Philips 1PS75SB45 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
M3D173
1PS75SB45
Schottky barrier double diode
Product specification
Supersedes data of 1997 Nov 07
1999 Apr 26
Philips Semiconductors Product specification
Schottky barrier double diode 1PS75SB45
FEATURES
• Low forward voltage
• Guard ring protected
DESCRIPTION
Planar Schottky barrier double diode encapsulated in a SOT416 (SC75) ultra
small plastic SMD package.
• Ultra small plastic SMD package
• Low diode capacitance.
3
APPLICATIONS
handbook, halfpage
3
12
• Ultra high-speed switching
• Voltage clamping
• Protection circuits
• Blocking diodes.
Marking code: 45.
12
Top view
MAM377
Fig.1 Simplified outline SOT416; (SC75) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per diode
V
I
F
I
FRM
I
FSM
T
T
T
R
stg
j
amb
continuous reverse voltage − 40 V
continuous forward current − 120 mA
repetitive peak forward current tp≤ 1s; δ≤0.5 − 120 mA
non-repetitive peak forward current tp<10ms − 200 mA
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
1999 Apr 26 2
Philips Semiconductors Product specification
Schottky barrier double diode 1PS75SB45
ELECTRICAL CHARACTERISTICS
T
=25°C unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS MAX. UNIT
Per diode
V
F
I
R
τ charge carrier life time I
C
d
Note
1. Pulse test: t
continuous forward voltage see Fig.2
= 1 mA 380 mV
I
F
I
= 10 mA 500 mV
F
=40mA 1 V
I
F
continuous reverse current VR= 30 V; note 1; see Fig.3 1 µA
V
= 40 V; note 1; see Fig.3 10 µA
R
= 5 mA; Krakauer method 100 ps
F
diode capacitance VR= 0 ; f = 1 MHz; see Fig.5 5 pF
= 300 µs; δ = 0.02.
p
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient note 1 833 K/W
Note
1. Refer to SC75 standard mounting conditions.
1999 Apr 26 3
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