Philips 1PS76SB62 Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

, halfpage

M3D049

1PS76SB62

Schottky barrier diode

Product specification 2001 Feb 16

Philips Semiconductors Product specification

Schottky barrier diode 1PS76SB62

FEATURES

• Ultra high switching speed

• Very low capacitance

• High breakdown voltage

PINNING

PIN DESCRIPTION

1 cathode
2 anode

• Guard ring protected

• Two pin very small plastic SMD package.

lumns

12

APPLICATIONS

• Ultra high-speed switching

• High frequency applications.

Marking code: S6.

MGU328

DESCRIPTION

Epitaxial Schottky barrier diode encapsulated in a
SOD323 (SC-76) very small plastic SMD package.

Fig.1 Simplified outline (SOD323; SC-76) and

symbol.

ESD sensitive device, observe handling precautions.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL PARAMETER MIN. MAX. UNIT

V

R

I

F

T

stg

T

j

T

amb

continuous reverse voltage − 40 V
continuous forward current − 20 mA
storage temperature −65 +150 °C
junction temperature − 125 °C
operating ambient temperature −65 +125 °C

ELECTRICAL CHARACTERISTICS

T

=25°C unless otherwise specified.

amb

SYMBOL PARAMETER CONDITIONS MAX. UNIT

V

F

I

R

C

d

forward voltage IF= 2 mA; see Fig.2; note 1 800 mV
reverse current VR= 40 V; see Fig.3; note 1 1 µA
diode capacitance VR= 0 V; f = 1 MHz; see Fig.4 0.6 pF

Note

1. Pulse test: pulse width = 300 µs; δ = 0.02.

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-a

thermal resistance from junction to ambient note 1 450 K/W

Note

1. Refer to SOD323 (SC-76) standard mounting conditions.

2001 Feb 16 2

Philips Semiconductors Product specification

Schottky barrier diode 1PS76SB62

GRAPHICAL DATA

10

handbook, halfpage

I

F

MLD553

(mA)

1

(2)
(1)

(3)

0.4 0.8 1.2 1.6

= 125°C.
=85°C.
=25°C.

VF (V)

(1) T
(2) T
(3) T

−1

10

−2

10

amb
amb
amb

Fig.2 Forward current as a function of forward

voltage; typical values.

4

10

handbook, halfpage

I

R

(nA)

3

10

2

10

(1)

(2)

MLD554

10

(3)

1

−2

20

10

(1) T
(2) T
(3) T

amb
amb
amb

= 125 °C.
=85°C.
=25°C.

30

VR (V)

4020100

Fig.3 Reverse current as a function of reverse

voltage; typical values.

0.40

handbook, halfpage

C

d

MLD555

(pF)

0.36

0.32

0.28

0.24

0.20
0

f = 1 MHz; T

10 20 40

=25°C.

amb

30

VR (V)

Fig.4 Diode capacitance as a function of reverse

voltage; typical values.

2001 Feb 16 3