol.
ESD sensitive device, observe handling precautions.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER MIN. MAX. UNIT
V
R
I
F
T
stg
T
j
T
amb
continuous reverse voltage − 40 V
continuous forward current − 20 mA
storage temperature −65 +150 °C
junction temperature − 125 °C
operating ambient temperature −65 +125 °C
2001 Jan 18 2
Philips Semiconductors Product specification
Schottky barrier diode 1PS79SB62
ELECTRICAL CHARACTERISTICS
T
=25°C unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS MAX. UNIT
V
F
I
R
C
d
Note
1. Pulse test: pulse width = 300 µs; δ = 0.02.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Refer to SOD523 (SC-79) standard mounting conditions.
forward voltage IF= 2 mA; see Fig.2; note 1 800 mV
reverse current VR= 40 V; see Fig.3; note 1 1 µA
diode capacitance VR= 0 V; f = 1 MHz; see Fig.4 0.6 pF
thermal resistance from junction to ambient note 1 450 K/W
2001 Jan 18 3
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