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DISCRETE SEMICONDUCTORS
DATA SH EET
, halfpage
M3D049
1PS76SB62
Schottky barrier diode
Product specification 2001 Feb 16
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Philips Semiconductors Product specification
Schottky barrier diode 1PS76SB62
FEATURES
• Ultra high switching speed
• Very low capacitance
• High breakdown voltage
PINNING
PIN DESCRIPTION
1 cathode
2 anode
• Guard ring protected
• Two pin very small plastic SMD package.
lumns
12
APPLICATIONS
• Ultra high-speed switching
• High frequency applications.
Marking code: S6.
MGU328
DESCRIPTION
Epitaxial Schottky barrier diode encapsulated in a
SOD323 (SC-76) very small plastic SMD package.
Fig.1 Simplified outline (SOD323; SC-76) and
symbol.
ESD sensitive device, observe handling precautions.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER MIN. MAX. UNIT
V
R
I
F
T
stg
T
j
T
amb
continuous reverse voltage − 40 V
continuous forward current − 20 mA
storage temperature −65 +150 °C
junction temperature − 125 °C
operating ambient temperature −65 +125 °C
ELECTRICAL CHARACTERISTICS
T
=25°C unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS MAX. UNIT
V
F
I
R
C
d
forward voltage IF= 2 mA; see Fig.2; note 1 800 mV
reverse current VR= 40 V; see Fig.3; note 1 1 µA
diode capacitance VR= 0 V; f = 1 MHz; see Fig.4 0.6 pF
Note
1. Pulse test: pulse width = 300 µs; δ = 0.02.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient note 1 450 K/W
Note
1. Refer to SOD323 (SC-76) standard mounting conditions.
2001 Feb 16 2
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Philips Semiconductors Product specification
Schottky barrier diode 1PS76SB62
GRAPHICAL DATA
10
handbook, halfpage
I
F
MLD553
(mA)
1
(2)
(1)
(3)
0.4 0.8 1.2 1.6
= 125°C.
=85°C.
=25°C.
VF (V)
(1) T
(2) T
(3) T
−1
10
−2
10
amb
amb
amb
Fig.2 Forward current as a function of forward
voltage; typical values.
4
10
handbook, halfpage
I
R
(nA)
3
10
2
10
(1)
(2)
MLD554
10
(3)
1
−2
20
10
(1) T
(2) T
(3) T
amb
amb
amb
= 125 °C.
=85°C.
=25°C.
30
VR (V)
4020100
Fig.3 Reverse current as a function of reverse
voltage; typical values.
0.40
handbook, halfpage
C
d
MLD555
(pF)
0.36
0.32
0.28
0.24
0.20
0
f = 1 MHz; T
10 20 40
=25°C.
amb
30
VR (V)
Fig.4 Diode capacitance as a function of reverse
voltage; typical values.
2001 Feb 16 3