DISCRETE SEMICONDUCTORS
DATA SHEET
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M3D102
1PS70SB10; 1PS70SB14; 1PS70SB15; 1PS70SB16
Schottky barrier (double) diodes
Product specification |
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1999 Apr 26 |
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Philips Semiconductors |
Product specification |
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Schottky barrier (double) diodes
1PS70SB10; 1PS70SB14; 1PS70SB15; 1PS70SB16
FEATURES
∙Low forward voltage
∙Guard ring protected
∙Very small plastic SMD package.
APPLICATIONS
∙Ultra high-speed switching
∙Voltage clamping
∙Protection circuits
∙Blocking diodes.
DESCRIPTION
Planar Schottky barrier diodes encapsulated in a SOT323 very small plastic SMD package. Single diodes and double diodes with different pinning are available.
MARKING
TYPE NUMBER |
MARKING |
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CODE (1) |
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1PS70SB10 |
7 0 |
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1PS70SB14 |
7 4 |
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1PS70SB15 |
7 5 |
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1PS70SB16 |
7 6 |
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Note
1.= -: Made in Hong Kong.= t: Made in Malaysia.
PINNING
PIN |
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1PS70SB.. |
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10 |
14 |
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15 |
16 |
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1 |
a1 |
a1 |
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a1 |
k1 |
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2 |
n.c. |
k2 |
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a2 |
k2 |
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3 |
k1 |
k1, a2 |
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k1, k2 |
a1, a2 |
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Top view
MGD765
Fig.1 Simplified outline SOT323 (SC-70) and pin configuration.
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1 |
2 |
n.c.
MLC357
Fig.2 1PS70SB10 single diode configuration (symbol).
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1 
2
MLC358
Fig.3 1PS70SB14 diode configuration (symbol).
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1 
2
MLC359
Fig.4 1PS70SB15 diode configuration (symbol).
3
1 
2
MLC360
Fig.5 1PS70SB16 diode configuration (symbol).
1999 Apr 26 |
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Philips Semiconductors Product specification
Schottky barrier (double) diodes |
1PS70SB10; 1PS70SB14; |
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1PS70SB15; 1PS70SB16 |
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LIMITING VALUES |
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In accordance with the Absolute Maximum Rating System (IEC 134). |
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SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
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Per diode |
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VR |
continuous reverse voltage |
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− |
30 |
V |
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IF |
continuous forward current |
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− |
200 |
mA |
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IFRM |
repetitive peak forward current |
tp ≤ 1 s; δ ≤ 0.5 |
− |
300 |
mA |
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IFSM |
non-repetitive peak forward current |
tp < 10 ms |
− |
600 |
mA |
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Ptot |
total power dissipation (per package) |
Tamb < 25 °C |
− |
200 |
mW |
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Tstg |
storage temperature |
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−65 |
+150 |
°C |
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Tj |
junction temperature |
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125 |
°C |
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Tamb |
operating ambient temperature |
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−65 |
+125 |
°C |
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ELECTRICAL CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL |
PARAMETER |
CONDITIONS |
MAX. |
UNIT |
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Per diode |
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VF |
continuous forward voltage |
see Fig.6 |
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IF = 0.1 mA |
240 |
mV |
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IF = 1 mA |
320 |
mV |
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IF = 10 mA |
400 |
mV |
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IF = 30 mA |
500 |
mV |
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IF = 100 mA |
800 |
mV |
IR |
continuous reverse current |
VR = 25 V; note 1; see Fig.7 |
2 |
μA |
Cd |
diode capacitance |
VR = 1 V; f = 1 MHz; see Fig.8 |
10 |
pF |
Note
1. Pulse test: tp = 300 μs; δ = 0.02.
THERMAL CHARACTERISTICS
SYMBOL |
PARAMETER |
CONDITIONS |
VALUE |
UNIT |
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Rth j-a |
thermal resistance from junction to ambient |
note 1 |
625 |
K/W |
Note |
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1. Refer to SOT323 (SC70) standard mounting conditions.
1999 Apr 26 |
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